KR102658784B1 - 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법 - Google Patents

반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법 Download PDF

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KR102658784B1
KR102658784B1 KR1020187008630A KR20187008630A KR102658784B1 KR 102658784 B1 KR102658784 B1 KR 102658784B1 KR 1020187008630 A KR1020187008630 A KR 1020187008630A KR 20187008630 A KR20187008630 A KR 20187008630A KR 102658784 B1 KR102658784 B1 KR 102658784B1
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KR20180058725A (ko
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히로시 시까우찌
겐 사또
마사루 시노미야
게이따로 즈찌야
가즈노리 하기모또
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산켄덴키 가부시키가이샤
신에쯔 한도타이 가부시키가이샤
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    • H01L21/02263—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H01L21/02329—
    • H01L21/0254—
    • H01L21/28—
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H01L2924/10323—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020187008630A 2015-09-30 2016-08-29 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법 Active KR102658784B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015194840A JP6735078B2 (ja) 2015-09-30 2015-09-30 半導体基体及び半導体装置
JPJP-P-2015-194840 2015-09-30
PCT/JP2016/003915 WO2017056389A1 (ja) 2015-09-30 2016-08-29 半導体基体、半導体装置、半導体基体の製造方法、並びに、半導体装置の製造方法

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Publication Number Publication Date
KR20180058725A KR20180058725A (ko) 2018-06-01
KR102658784B1 true KR102658784B1 (ko) 2024-04-17

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US (1) US10529842B2 (enExample)
JP (1) JP6735078B2 (enExample)
KR (1) KR102658784B1 (enExample)
CN (1) CN108140582B (enExample)
TW (1) TWI705506B (enExample)
WO (1) WO2017056389A1 (enExample)

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Publication number Priority date Publication date Assignee Title
CN111613535B (zh) * 2019-02-26 2023-10-13 苏州晶湛半导体有限公司 一种半导体结构及其制备方法
US12176430B2 (en) * 2020-07-24 2024-12-24 Vanguard International Semiconductor Corporation Semiconductor structure and semiconductor device
JP7720768B2 (ja) 2021-10-28 2025-08-08 株式会社東芝 窒化物半導体、半導体装置、及び、窒化物半導体の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613814B1 (ko) * 1997-05-26 2006-12-19 소니 가부시끼 가이샤 P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법
JP2014072430A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置
JP2014236050A (ja) * 2013-05-31 2014-12-15 サンケン電気株式会社 半導体基板、半導体装置、及び、半導体装置の製造方法

Family Cites Families (10)

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JP3767660B2 (ja) * 1998-03-17 2006-04-19 昭和電工株式会社 積層構造体及びそれを用いた化合物半導体デバイス
JP2010123725A (ja) * 2008-11-19 2010-06-03 Sanken Electric Co Ltd 化合物半導体基板及び該化合物半導体基板を用いた半導体装置
JP5634681B2 (ja) * 2009-03-26 2014-12-03 住友電工デバイス・イノベーション株式会社 半導体素子
KR20120032329A (ko) * 2010-09-28 2012-04-05 삼성전자주식회사 반도체 소자
JP5751074B2 (ja) * 2011-08-01 2015-07-22 富士通株式会社 半導体装置及び半導体装置の製造方法
CN102290434B (zh) * 2011-09-01 2013-08-14 西安电子科技大学 带栅下缓冲层结构的金属半导体场效应晶体管及制作方法
JP5987288B2 (ja) * 2011-09-28 2016-09-07 富士通株式会社 半導体装置
JP6013948B2 (ja) * 2013-03-13 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2015070064A (ja) * 2013-09-27 2015-04-13 富士通株式会社 半導体装置及び半導体装置の製造方法
CN104465912A (zh) * 2014-08-22 2015-03-25 江苏鑫博电子科技有限公司 一种高光能密度输出的 led 外延结构及外延方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613814B1 (ko) * 1997-05-26 2006-12-19 소니 가부시끼 가이샤 P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법
JP2014072430A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 半導体装置
JP2014236050A (ja) * 2013-05-31 2014-12-15 サンケン電気株式会社 半導体基板、半導体装置、及び、半導体装置の製造方法

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JP2017069450A (ja) 2017-04-06
TWI705506B (zh) 2020-09-21
CN108140582A (zh) 2018-06-08
US10529842B2 (en) 2020-01-07
US20180269316A1 (en) 2018-09-20
KR20180058725A (ko) 2018-06-01
TW201721767A (zh) 2017-06-16
CN108140582B (zh) 2021-06-04
JP6735078B2 (ja) 2020-08-05
WO2017056389A1 (ja) 2017-04-06

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