CN104328484B - 一种区熔气掺单晶的掺杂气路 - Google Patents
一种区熔气掺单晶的掺杂气路 Download PDFInfo
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- CN104328484B CN104328484B CN201410654187.7A CN201410654187A CN104328484B CN 104328484 B CN104328484 B CN 104328484B CN 201410654187 A CN201410654187 A CN 201410654187A CN 104328484 B CN104328484 B CN 104328484B
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CN104328484B true CN104328484B (zh) | 2017-02-22 |
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CN104313697A (zh) * | 2014-11-17 | 2015-01-28 | 天津市环欧半导体材料技术有限公司 | 一种改进的区熔气掺单晶的掺杂气路 |
CN108411357A (zh) * | 2018-04-13 | 2018-08-17 | 天津市环欧半导体材料技术有限公司 | 一种提高区熔气相掺杂稳定性的掺杂装置及方法 |
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CN1333114C (zh) * | 2006-04-21 | 2007-08-22 | 天津市环欧半导体材料技术有限公司 | 气相掺杂区熔硅单晶的生产方法 |
CN101937822B (zh) * | 2009-06-30 | 2012-03-07 | 同方威视技术股份有限公司 | 掺杂气发生装置 |
CN101831630B (zh) * | 2010-04-02 | 2013-01-09 | 中国科学院半导体研究所 | 采用金属源化学气相沉积技术制备掺杂氧化锌的方法 |
CN103866377A (zh) * | 2012-12-14 | 2014-06-18 | 有研半导体材料股份有限公司 | 一种获得宽范围电阻率区熔硅单晶的气掺系统装置及方法 |
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Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |