JP6724120B2 - 基板処理装置、半導体装置の製造方法及びプログラム - Google Patents
基板処理装置、半導体装置の製造方法及びプログラム Download PDFInfo
- Publication number
- JP6724120B2 JP6724120B2 JP2018229665A JP2018229665A JP6724120B2 JP 6724120 B2 JP6724120 B2 JP 6724120B2 JP 2018229665 A JP2018229665 A JP 2018229665A JP 2018229665 A JP2018229665 A JP 2018229665A JP 6724120 B2 JP6724120 B2 JP 6724120B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- substrates
- processing
- product
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 390
- 238000012545 processing Methods 0.000 title claims description 338
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000012546 transfer Methods 0.000 claims description 175
- 238000000034 method Methods 0.000 claims description 145
- 230000008569 process Effects 0.000 claims description 120
- 238000003860 storage Methods 0.000 claims description 45
- 238000012423 maintenance Methods 0.000 claims description 34
- 230000007246 mechanism Effects 0.000 claims description 31
- 238000002791 soaking Methods 0.000 claims description 21
- 239000000969 carrier Substances 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 260
- 239000007789 gas Substances 0.000 description 95
- 239000000047 product Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 24
- 239000010408 film Substances 0.000 description 13
- 239000011261 inert gas Substances 0.000 description 13
- 230000004044 response Effects 0.000 description 6
- 238000011144 upstream manufacturing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000012790 confirmation Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107145120A TWI719375B (zh) | 2017-12-20 | 2018-12-14 | 基板處理裝置、半導體裝置之製造方法及記錄媒體 |
| CN201811544173.4A CN109950187B (zh) | 2017-12-20 | 2018-12-17 | 基板处理装置、半导体装置的制造方法以及记录介质 |
| US16/225,671 US11094572B2 (en) | 2017-12-20 | 2018-12-19 | Substrate processing apparatus and recording medium |
| KR1020180165290A KR102276906B1 (ko) | 2017-12-20 | 2018-12-19 | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 |
| JP2020076166A JP6913789B2 (ja) | 2017-12-20 | 2020-04-22 | 基板処理装置、半導体装置の製造方法及びプログラム |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017243741 | 2017-12-20 | ||
| JP2017243741 | 2017-12-20 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020076166A Division JP6913789B2 (ja) | 2017-12-20 | 2020-04-22 | 基板処理装置、半導体装置の製造方法及びプログラム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019114784A JP2019114784A (ja) | 2019-07-11 |
| JP6724120B2 true JP6724120B2 (ja) | 2020-07-15 |
Family
ID=67221646
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018229665A Active JP6724120B2 (ja) | 2017-12-20 | 2018-12-07 | 基板処理装置、半導体装置の製造方法及びプログラム |
| JP2020076166A Active JP6913789B2 (ja) | 2017-12-20 | 2020-04-22 | 基板処理装置、半導体装置の製造方法及びプログラム |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020076166A Active JP6913789B2 (ja) | 2017-12-20 | 2020-04-22 | 基板処理装置、半導体装置の製造方法及びプログラム |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP6724120B2 (zh) |
| TW (1) | TWI719375B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116195038A (zh) | 2020-09-25 | 2023-05-30 | 株式会社国际电气 | 基板配置数据的显示方法、半导体装置的制造方法以及基板处理装置和程序 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3258748B2 (ja) * | 1993-02-08 | 2002-02-18 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP4383636B2 (ja) * | 2000-06-29 | 2009-12-16 | 株式会社日立国際電気 | 半導体製造装置および半導体装置の製造方法 |
