JP6719600B2 - 多結晶セラミック基板およびその製造方法 - Google Patents

多結晶セラミック基板およびその製造方法 Download PDF

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JP6719600B2
JP6719600B2 JP2018567717A JP2018567717A JP6719600B2 JP 6719600 B2 JP6719600 B2 JP 6719600B2 JP 2018567717 A JP2018567717 A JP 2018567717A JP 2018567717 A JP2018567717 A JP 2018567717A JP 6719600 B2 JP6719600 B2 JP 6719600B2
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layer
bonding
ceramic substrate
barrier
single crystal
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JP2019524615A (ja
JP2019524615A5 (enExample
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オドノブリュードフ，ウラジミール
バセリ，セム
ファーレンズ，シャリ
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クロミス，インコーポレイテッド
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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  • Power Engineering (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Recrystallisation Techniques (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Prostheses (AREA)
JP2018567717A 2016-06-24 2017-06-13 多結晶セラミック基板およびその製造方法 Active JP6719600B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662354623P 2016-06-24 2016-06-24
US62/354,623 2016-06-24
PCT/US2017/037213 WO2017222873A1 (en) 2016-06-24 2017-06-13 Polycrystalline ceramic substrate and method of manufacture

Related Child Applications (1)

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JP2020103432A Division JP7169321B2 (ja) 2016-06-24 2020-06-16 多結晶セラミック基板

Publications (3)

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JP2019524615A JP2019524615A (ja) 2019-09-05
JP2019524615A5 JP2019524615A5 (enExample) 2019-11-28
JP6719600B2 true JP6719600B2 (ja) 2020-07-08

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JP2018567717A Active JP6719600B2 (ja) 2016-06-24 2017-06-13 多結晶セラミック基板およびその製造方法
JP2020103432A Active JP7169321B2 (ja) 2016-06-24 2020-06-16 多結晶セラミック基板
JP2022173496A Active JP7611208B2 (ja) 2016-06-24 2022-10-28 電力およびｒｆ用途用の設計された基板構造
JP2024134987A Pending JP2025003942A (ja) 2016-06-24 2024-08-13 電力およびｒｆ用途用の設計された基板構造

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JP2020103432A Active JP7169321B2 (ja) 2016-06-24 2020-06-16 多結晶セラミック基板
JP2022173496A Active JP7611208B2 (ja) 2016-06-24 2022-10-28 電力およびｒｆ用途用の設計された基板構造
JP2024134987A Pending JP2025003942A (ja) 2016-06-24 2024-08-13 電力およびｒｆ用途用の設計された基板構造

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Country Link
US (6) US10134589B2 (enExample)
EP (2) EP3475975B1 (enExample)
JP (4) JP6719600B2 (enExample)
KR (4) KR102747292B1 (enExample)
CN (2) CN116936703A (enExample)
SG (1) SG11201811295TA (enExample)
TW (5) TWI850134B (enExample)
WO (1) WO2017222873A1 (enExample)

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US10290674B2 (en) 2016-04-22 2019-05-14 QROMIS, Inc. Engineered substrate including light emitting diode and power circuitry
US10297445B2 (en) * 2016-06-14 2019-05-21 QROMIS, Inc. Engineered substrate structure for power and RF applications
TWI850134B (zh) 2016-06-24 2024-07-21 美商克若密斯股份有限公司 工程基板結構之製造方法
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
US10411108B2 (en) 2017-03-29 2019-09-10 QROMIS, Inc. Vertical gallium nitride Schottky diode
TWI789420B (zh) * 2017-08-31 2023-01-11 美商康寧公司 可攜式電子裝置的外殼及製造其之方法
CN110473919A (zh) * 2018-05-11 2019-11-19 世界先进积体电路股份有限公司 半导体结构、高电子迁移率晶体管及半导体结构制造方法
CN110752251A (zh) * 2018-07-24 2020-02-04 兆远科技股份有限公司 复合衬底及其制造方法
TWI736962B (zh) * 2019-01-31 2021-08-21 財團法人工業技術研究院 複合式基板及其製造方法
US11688825B2 (en) 2019-01-31 2023-06-27 Industrial Technology Research Institute Composite substrate and light-emitting diode
CN111509095B (zh) * 2019-01-31 2022-01-04 财团法人工业技术研究院 复合式基板及其制造方法
TWI706563B (zh) * 2019-03-25 2020-10-01 世界先進積體電路股份有限公司 半導體結構、高電子遷移率電晶體及半導體結構的製造方法
CN111785773A (zh) * 2019-04-04 2020-10-16 世界先进积体电路股份有限公司 半导体结构、高电子迁移率晶体管及半导体结构制造方法
US10790143B1 (en) 2019-07-03 2020-09-29 Vanguard International Semiconductor Corporation Semiconductor structure, high electron mobility transistor, and method for fabricating semiconductor structure
US12046502B2 (en) * 2019-09-09 2024-07-23 Watlow Electric Manufacturing Company Electrostatic puck and method of manufacture
KR102789020B1 (ko) * 2019-12-19 2025-04-01 삼성전기주식회사 전자부품 내장기판
JP7701364B2 (ja) 2020-02-11 2025-07-01 クロミス，インコーポレイテッド スパッタリングされたマグネシウム源を使用して窒化ガリウム材料中のマグネシウムを拡散させるための方法およびシステム
JP7319227B2 (ja) * 2020-05-11 2023-08-01 信越化学工業株式会社 Ｉｉｉ－ｖ族化合物結晶用ベース基板及びその製造方法
CN115698391A (zh) * 2020-06-09 2023-02-03 信越化学工业株式会社 Iii族氮化物系外延生长用基板及其制造方法
JP7368336B2 (ja) * 2020-09-30 2023-10-24 信越半導体株式会社 紫外線発光素子用金属貼り合わせ基板の製造方法、及び紫外線発光素子の製造方法
US11462402B2 (en) * 2020-10-21 2022-10-04 Cornell University Suboxide molecular-beam epitaxy and related structures
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