JP6754157B2 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP6754157B2
JP6754157B2 JP2015209533A JP2015209533A JP6754157B2 JP 6754157 B2 JP6754157 B2 JP 6754157B2 JP 2015209533 A JP2015209533 A JP 2015209533A JP 2015209533 A JP2015209533 A JP 2015209533A JP 6754157 B2 JP6754157 B2 JP 6754157B2
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Japan
Prior art keywords
unit
light
photoelectric conversion
pixel
film
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JP2015209533A
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English (en)
Japanese (ja)
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JP2017084892A5 (enExample
JP2017084892A (ja
Inventor
剛志 柳田
剛志 柳田
名取　太知
太知 名取
高橋　裕嗣
裕嗣 高橋
丸山　俊介
俊介 丸山
丸山　康
康 丸山
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to JP2015209533A priority Critical patent/JP6754157B2/ja
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to CN202211225689.9A priority patent/CN115472639B/xx
Priority to EP16790735.1A priority patent/EP3369113B1/en
Priority to KR1020187010717A priority patent/KR102673399B1/ko
Priority to CN201680060810.3A priority patent/CN108140661B/zh
Priority to PCT/JP2016/080220 priority patent/WO2017073322A1/en
Priority to US15/768,378 priority patent/US10741599B2/en
Publication of JP2017084892A publication Critical patent/JP2017084892A/ja
Publication of JP2017084892A5 publication Critical patent/JP2017084892A5/ja
Priority to US16/924,010 priority patent/US11271026B2/en
Application granted granted Critical
Publication of JP6754157B2 publication Critical patent/JP6754157B2/ja
Priority to US17/574,033 priority patent/US20220216249A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2015209533A 2015-10-26 2015-10-26 撮像装置 Active JP6754157B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2015209533A JP6754157B2 (ja) 2015-10-26 2015-10-26 撮像装置
US15/768,378 US10741599B2 (en) 2015-10-26 2016-10-12 Image pick-up apparatus
EP16790735.1A EP3369113B1 (en) 2015-10-26 2016-10-12 Image pick-up apparatus
KR1020187010717A KR102673399B1 (ko) 2015-10-26 2016-10-12 촬상 장치
CN201680060810.3A CN108140661B (zh) 2015-10-26 2016-10-12 成像器件和电子装置
PCT/JP2016/080220 WO2017073322A1 (en) 2015-10-26 2016-10-12 Image pick-up apparatus
CN202211225689.9A CN115472639B (en) 2015-10-26 2016-10-12 Photodetector and electronic device
US16/924,010 US11271026B2 (en) 2015-10-26 2020-07-08 Image pick-up apparatus
US17/574,033 US20220216249A1 (en) 2015-10-26 2022-01-12 Image pick-up apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015209533A JP6754157B2 (ja) 2015-10-26 2015-10-26 撮像装置

Related Child Applications (1)

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JP2020091641A Division JP2020141146A (ja) 2020-05-26 2020-05-26 撮像装置

Publications (3)

Publication Number Publication Date
JP2017084892A JP2017084892A (ja) 2017-05-18
JP2017084892A5 JP2017084892A5 (enExample) 2018-10-18
JP6754157B2 true JP6754157B2 (ja) 2020-09-09

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US (3) US10741599B2 (enExample)
EP (1) EP3369113B1 (enExample)
JP (1) JP6754157B2 (enExample)
KR (1) KR102673399B1 (enExample)
CN (1) CN108140661B (enExample)
WO (1) WO2017073322A1 (enExample)

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US11553151B2 (en) 2018-09-28 2023-01-10 Sony Semiconductor Solutions Corporation Solid-state imaging device, method of controlling solid-state imaging device, and electronic device

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CN108140661A (zh) 2018-06-08
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US11271026B2 (en) 2022-03-08
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US20200335537A1 (en) 2020-10-22
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