JP6767225B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6767225B2
JP6767225B2 JP2016191234A JP2016191234A JP6767225B2 JP 6767225 B2 JP6767225 B2 JP 6767225B2 JP 2016191234 A JP2016191234 A JP 2016191234A JP 2016191234 A JP2016191234 A JP 2016191234A JP 6767225 B2 JP6767225 B2 JP 6767225B2
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JP
Japan
Prior art keywords
voltage
switch
node
substrate
circuit
Prior art date
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Application number
JP2016191234A
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English (en)
Japanese (ja)
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JP2018055747A (ja
JP2018055747A5 (https=
Inventor
昭 田邊
昭 田邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2016191234A priority Critical patent/JP6767225B2/ja
Priority to US15/663,728 priority patent/US10340905B2/en
Priority to CN201710824613.0A priority patent/CN107888179B/zh
Priority to TW106131886A priority patent/TWI728184B/zh
Priority to KR1020170124879A priority patent/KR20180035696A/ko
Publication of JP2018055747A publication Critical patent/JP2018055747A/ja
Publication of JP2018055747A5 publication Critical patent/JP2018055747A5/ja
Priority to US16/414,846 priority patent/US10447257B2/en
Priority to JP2020156271A priority patent/JP6946531B2/ja
Application granted granted Critical
Publication of JP6767225B2 publication Critical patent/JP6767225B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP2016191234A 2016-09-29 2016-09-29 半導体装置 Active JP6767225B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2016191234A JP6767225B2 (ja) 2016-09-29 2016-09-29 半導体装置
US15/663,728 US10340905B2 (en) 2016-09-29 2017-07-29 Semiconductor device
CN201710824613.0A CN107888179B (zh) 2016-09-29 2017-09-14 半导体装置
TW106131886A TWI728184B (zh) 2016-09-29 2017-09-18 半導體裝置
KR1020170124879A KR20180035696A (ko) 2016-09-29 2017-09-27 반도체 장치
US16/414,846 US10447257B2 (en) 2016-09-29 2019-05-17 Semiconductor device
JP2020156271A JP6946531B2 (ja) 2016-09-29 2020-09-17 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016191234A JP6767225B2 (ja) 2016-09-29 2016-09-29 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020156271A Division JP6946531B2 (ja) 2016-09-29 2020-09-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2018055747A JP2018055747A (ja) 2018-04-05
JP2018055747A5 JP2018055747A5 (https=) 2019-04-25
JP6767225B2 true JP6767225B2 (ja) 2020-10-14

Family

ID=61687317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016191234A Active JP6767225B2 (ja) 2016-09-29 2016-09-29 半導体装置

Country Status (5)

