JP6693438B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6693438B2
JP6693438B2 JP2017025929A JP2017025929A JP6693438B2 JP 6693438 B2 JP6693438 B2 JP 6693438B2 JP 2017025929 A JP2017025929 A JP 2017025929A JP 2017025929 A JP2017025929 A JP 2017025929A JP 6693438 B2 JP6693438 B2 JP 6693438B2
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Japan
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region
resistance
sense
sense element
main element
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Japanese (ja)
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JP2018133433A (ja
JP2018133433A5 (enExample
Inventor
峻丞 原田
峻丞 原田
久登 加藤
久登 加藤
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Denso Corp
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Denso Corp
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Priority to JP2017025929A priority Critical patent/JP6693438B2/ja
Priority to CN201780086349.3A priority patent/CN110291643A/zh
Priority to DE112017007068.6T priority patent/DE112017007068T8/de
Priority to PCT/JP2017/045324 priority patent/WO2018150713A1/ja
Publication of JP2018133433A publication Critical patent/JP2018133433A/ja
Publication of JP2018133433A5 publication Critical patent/JP2018133433A5/ja
Priority to US16/513,047 priority patent/US20190341483A1/en
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Publication of JP6693438B2 publication Critical patent/JP6693438B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/10—Measuring sum, difference or ratio
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/669—Vertical DMOS [VDMOS] FETs having voltage-sensing or current-sensing structures, e.g. emulator sections or overcurrent sensing cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/155—Shapes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2017025929A 2017-02-15 2017-02-15 半導体装置 Active JP6693438B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017025929A JP6693438B2 (ja) 2017-02-15 2017-02-15 半導体装置
CN201780086349.3A CN110291643A (zh) 2017-02-15 2017-12-18 半导体装置
DE112017007068.6T DE112017007068T8 (de) 2017-02-15 2017-12-18 Halbleitervorrichtung
PCT/JP2017/045324 WO2018150713A1 (ja) 2017-02-15 2017-12-18 半導体装置
US16/513,047 US20190341483A1 (en) 2017-02-15 2019-07-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017025929A JP6693438B2 (ja) 2017-02-15 2017-02-15 半導体装置

Publications (3)

Publication Number Publication Date
JP2018133433A JP2018133433A (ja) 2018-08-23
JP2018133433A5 JP2018133433A5 (enExample) 2019-05-30
JP6693438B2 true JP6693438B2 (ja) 2020-05-13

Family

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Family Applications (1)

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JP2017025929A Active JP6693438B2 (ja) 2017-02-15 2017-02-15 半導体装置

Country Status (5)

Country Link
US (1) US20190341483A1 (enExample)
JP (1) JP6693438B2 (enExample)
CN (1) CN110291643A (enExample)
DE (1) DE112017007068T8 (enExample)
WO (1) WO2018150713A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11063146B2 (en) * 2019-01-10 2021-07-13 Texas Instruments Incorporated Back-to-back power field-effect transistors with associated current sensors
JP7092044B2 (ja) 2019-01-16 2022-06-28 株式会社デンソー 半導体装置
US10931272B2 (en) 2019-03-22 2021-02-23 Infineon Technologies Ag Transistor arrangement with a load transistor and a sense transistor
CN113661576B (zh) * 2019-04-10 2024-03-08 三菱电机株式会社 半导体装置
JP7363079B2 (ja) * 2019-04-15 2023-10-18 富士電機株式会社 半導体装置
US11004970B2 (en) 2019-05-20 2021-05-11 Nxp Usa, Inc. Mirror device structure for power MOSFET and method of manufacture
JP7099404B2 (ja) * 2019-05-27 2022-07-12 株式会社デンソー 負荷駆動装置
JP7310343B2 (ja) * 2019-06-14 2023-07-19 富士電機株式会社 半導体装置
JP7425943B2 (ja) * 2019-12-12 2024-02-01 株式会社デンソー 炭化珪素半導体装置
US12068408B2 (en) * 2020-07-15 2024-08-20 Semiconductor Components Industries, Llc High electron mobility transistor
US11410990B1 (en) * 2020-08-25 2022-08-09 Semiq Incorporated Silicon carbide MOSFET with optional asymmetric gate clamp
US11495680B2 (en) * 2020-11-25 2022-11-08 Infineon Technologies Austria Ag Semiconductor device with integrated current sensor
JP7571560B2 (ja) * 2021-01-15 2024-10-23 株式会社デンソー 半導体装置
EP4181212A1 (en) * 2021-11-11 2023-05-17 Infineon Technologies Dresden GmbH & Co . KG Semiconductor device
JP2023146998A (ja) 2022-03-29 2023-10-12 富士電機株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3515298B2 (ja) * 1995-12-07 2004-04-05 株式会社東芝 半導体装置
JP3450650B2 (ja) * 1997-06-24 2003-09-29 株式会社東芝 半導体装置
JP2008235788A (ja) * 2007-03-23 2008-10-02 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP4748149B2 (ja) * 2007-12-24 2011-08-17 株式会社デンソー 半導体装置
WO2009096412A1 (ja) * 2008-01-29 2009-08-06 Fuji Electric Device Technology Co., Ltd. 半導体装置
DE112009004595B4 (de) * 2009-03-24 2015-04-09 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
DE112009004805B4 (de) * 2009-05-28 2019-03-28 Toyota Jidosha Kabushiki Kaisha Halbleitervorrichtung
CN104471710A (zh) * 2012-07-20 2015-03-25 三菱电机株式会社 半导体装置及其制造方法
JP5758365B2 (ja) * 2012-09-21 2015-08-05 株式会社東芝 電力用半導体素子
CN107710401B (zh) * 2015-07-02 2021-04-20 三菱电机株式会社 半导体装置

Also Published As

Publication number Publication date
DE112017007068T8 (de) 2019-12-19
US20190341483A1 (en) 2019-11-07
JP2018133433A (ja) 2018-08-23
DE112017007068T5 (de) 2019-10-31
CN110291643A (zh) 2019-09-27
WO2018150713A1 (ja) 2018-08-23

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