JP6735078B2 - 半導体基体及び半導体装置 - Google Patents

半導体基体及び半導体装置 Download PDF

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Publication number
JP6735078B2
JP6735078B2 JP2015194840A JP2015194840A JP6735078B2 JP 6735078 B2 JP6735078 B2 JP 6735078B2 JP 2015194840 A JP2015194840 A JP 2015194840A JP 2015194840 A JP2015194840 A JP 2015194840A JP 6735078 B2 JP6735078 B2 JP 6735078B2
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Japan
Prior art keywords
layer
buffer layer
region
substrate
concentration
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JP2015194840A
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English (en)
Japanese (ja)
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JP2017069450A (ja
JP2017069450A5 (enExample
Inventor
洋志 鹿内
洋志 鹿内
憲 佐藤
憲 佐藤
篠宮　勝
勝 篠宮
慶太郎 土屋
慶太郎 土屋
和徳 萩本
和徳 萩本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
Original Assignee
Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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Priority to JP2015194840A priority Critical patent/JP6735078B2/ja
Application filed by Sanken Electric Co Ltd, Shin Etsu Handotai Co Ltd filed Critical Sanken Electric Co Ltd
Priority to CN201680058423.6A priority patent/CN108140582B/zh
Priority to US15/760,579 priority patent/US10529842B2/en
Priority to PCT/JP2016/003915 priority patent/WO2017056389A1/ja
Priority to KR1020187008630A priority patent/KR102658784B1/ko
Priority to TW105128212A priority patent/TWI705506B/zh
Publication of JP2017069450A publication Critical patent/JP2017069450A/ja
Publication of JP2017069450A5 publication Critical patent/JP2017069450A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2015194840A 2015-09-30 2015-09-30 半導体基体及び半導体装置 Active JP6735078B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015194840A JP6735078B2 (ja) 2015-09-30 2015-09-30 半導体基体及び半導体装置
US15/760,579 US10529842B2 (en) 2015-09-30 2016-08-29 Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor device
PCT/JP2016/003915 WO2017056389A1 (ja) 2015-09-30 2016-08-29 半導体基体、半導体装置、半導体基体の製造方法、並びに、半導体装置の製造方法
KR1020187008630A KR102658784B1 (ko) 2015-09-30 2016-08-29 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법
CN201680058423.6A CN108140582B (zh) 2015-09-30 2016-08-29 半导体衬底、半导体装置、半导体衬底的制造方法、以及半导体装置的制造方法
TW105128212A TWI705506B (zh) 2015-09-30 2016-09-01 半導體基底、半導體裝置、半導體基底的製造方法、以及半導體裝置的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015194840A JP6735078B2 (ja) 2015-09-30 2015-09-30 半導体基体及び半導体装置

Publications (3)

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JP2017069450A JP2017069450A (ja) 2017-04-06
JP2017069450A5 JP2017069450A5 (enExample) 2018-04-19
JP6735078B2 true JP6735078B2 (ja) 2020-08-05

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JP2015194840A Active JP6735078B2 (ja) 2015-09-30 2015-09-30 半導体基体及び半導体装置

Country Status (6)

Country Link
US (1) US10529842B2 (enExample)
JP (1) JP6735078B2 (enExample)
KR (1) KR102658784B1 (enExample)
CN (1) CN108140582B (enExample)
TW (1) TWI705506B (enExample)
WO (1) WO2017056389A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613535B (zh) * 2019-02-26 2023-10-13 苏州晶湛半导体有限公司 一种半导体结构及其制备方法
US12176430B2 (en) * 2020-07-24 2024-12-24 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
JP7720768B2 (ja) 2021-10-28 2025-08-08 株式会社東芝 窒化物半導体、半導体装置、及び、窒化物半導体の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3767660B2 (ja) * 1998-03-17 2006-04-19 昭和電工株式会社 積層構造体及びそれを用いた化合物半導体デバイス
JP3642157B2 (ja) * 1997-05-26 2005-04-27 ソニー株式会社 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JP2010123725A (ja) * 2008-11-19 2010-06-03 Sanken Electric Co Ltd 化合物半導体基板及び該化合物半導体基板を用いた半導体装置
JP5634681B2 (ja) * 2009-03-26 2014-12-03 住友電工デバイス・イノベーション株式会社 半導体素子
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
JP5751074B2 (ja) * 2011-08-01 2015-07-22 富士通株式会社 半導体装置及び半導体装置の製造方法
CN102290434B (zh) * 2011-09-01 2013-08-14 西安电子科技大学 带栅下缓冲层结构的金属半导体场效应晶体管及制作方法
JP5987288B2 (ja) * 2011-09-28 2016-09-07 富士通株式会社 半導体装置
JP6119165B2 (ja) * 2012-09-28 2017-04-26 富士通株式会社 半導体装置
JP6013948B2 (ja) * 2013-03-13 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置
JP5756830B2 (ja) * 2013-05-31 2015-07-29 サンケン電気株式会社 半導体基板、半導体装置、及び、半導体装置の製造方法
JP2015070064A (ja) * 2013-09-27 2015-04-13 富士通株式会社 半導体装置及び半導体装置の製造方法
CN104465912A (zh) * 2014-08-22 2015-03-25 江苏鑫博电子科技有限公司 一种高光能密度输出的 led 外延结构及外延方法

Also Published As

Publication number Publication date
JP2017069450A (ja) 2017-04-06
TWI705506B (zh) 2020-09-21
CN108140582A (zh) 2018-06-08
US10529842B2 (en) 2020-01-07
US20180269316A1 (en) 2018-09-20
KR20180058725A (ko) 2018-06-01
TW201721767A (zh) 2017-06-16
CN108140582B (zh) 2021-06-04
WO2017056389A1 (ja) 2017-04-06
KR102658784B1 (ko) 2024-04-17

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