| JP2002141391A (ja) * | 2000-11-06 | 2002-05-17 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP2003051497A (ja) * | 2001-08-08 | 2003-02-21 | Tokyo Electron Ltd | 熱処理方法および熱処理装置 |
| JP3835751B2 (ja) * | 2002-06-14 | 2006-10-18 | 株式会社日立国際電気 | 縦型拡散／ｃｖｄ装置及びウェーハ移載方法 |
| TW588273B (en) * | 2003-01-29 | 2004-05-21 | Taiwan Semiconductor Mfg | Calculating method of control wafer usage |
| JP2008053603A (ja) * | 2006-08-28 | 2008-03-06 | Hitachi Kokusai Electric Inc | 基板処理システム |
| JP6026801B2 (ja) * | 2011-10-19 | 2016-11-16 | 株式会社日立国際電気 | 基板処理装置、基板搬送方法及び半導体装置の製造方法 |
| JP5921200B2 (ja) * | 2012-01-05 | 2016-05-24 | 株式会社日立国際電気 | 基板処理装置、基板処理方法、半導体装置の製造方法、縮退運用プログラムおよび生産リストの作成プログラム |
| JP6144924B2 (ja) * | 2012-03-21 | 2017-06-07 | 株式会社日立国際電気 | 基板処理装置、メンテナンス方法及びプログラム |
| JP2015173154A (ja) * | 2014-03-11 | 2015-10-01 | 東京エレクトロン株式会社 | 縦型熱処理装置、縦型熱処理装置の運転方法及び記憶媒体 |
| JP6213487B2 (ja) * | 2014-03-24 | 2017-10-18 | 東京エレクトロン株式会社 | 縦型熱処理装置の運転方法、記憶媒体及び縦型熱処理装置 |
-
2018
- 2018-12-07 JP JP2018229665A patent/JP6724120B2/ja active Active
- 2018-12-14 TW TW107145120A patent/TWI719375B/zh active
-
2020
- 2020-04-22 JP JP2020076166A patent/JP6913789B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI719375B (zh) | 2021-02-21 |
| JP6913789B2 (ja) | 2021-08-04 |
| JP2019114784A (ja) | 2019-07-11 |
| TW201929132A (zh) | 2019-07-16 |
| JP2020145440A (ja) | 2020-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102276906B1 (ko) | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 | |
| CN108074845B (zh) | 基板处理装置、反应管以及半导体装置的制造方法 | |
| CN104253073B (zh) | 衬底处理装置、半导体器件的制造方法及流量监视方法 | |
| JP6301083B2 (ja) | 基板処理装置、半導体装置の製造方法、及びレシピの作成方法 | |
| US8538571B2 (en) | Substrate processing system, group managing apparatus, and method of analyzing abnormal state | |
| US6975917B2 (en) | Heat treatment method and heat treatment device | |
| JP5600503B2 (ja) | 統計解析方法、基板処理システムおよびプログラム | |
| JPWO2014115643A1 (ja) | 基板処理装置の異常判定方法、異常判定装置、及び基板処理システム並びに記録媒体 | |
| KR20180041709A (ko) | 기판 처리 시스템, 기판 처리 장치의 파일 관리 방법, 프로그램, 기판 처리 장치 및 관리 장치 | |
| US20100055808A1 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
| JP6724120B2 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
| KR20210127738A (ko) | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 | |
| WO2011021635A1 (ja) | 基板処理システム、群管理装置及び基板処理システムにおける表示方法 | |
| KR102377168B1 (ko) | 반응관, 기판 처리 장치 및 반도체 장치의 제조 방법 | |
| KR102384558B1 (ko) | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 | |
| WO2018154829A1 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
| JP6802903B2 (ja) | 基板処理装置及びその表示方法並びに半導体装置の製造方法 | |
| CN112750720B (zh) | 衬底处理装置、半导体器件的制造方法以及记录介质 | |
| CN110323154A (zh) | 基板处理装置、控制系统及半导体器件的制造方法 | |
| JP2013074039A (ja) | 群管理装置 | |
| JP7170692B2 (ja) | 基板処理装置、半導体装置の製造方法及びプログラム | |
| JP6683490B2 (ja) | 運搬治具、基板処理装置および半導体装置の製造方法 | |
| JP2011054601A (ja) | 基板処理システム | |
| JP2007201295A (ja) | 基板処理装置 | |
| JP2007258340A (ja) | 基板処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190311 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20190325 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200225 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200422 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200526 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200624 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6724120 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |