KR20180058725A - 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법 - Google Patents
반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 138
- 239000000758 substrate Substances 0.000 title claims abstract description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052796 boron Inorganic materials 0.000 claims abstract description 99
- 150000004767 nitrides Chemical class 0.000 claims abstract description 25
- 230000007423 decrease Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 229910052723 transition metal Inorganic materials 0.000 claims description 8
- 150000003624 transition metals Chemical class 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 239000007792 gaseous phase Substances 0.000 claims description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 36
- 239000010410 layer Substances 0.000 description 250
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 99
- 229910052742 iron Inorganic materials 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 20
- 238000011156 evaluation Methods 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 12
- 230000003247 decreasing effect Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000010191 image analysis Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- -1 SiO Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
도 2는 반도체 기체의 실시 형태의 일례를 도시하는 개략 단면도이다.
도 3은 반도체 장치의 실시 형태의 일례를 도시하는 개략 단면도이다.
도 4는 반도체 기체의 제조 방법의 실시 형태의 일례를 도시하는 공정 단면도이다.
도 5는 반도체 장치의 제조 방법의 실시 형태의 일례를 도시하는 공정 단면도이다.
도 6은 실시예 1∼3, 비교예 1∼3에 있어서의 반도체 기체의 불순물 프로파일을 도시하는 도면이다.
도 7은 실시예 1, 비교예 1∼3의 반도체 기체의 현미경 암시야 화상 해석에 의한 피트 밀도 평가 결과를 도시하는 도면이다.
도 8은 실시예 1, 비교예 2∼3의 반도체 장치의 디바이스 내압(세로 방향 내압) 측정 결과를 도시하는 도면이다.
도 9는 디바이스 내압(세로 방향 내압)의 측정 방법을 도시하는 도면이다.
도 10은 실시예 1의 반도체 기체의 붕소 농도 프로파일을 도시하는 도면이다.
도 11은 버퍼층의 적층체 중의 AlN층과 GaN층에서 철 농도를 변화시킨 경우의 반도체 기체의 불순물 프로파일을 도시하는 도면이다.
Claims (11)
- 기판과,
질화물 반도체를 포함하며, 상기 기판 위에 형성되는 버퍼층과,
질화물 반도체를 포함하며, 상기 버퍼층 위에 형성되는 채널층
을 구비하고,
상기 버퍼층은,
상기 기판측에 형성되며, 붕소 농도가 억셉터 원소 농도보다도 높은 제1 영역과,
상기 제1 영역 위에 형성되며, 상기 제1 영역보다 붕소 농도가 낮고, 상기 제1 영역보다 억셉터 원소 농도가 높은 제2 영역
을 포함하는 것을 특징으로 하는 반도체 기체. - 제1항에 있어서,
상기 버퍼층이, 붕소 농도가 상기 기판측으로부터 상기 채널층측을 향하여 감소하는 감소 영역을 포함하고,
상기 버퍼층이, 상기 감소 영역의 붕소 농도 감소 개시 위치보다도 상기 채널층측에, 억셉터 원소가 상기 기판측으로부터 상기 채널층측을 향하여 증가하는 증가 영역을 포함하는 것을 특징으로 하는 반도체 기체. - 제1항 또는 제2항에 있어서,
상기 버퍼층이 상기 기판측에 AlN을 포함하는 초기층을 포함하고,
상기 초기층은 억셉터 원소를 포함하지 않는 것을 특징으로 하는 반도체 기체. - 제1항 또는 제2항에 있어서,
상기 버퍼층이 상기 기판측에 AlN을 포함하는 초기층을 포함하고,
상기 초기층의 억셉터 원소 농도는, 상기 초기층의 붕소 농도보다도 낮은 것을 특징으로 하는 반도체 기체. - 제1항 내지 제4항 중 어느 한 항에 있어서,
상기 억셉터 원소가, 전이 금속, 탄소, 마그네슘 중 어느 것인 것을 특징으로 하는 반도체 기체. - 제1항 내지 제5항 중 어느 한 항에 기재된 반도체 기체와,
상기 채널층 위에 형성된 전극
을 구비하는 것을 특징으로 하는 반도체 장치. - 기판 위에 질화물 반도체를 포함하는 버퍼층을 형성하는 공정과, 상기 버퍼층 위에 질화물 반도체를 포함하는 채널층을 형성하는 공정을 갖는 반도체 기체의 제조 방법으로서,
상기 버퍼층은, 상기 기판측에 AlN을 포함하는 초기층을 포함하고,
상기 버퍼층을 형성하는 공정은, 상기 버퍼층의 붕소 농도가 상기 기판측으로부터 상기 채널층측을 향하여 서서히 감소하도록, 상기 버퍼층에 붕소를 도입하는 단계를 포함하고,
상기 버퍼층을 형성하는 공정에 있어서, 상기 초기층이 형성된 후에 억셉터 원소의 도핑을 개시하는 것을 특징으로 하는 반도체 기체의 제조 방법. - 제7항에 있어서,
상기 기판으로서, 붕소가 도프된 기판을 사용하고,
상기 버퍼층에 붕소를 도입하는 단계는, 열 확산에 의해 붕소가 도프된 상기 기판으로부터 상기 버퍼층에 붕소를 확산시키는 단계를 포함하는 것을 특징으로 하는 반도체 기체의 제조 방법. - 제7항 또는 제8항에 있어서,
상기 버퍼층에 붕소를 도입하는 단계는, 상기 버퍼층을 기상 성장에 의해 형성할 때에, 붕소 함유의 도펀트 가스를 도입함으로써 기상으로부터 붕소를 도핑하는 단계를 포함하는 것을 특징으로 하는 반도체 기체의 제조 방법. - 제7항 내지 제9항 중 어느 한 항에 있어서,
상기 억셉터 원소로서, 전이 금속, 탄소, 마그네슘 중 어느 것을 사용하는 것을 특징으로 하는 반도체 기체의 제조 방법. - 제7항 내지 제10항 중 어느 한 항에 기재된 반도체 기체의 제조 방법에 의해 제조된 반도체 기체를 준비하는 공정과,
상기 채널층 위에 전극을 형성하는 공정
을 갖는 것을 특징으로 하는 반도체 장치의 제조 방법.
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JP2015194840A JP6735078B2 (ja) | 2015-09-30 | 2015-09-30 | 半導体基体及び半導体装置 |
JPJP-P-2015-194840 | 2015-09-30 | ||
PCT/JP2016/003915 WO2017056389A1 (ja) | 2015-09-30 | 2016-08-29 | 半導体基体、半導体装置、半導体基体の製造方法、並びに、半導体装置の製造方法 |
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JP2010123725A (ja) | 2008-11-19 | 2010-06-03 | Sanken Electric Co Ltd | 化合物半導体基板及び該化合物半導体基板を用いた半導体装置 |
JP2014072430A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 半導体装置 |
JP2014236050A (ja) | 2013-05-31 | 2014-12-15 | サンケン電気株式会社 | 半導体基板、半導体装置、及び、半導体装置の製造方法 |
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US10529842B2 (en) | 2020-01-07 |
US20180269316A1 (en) | 2018-09-20 |
KR102658784B1 (ko) | 2024-04-17 |
CN108140582B (zh) | 2021-06-04 |
TW201721767A (zh) | 2017-06-16 |
CN108140582A (zh) | 2018-06-08 |
TWI705506B (zh) | 2020-09-21 |
WO2017056389A1 (ja) | 2017-04-06 |
JP6735078B2 (ja) | 2020-08-05 |
JP2017069450A (ja) | 2017-04-06 |
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