CN108140582B - 半导体衬底、半导体装置、半导体衬底的制造方法、以及半导体装置的制造方法 - Google Patents

半导体衬底、半导体装置、半导体衬底的制造方法、以及半导体装置的制造方法 Download PDF

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CN108140582B
CN108140582B CN201680058423.6A CN201680058423A CN108140582B CN 108140582 B CN108140582 B CN 108140582B CN 201680058423 A CN201680058423 A CN 201680058423A CN 108140582 B CN108140582 B CN 108140582B
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CN108140582A (zh
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鹿内洋志
佐藤宪
篠宫胜
土屋庆太郎
萩本和德
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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Sanken Electric Co Ltd
Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN201680058423.6A 2015-09-30 2016-08-29 半导体衬底、半导体装置、半导体衬底的制造方法、以及半导体装置的制造方法 Active CN108140582B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015194840A JP6735078B2 (ja) 2015-09-30 2015-09-30 半導体基体及び半導体装置
JP2015-194840 2015-09-30
PCT/JP2016/003915 WO2017056389A1 (ja) 2015-09-30 2016-08-29 半導体基体、半導体装置、半導体基体の製造方法、並びに、半導体装置の製造方法

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CN108140582B true CN108140582B (zh) 2021-06-04

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US (1) US10529842B2 (enExample)
JP (1) JP6735078B2 (enExample)
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CN (1) CN108140582B (enExample)
TW (1) TWI705506B (enExample)
WO (1) WO2017056389A1 (enExample)

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CN111613535B (zh) * 2019-02-26 2023-10-13 苏州晶湛半导体有限公司 一种半导体结构及其制备方法
US12176430B2 (en) * 2020-07-24 2024-12-24 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
JP7720768B2 (ja) 2021-10-28 2025-08-08 株式会社東芝 窒化物半導体、半導体装置、及び、窒化物半導体の製造方法

Citations (4)

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CN102420278A (zh) * 2010-09-28 2012-04-18 三星电子株式会社 半导体器件及其制造方法
CN103035698A (zh) * 2011-09-28 2013-04-10 富士通株式会社 半导体器件
CN103715242A (zh) * 2012-09-28 2014-04-09 富士通株式会社 半导体装置
TW201513174A (zh) * 2013-05-31 2015-04-01 三墾電氣股份有限公司 半導體基板、半導體裝置及半導體裝置的製造方法

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JP3767660B2 (ja) * 1998-03-17 2006-04-19 昭和電工株式会社 積層構造体及びそれを用いた化合物半導体デバイス
JP3642157B2 (ja) * 1997-05-26 2005-04-27 ソニー株式会社 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ
JP2010123725A (ja) * 2008-11-19 2010-06-03 Sanken Electric Co Ltd 化合物半導体基板及び該化合物半導体基板を用いた半導体装置
JP5634681B2 (ja) * 2009-03-26 2014-12-03 住友電工デバイス・イノベーション株式会社 半導体素子
JP5751074B2 (ja) * 2011-08-01 2015-07-22 富士通株式会社 半導体装置及び半導体装置の製造方法
CN102290434B (zh) * 2011-09-01 2013-08-14 西安电子科技大学 带栅下缓冲层结构的金属半导体场效应晶体管及制作方法
JP6013948B2 (ja) * 2013-03-13 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2015070064A (ja) * 2013-09-27 2015-04-13 富士通株式会社 半導体装置及び半導体装置の製造方法
CN104465912A (zh) * 2014-08-22 2015-03-25 江苏鑫博电子科技有限公司 一种高光能密度输出的 led 外延结构及外延方法

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CN102420278A (zh) * 2010-09-28 2012-04-18 三星电子株式会社 半导体器件及其制造方法
CN103035698A (zh) * 2011-09-28 2013-04-10 富士通株式会社 半导体器件
CN103715242A (zh) * 2012-09-28 2014-04-09 富士通株式会社 半导体装置
TW201513174A (zh) * 2013-05-31 2015-04-01 三墾電氣股份有限公司 半導體基板、半導體裝置及半導體裝置的製造方法

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Influence of Fe-doping on GaN grown on sapphire;Z.H. Feng, B. Liu, F.P. Yuan, J.Y. Yin, D. Liang, X.B. Li, Z. F;《Journal of Crystal Growth》;20070911;全文 *

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Publication number Publication date
JP2017069450A (ja) 2017-04-06
TWI705506B (zh) 2020-09-21
CN108140582A (zh) 2018-06-08
US10529842B2 (en) 2020-01-07
US20180269316A1 (en) 2018-09-20
KR20180058725A (ko) 2018-06-01
TW201721767A (zh) 2017-06-16
JP6735078B2 (ja) 2020-08-05
WO2017056389A1 (ja) 2017-04-06
KR102658784B1 (ko) 2024-04-17

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