DK3414367T3 - Fosfordoteret siliciumenkeltkrystal - Google Patents
Fosfordoteret siliciumenkeltkrystal Download PDFInfo
- Publication number
- DK3414367T3 DK3414367T3 DK17703166.3T DK17703166T DK3414367T3 DK 3414367 T3 DK3414367 T3 DK 3414367T3 DK 17703166 T DK17703166 T DK 17703166T DK 3414367 T3 DK3414367 T3 DK 3414367T3
- Authority
- DK
- Denmark
- Prior art keywords
- phosphoroused
- single crystal
- silicone single
- silicone
- crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/20—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices for inducing a nuclear reaction transmuting chemical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16154695 | 2016-02-08 | ||
| PCT/EP2017/052754 WO2017137438A1 (en) | 2016-02-08 | 2017-02-08 | A phosphorus doped silicon single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK3414367T3 true DK3414367T3 (da) | 2020-05-25 |
Family
ID=55411172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK17703166.3T DK3414367T3 (da) | 2016-02-08 | 2017-02-08 | Fosfordoteret siliciumenkeltkrystal |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3414367B1 (https=) |
| JP (1) | JP6808757B2 (https=) |
| CN (1) | CN108699724B (https=) |
| DK (1) | DK3414367T3 (https=) |
| WO (1) | WO2017137438A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10468148B2 (en) | 2017-04-24 | 2019-11-05 | Infineon Technologies Ag | Apparatus and method for neutron transmutation doping of semiconductor wafers |
| JP7010179B2 (ja) * | 2018-09-03 | 2022-01-26 | 株式会社Sumco | 単結晶の製造方法及び装置及びシリコン単結晶インゴット |
| US11739437B2 (en) * | 2018-12-27 | 2023-08-29 | Globalwafers Co., Ltd. | Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth |
| CN111341838B (zh) * | 2020-03-09 | 2021-05-07 | 华东师范大学 | 硅同位素Si-30在抗中高能中子辐射半导体材料或半导体器件的应用 |
| CA3175051A1 (en) * | 2020-03-12 | 2021-09-16 | Umicore | Heavily doped n-type germanium |
| JP7342845B2 (ja) * | 2020-11-25 | 2023-09-12 | 株式会社Sumco | シリコン単結晶の製造方法 |
| CN114990693A (zh) * | 2022-04-02 | 2022-09-02 | 天津中环领先材料技术有限公司 | 一种ntd单晶硅退火工艺 |
| EP4350055A1 (de) * | 2022-10-06 | 2024-04-10 | Siltronic AG | Verfahren zur herstellung eines einkristalls aus silizium und halbleiterscheibe aus einkristallinem silizium |
| CN118422319A (zh) * | 2024-05-27 | 2024-08-02 | 宁夏中欣晶圆半导体科技有限公司 | 高电阻率单晶材料的制备方法 |
| CN121675078A (zh) * | 2024-08-23 | 2026-03-17 | 隆基绿能科技股份有限公司 | 一种光伏单晶硅片和包含其的太阳能电池 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5904767A (en) * | 1996-08-29 | 1999-05-18 | Industrial Technology Research Institute | Neutron transmutation doping of silicon single crystals |
| DE19738732A1 (de) * | 1997-09-04 | 1999-03-18 | Wacker Siltronic Halbleitermat | Neutronendotierte Siliciumscheiben |
| DE10137856B4 (de) | 2001-08-02 | 2007-12-13 | Siltronic Ag | Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium |
| JP2005012090A (ja) * | 2003-06-20 | 2005-01-13 | Toshiba Corp | 半導体ウェーハの製造方法及び半導体装置の製造方法 |
| JP2005035816A (ja) | 2003-07-17 | 2005-02-10 | Shin Etsu Handotai Co Ltd | シリコン単結晶製造方法及びシリコン単結晶 |
| CN1325701C (zh) * | 2006-04-26 | 2007-07-11 | 天津市环欧半导体材料技术有限公司 | 气相预掺杂和中子辐照掺杂组合的区熔硅单晶的生产方法 |
| CN101680108A (zh) | 2007-04-13 | 2010-03-24 | Topsil半导体材料股份公司 | 生产单晶的方法和设备 |
| JP2008308383A (ja) * | 2007-06-18 | 2008-12-25 | Covalent Materials Corp | シリコン単結晶の製造方法 |
| JP5283543B2 (ja) * | 2009-03-09 | 2013-09-04 | 株式会社Ｓｕｍｃｏ | シリコン単結晶の育成方法 |
| JP5201077B2 (ja) * | 2009-05-15 | 2013-06-05 | 株式会社Ｓｕｍｃｏ | シリコンウェーハの製造方法 |
| JP5194146B2 (ja) * | 2010-12-28 | 2013-05-08 | ジルトロニック アクチエンゲゼルシャフト | シリコン単結晶の製造方法、シリコン単結晶、およびウエハ |
| CN102534752A (zh) * | 2012-03-08 | 2012-07-04 | 天津市环欧半导体材料技术有限公司 | 一种制造区熔硅单晶的直拉区熔气掺法 |
| JP5880353B2 (ja) | 2012-08-28 | 2016-03-09 | 信越半導体株式会社 | シリコン単結晶の育成方法 |
| JP5921498B2 (ja) | 2013-07-12 | 2016-05-24 | グローバルウェーハズ・ジャパン株式会社 | シリコン単結晶の製造方法 |
-
2017
- 2017-02-08 WO PCT/EP2017/052754 patent/WO2017137438A1/en not_active Ceased
- 2017-02-08 EP EP17703166.3A patent/EP3414367B1/en active Active
- 2017-02-08 JP JP2018560252A patent/JP6808757B2/ja active Active
- 2017-02-08 DK DK17703166.3T patent/DK3414367T3/da active
- 2017-02-08 CN CN201780010459.1A patent/CN108699724B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019504817A (ja) | 2019-02-21 |
| EP3414367B1 (en) | 2020-02-26 |
| WO2017137438A1 (en) | 2017-08-17 |
| CN108699724A (zh) | 2018-10-23 |
| CN108699724B (zh) | 2021-05-04 |
| JP6808757B2 (ja) | 2021-01-06 |
| EP3414367A1 (en) | 2018-12-19 |
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