JP6784609B2 - 光電変換装置、撮像システム及び移動体 - Google Patents

光電変換装置、撮像システム及び移動体 Download PDF

Info

Publication number
JP6784609B2
JP6784609B2 JP2017033712A JP2017033712A JP6784609B2 JP 6784609 B2 JP6784609 B2 JP 6784609B2 JP 2017033712 A JP2017033712 A JP 2017033712A JP 2017033712 A JP2017033712 A JP 2017033712A JP 6784609 B2 JP6784609 B2 JP 6784609B2
Authority
JP
Japan
Prior art keywords
pixel
photoelectric conversion
electrode
conversion layer
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017033712A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018139375A5 (enExample
JP2018139375A (ja
Inventor
知弥 笹子
知弥 笹子
和昭 田代
和昭 田代
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017033712A priority Critical patent/JP6784609B2/ja
Priority to US15/892,889 priority patent/US10419695B2/en
Publication of JP2018139375A publication Critical patent/JP2018139375A/ja
Publication of JP2018139375A5 publication Critical patent/JP2018139375A5/ja
Application granted granted Critical
Publication of JP6784609B2 publication Critical patent/JP6784609B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/50—Depth or shape recovery
    • G06T7/55—Depth or shape recovery from multiple images
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/133—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing panchromatic light, e.g. filters passing white light
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP2017033712A 2017-02-24 2017-02-24 光電変換装置、撮像システム及び移動体 Active JP6784609B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017033712A JP6784609B2 (ja) 2017-02-24 2017-02-24 光電変換装置、撮像システム及び移動体
US15/892,889 US10419695B2 (en) 2017-02-24 2018-02-09 Photoelectric conversion device, imaging system, and mobile apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017033712A JP6784609B2 (ja) 2017-02-24 2017-02-24 光電変換装置、撮像システム及び移動体

Publications (3)

Publication Number Publication Date
JP2018139375A JP2018139375A (ja) 2018-09-06
JP2018139375A5 JP2018139375A5 (enExample) 2020-03-12
JP6784609B2 true JP6784609B2 (ja) 2020-11-11

Family

ID=63247115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017033712A Active JP6784609B2 (ja) 2017-02-24 2017-02-24 光電変換装置、撮像システム及び移動体

Country Status (2)

