TWI705506B - 半導體基底、半導體裝置、半導體基底的製造方法、以及半導體裝置的製造方法 - Google Patents

半導體基底、半導體裝置、半導體基底的製造方法、以及半導體裝置的製造方法 Download PDF

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TWI705506B
TWI705506B TW105128212A TW105128212A TWI705506B TW I705506 B TWI705506 B TW I705506B TW 105128212 A TW105128212 A TW 105128212A TW 105128212 A TW105128212 A TW 105128212A TW I705506 B TWI705506 B TW I705506B
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buffer layer
boron
layer
concentration
substrate
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TW105128212A
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TW201721767A (zh
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鹿內洋志
佐藤憲
篠宮勝
土屋慶太郎
萩本和德
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日商三墾電氣股份有限公司
日商信越半導體股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW105128212A 2015-09-30 2016-09-01 半導體基底、半導體裝置、半導體基底的製造方法、以及半導體裝置的製造方法 TWI705506B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015194840A JP6735078B2 (ja) 2015-09-30 2015-09-30 半導体基体及び半導体装置
JP2015-194840 2015-09-30

Publications (2)

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TW201721767A TW201721767A (zh) 2017-06-16
TWI705506B true TWI705506B (zh) 2020-09-21

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US (1) US10529842B2 (enExample)
JP (1) JP6735078B2 (enExample)
KR (1) KR102658784B1 (enExample)
CN (1) CN108140582B (enExample)
TW (1) TWI705506B (enExample)
WO (1) WO2017056389A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613535B (zh) * 2019-02-26 2023-10-13 苏州晶湛半导体有限公司 一种半导体结构及其制备方法
US12176430B2 (en) * 2020-07-24 2024-12-24 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
JP7720768B2 (ja) 2021-10-28 2025-08-08 株式会社東芝 窒化物半導体、半導体装置、及び、窒化物半導体の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201314889A (zh) * 2011-09-28 2013-04-01 富士通股份有限公司 半導體裝置
TW201324772A (zh) * 2011-08-01 2013-06-16 富士通股份有限公司 半導體裝置及半導體裝置之製造方法
US20140091313A1 (en) * 2012-09-28 2014-04-03 Fujitsu Limited Semiconductor apparatus
TW201513174A (zh) * 2013-05-31 2015-04-01 三墾電氣股份有限公司 半導體基板、半導體裝置及半導體裝置的製造方法
TW201513362A (zh) * 2013-09-27 2015-04-01 富士通股份有限公司 半導體裝置及其製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3767660B2 (ja) * 1998-03-17 2006-04-19 昭和電工株式会社 積層構造体及びそれを用いた化合物半導体デバイス
JP3642157B2 (ja) * 1997-05-26 2005-04-27 ソニー株式会社 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JP2010123725A (ja) * 2008-11-19 2010-06-03 Sanken Electric Co Ltd 化合物半導体基板及び該化合物半導体基板を用いた半導体装置
JP5634681B2 (ja) * 2009-03-26 2014-12-03 住友電工デバイス・イノベーション株式会社 半導体素子
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
CN102290434B (zh) * 2011-09-01 2013-08-14 西安电子科技大学 带栅下缓冲层结构的金属半导体场效应晶体管及制作方法
JP6013948B2 (ja) * 2013-03-13 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置
CN104465912A (zh) * 2014-08-22 2015-03-25 江苏鑫博电子科技有限公司 一种高光能密度输出的 led 外延结构及外延方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201324772A (zh) * 2011-08-01 2013-06-16 富士通股份有限公司 半導體裝置及半導體裝置之製造方法
TW201314889A (zh) * 2011-09-28 2013-04-01 富士通股份有限公司 半導體裝置
US20140091313A1 (en) * 2012-09-28 2014-04-03 Fujitsu Limited Semiconductor apparatus
TW201513174A (zh) * 2013-05-31 2015-04-01 三墾電氣股份有限公司 半導體基板、半導體裝置及半導體裝置的製造方法
TW201513362A (zh) * 2013-09-27 2015-04-01 富士通股份有限公司 半導體裝置及其製造方法

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Publication number Publication date
JP2017069450A (ja) 2017-04-06
CN108140582A (zh) 2018-06-08
US10529842B2 (en) 2020-01-07
US20180269316A1 (en) 2018-09-20
KR20180058725A (ko) 2018-06-01
TW201721767A (zh) 2017-06-16
CN108140582B (zh) 2021-06-04
JP6735078B2 (ja) 2020-08-05
WO2017056389A1 (ja) 2017-04-06
KR102658784B1 (ko) 2024-04-17

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