Country Link
US (2) US10340905B2 (https=)
JP (1) JP6767225B2 (https=)
KR (1) KR20180035696A (https=)
CN (1) CN107888179B (https=)
TW (1) TWI728184B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016092536A (ja) * 2014-10-31 2016-05-23 ルネサスエレクトロニクス株式会社 半導体装置
US10921839B2 (en) 2017-08-30 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Switchable power supply
JP7195133B2 (ja) * 2018-12-19 2022-12-23 ルネサスエレクトロニクス株式会社 半導体装置
CN112130614B (zh) * 2019-06-24 2021-11-02 华邦电子股份有限公司 反向偏压调整器
JP7256102B2 (ja) * 2019-10-21 2023-04-11 ルネサスエレクトロニクス株式会社 電子システム装置、及び電子システム装置の起動方法
CN112825263B (zh) * 2019-11-20 2024-08-13 合肥格易集成电路有限公司 Nand Flash的电压控制方法及非易失性存储器
CN116487380A (zh) 2022-03-11 2023-07-25 台湾积体电路制造股份有限公司 具有不同电压域的公共深n阱的半导体器件及其形成方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
KR0172555B1 (ko) * 1995-12-29 1999-03-30 김주용 고속 감지 증폭기
JP3732914B2 (ja) * 1997-02-28 2006-01-11 株式会社ルネサステクノロジ 半導体装置
JP4253052B2 (ja) * 1997-04-08 2009-04-08 株式会社東芝 半導体装置
US6411156B1 (en) * 1997-06-20 2002-06-25 Intel Corporation Employing transistor body bias in controlling chip parameters
JPH11214526A (ja) * 1998-01-21 1999-08-06 Mitsubishi Electric Corp 半導体回路装置
JP2002093195A (ja) 2000-09-18 2002-03-29 Mitsubishi Electric Corp 半導体記憶装置および半導体記憶装置のテスト方法
US6807109B2 (en) * 2001-12-05 2004-10-19 Renesas Technology Corp. Semiconductor device suitable for system in package
JP2004031411A (ja) * 2002-06-21 2004-01-29 Renesas Technology Corp 半導体装置
JP4473669B2 (ja) * 2004-07-28 2010-06-02 株式会社リコー 定電圧回路、その定電圧回路を使用した定電流源、増幅器及び電源回路
EP1662660A3 (en) * 2004-11-29 2007-12-12 STMicroelectronics Pvt. Ltd Method and apparatus for providing compensation against temperature, process and supply voltage variation
JP5008367B2 (ja) * 2005-09-29 2012-08-22 エスケーハイニックス株式会社 電圧発生装置
JP2007201236A (ja) * 2006-01-27 2007-08-09 Renesas Technology Corp 半導体集積回路
US7911855B2 (en) * 2006-02-24 2011-03-22 Renesas Technology Corp. Semiconductor device with voltage interconnections
US7355437B2 (en) * 2006-03-06 2008-04-08 Altera Corporation Latch-up prevention circuitry for integrated circuits with transistor body biasing
JP2008148008A (ja) * 2006-12-11 2008-06-26 Renesas Technology Corp 基板制御回路、半導体集積回路及び基板制御方法
JP2008153415A (ja) * 2006-12-18 2008-07-03 Renesas Technology Corp 半導体集積回路およびその製造方法
US7978001B2 (en) * 2008-09-25 2011-07-12 Via Technologies, Inc. Microprocessor with selective substrate biasing for clock-gated functional blocks
JP2010104195A (ja) * 2008-10-27 2010-05-06 Seiko Epson Corp 電気負荷駆動回路
US7800179B2 (en) * 2009-02-04 2010-09-21 Fairchild Semiconductor Corporation High speed, low power consumption, isolated analog CMOS unit
JP5488361B2 (ja) * 2010-09-15 2014-05-14 富士通株式会社 半導体集積回路
US8373497B2 (en) * 2011-01-11 2013-02-12 Infineon Technologies Ag System and method for preventing bipolar parasitic activation in a semiconductor circuit
JP2012234593A (ja) * 2011-04-28 2012-11-29 Renesas Electronics Corp 半導体装置
US8743647B2 (en) * 2012-02-21 2014-06-03 Synopsys, Inc. Static read only memory device which consumes low stand-by leakage current
KR101926604B1 (ko) * 2012-02-27 2018-12-07 삼성전자 주식회사 스탠바이 모드 바디 바이어스 제어 방법 및 이를 이용한 반도체 장치
US9472948B2 (en) * 2013-09-30 2016-10-18 Infineon Technologies Ag On chip reverse polarity protection compliant with ISO and ESD requirements

Also Published As

Publication number Publication date
US20180091130A1 (en) 2018-03-29
US20190273486A1 (en) 2019-09-05
US10447257B2 (en) 2019-10-15
JP2018055747A (ja) 2018-04-05
TW201824749A (zh) 2018-07-01
US10340905B2 (en) 2019-07-02
KR20180035696A (ko) 2018-04-06
TWI728184B (zh) 2021-05-21
CN107888179B (zh) 2023-07-25
CN107888179A (zh) 2018-04-06

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