Country Link
US (1) US10419695B2 (enExample)
JP (1) JP6784609B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7000020B2 (ja) * 2016-11-30 2022-01-19 キヤノン株式会社 光電変換装置、撮像システム
WO2019009023A1 (ja) * 2017-07-05 2019-01-10 パナソニックＩｐマネジメント株式会社 撮像装置
CN110945865B (zh) * 2017-12-28 2023-06-13 松下知识产权经营株式会社 摄像装置
US11140349B2 (en) 2018-09-07 2021-10-05 Samsung Electronics Co., Ltd. Image sensor incuding CMOS image sensor pixel and dynamic vision sensor pixel
WO2020067503A1 (ja) * 2018-09-28 2020-04-02 株式会社ニコン 撮像素子および撮像装置
CN110536082B (zh) * 2019-08-30 2021-11-02 上海中航光电子有限公司 主动式像素传感电路及传感器、显示面板及装置
JP2021057885A (ja) 2019-09-26 2021-04-08 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
WO2021246311A1 (ja) * 2020-06-05 2021-12-09 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
JP7527871B2 (ja) 2020-07-10 2024-08-05 キヤノン株式会社 光電変換装置及びその駆動方法
EP4209001B1 (en) 2020-09-04 2025-06-25 QUALCOMM Incorporated Sensitivity-biased pixels
WO2022102342A1 (ja) * 2020-11-13 2022-05-19 パナソニックＩｐマネジメント株式会社 撮像装置
JP2023083030A (ja) * 2021-12-03 2023-06-15 キヤノン株式会社 撮像装置
CN114664906B (zh) * 2022-03-17 2024-08-30 上海天马微电子有限公司 一种光感模组、显示面板及显示装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159422A (en) 1987-06-17 1992-10-27 Canon Kabushiki Kaisha Photoelectric conversion device
US6069393A (en) 1987-06-26 2000-05-30 Canon Kabushiki Kaisha Photoelectric converter
US5366921A (en) 1987-11-13 1994-11-22 Canon Kabushiki Kaisha Process for fabricating an electronic circuit apparatus
US6717151B2 (en) 2000-07-10 2004-04-06 Canon Kabushiki Kaisha Image pickup apparatus
US6800836B2 (en) 2000-07-10 2004-10-05 Canon Kabushiki Kaisha Image pickup device, radiation image pickup device and image processing system
JP2009296276A (ja) * 2008-06-04 2009-12-17 Sony Corp 撮像装置およびカメラ
JP5404112B2 (ja) 2009-03-12 2014-01-29 キヤノン株式会社 固体撮像素子、その駆動方法及び撮像システム
JP5521682B2 (ja) * 2010-02-26 2014-06-18 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器
JPWO2013001809A1 (ja) * 2011-06-30 2015-02-23 パナソニック株式会社 固体撮像装置
JP6141024B2 (ja) 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
JP6368115B2 (ja) 2013-05-10 2018-08-01 キヤノン株式会社 固体撮像装置およびカメラ
JP6362257B2 (ja) * 2013-06-13 2018-07-25 日本放送協会 光電変換素子、光電変換素子の製造方法、積層型固体撮像素子および太陽電池
JP6207351B2 (ja) 2013-11-12 2017-10-04 キヤノン株式会社 固体撮像装置および撮像システム
JP2016021445A (ja) * 2014-07-11 2016-02-04 キヤノン株式会社 光電変換装置、および、撮像システム
JP6425448B2 (ja) * 2014-07-31 2018-11-21 キヤノン株式会社 光電変換装置、および、撮像システム
JP6555512B2 (ja) * 2014-10-23 2019-08-07 パナソニックＩｐマネジメント株式会社 撮像装置および画像取得装置
US10141354B2 (en) 2014-10-23 2018-11-27 Panasonic Intellectual Property Management Co., Ltd. Imaging device and image acquisition device
JP6720510B2 (ja) * 2015-01-09 2020-07-08 株式会社リコー 移動体システム
JP6579774B2 (ja) 2015-03-30 2019-09-25 キヤノン株式会社 固体撮像装置およびカメラ
JP6494368B2 (ja) 2015-03-30 2019-04-03 キヤノン株式会社 固体撮像装置およびカメラ
JP2017098809A (ja) 2015-11-26 2017-06-01 キヤノン株式会社 光電変換装置、および、撮像システム
JP6785429B2 (ja) * 2015-12-03 2020-11-18 パナソニックＩｐマネジメント株式会社 撮像装置
JP6702711B2 (ja) 2015-12-17 2020-06-03 キヤノン株式会社 光電変換装置、および、撮像システム

Also Published As

Publication number Publication date
US20180249104A1 (en) 2018-08-30
US10419695B2 (en) 2019-09-17
JP2018139375A (ja) 2018-09-06

Similar Documents

Publication Publication Date Title
JP6784609B2 (ja) 光電変換装置、撮像システム及び移動体
US11736813B2 (en) Imaging device and equipment
US11800253B2 (en) Imaging device and imaging system
US11405570B2 (en) Imaging device, imaging system, and semiconductor chip
US10944931B2 (en) Solid state imaging device and imaging system
JP7193907B2 (ja) 固体撮像装置
CN110931517B (zh) 光检测装置
US11140348B2 (en) AD conversion device, imaging device, imaging system, and mobile apparatus
JP7471812B2 (ja) 半導体装置および機器
JP7395300B2 (ja) 光電変換装置、光電変換システム、および移動体
JP7504625B2 (ja) 光電変換装置
JP2017184185A (ja) 撮像装置、撮像システム、および、移動体
KR102876706B1 (ko) 광전 변환 장치, 광전 변환 시스템 및 이동체
US20180350864A1 (en) Solid state imaging device, imaging system, and mobile apparatus
US20240098381A1 (en) Imaging device, imaging system, moving body, and instrument
US10728471B2 (en) Photoelectric conversion device with a voltage control unit connected to a reset transistor and a capacitive element, and associated imaging system
JP2018093263A (ja) 光電変換装置、光電変換装置の駆動方法、および、撮像システム
US20230282672A1 (en) Photoelectric conversion device
JP7297546B2 (ja) 光電変換装置、撮像システム、移動体、および積層用の半導体基板
US20220285410A1 (en) Semiconductor apparatus and device
US20250221065A1 (en) Photoelectric conversion device
US20250113640A1 (en) Device, apparatus, and moving body
JP2021086919A (ja) 光電変換装置、撮像システム、および移動体
US11450701B2 (en) Photoelectric conversion apparatus, photoelectric conversion system, and movable body
JP2020191600A (ja) 光電変換装置および光電変換システム

Legal Events

Date Code Title Description
RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20171214

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200131

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200826

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200924

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201023

R151 Written notification of patent or utility model registration

Ref document number: 6784609

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151