JP6685884B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP6685884B2
JP6685884B2 JP2016231244A JP2016231244A JP6685884B2 JP 6685884 B2 JP6685884 B2 JP 6685884B2 JP 2016231244 A JP2016231244 A JP 2016231244A JP 2016231244 A JP2016231244 A JP 2016231244A JP 6685884 B2 JP6685884 B2 JP 6685884B2
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JP
Japan
Prior art keywords
semiconductor package
semiconductor
wiring
side conductor
igbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016231244A
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English (en)
Japanese (ja)
Other versions
JP2017108130A (ja
JP2017108130A5 (enExample
Inventor
達郎 刀禰館
達郎 刀禰館
英太郎 三宅
英太郎 三宅
健太郎 高尾
健太郎 高尾
史朗 岡田
史朗 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of JP2017108130A publication Critical patent/JP2017108130A/ja
Publication of JP2017108130A5 publication Critical patent/JP2017108130A5/ja
Application granted granted Critical
Publication of JP6685884B2 publication Critical patent/JP6685884B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H10W40/25—
    • H10W20/42—
    • H10W20/4421—
    • H10W40/778—
    • H10W70/421—
    • H10W70/461—
    • H10W70/611—
    • H10W70/65—
    • H10W70/658—
    • H10W72/00—
    • H10W90/00—
    • H10W90/701—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H10W40/255—
    • H10W70/424—
    • H10W70/479—
    • H10W70/481—
    • H10W72/07336—
    • H10W72/07351—
    • H10W72/07354—
    • H10W72/07636—
    • H10W72/07651—
    • H10W72/30—
    • H10W72/325—
    • H10W72/347—
    • H10W72/352—
    • H10W72/381—
    • H10W72/60—
    • H10W72/655—
    • H10W72/865—
    • H10W72/871—
    • H10W72/884—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Geometry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
JP2016231244A 2015-11-30 2016-11-29 半導体モジュール Active JP6685884B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015233751 2015-11-30
JP2015233751 2015-11-30

Publications (3)

Publication Number Publication Date
JP2017108130A JP2017108130A (ja) 2017-06-15
JP2017108130A5 JP2017108130A5 (enExample) 2019-03-22
JP6685884B2 true JP6685884B2 (ja) 2020-04-22

Family

ID=58777338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016231244A Active JP6685884B2 (ja) 2015-11-30 2016-11-29 半導体モジュール

Country Status (2)

Country Link
US (1) US10217690B2 (enExample)
JP (1) JP6685884B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10637345B2 (en) * 2016-07-08 2020-04-28 Mitsubishi Electric Corporation Semiconductor device and power conversion device
WO2018020729A1 (ja) * 2016-07-27 2018-02-01 株式会社日立製作所 半導体モジュールおよび半導体モジュールの製造方法
JP6891904B2 (ja) * 2017-02-06 2021-06-18 富士電機株式会社 半導体モジュール、電気自動車およびパワーコントロールユニット
JP6470328B2 (ja) * 2017-02-09 2019-02-13 株式会社東芝 半導体モジュール
WO2018181727A1 (ja) * 2017-03-30 2018-10-04 三菱電機株式会社 半導体装置およびその製造方法、ならびに電力変換装置
TWI675441B (zh) * 2018-05-14 2019-10-21 欣興電子股份有限公司 封裝載板結構及其製造方法
US12463118B2 (en) * 2020-04-17 2025-11-04 Rohm Co., Ltd. Semiconductor device
JP7301805B2 (ja) * 2020-09-24 2023-07-03 株式会社東芝 半導体モジュール
JP7354076B2 (ja) 2020-09-24 2023-10-02 株式会社東芝 半導体モジュール

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW353220B (en) * 1996-08-20 1999-02-21 Toshiba Corp Silicon nitride circuit board and semiconductor module
EP1579496A2 (en) * 2002-12-20 2005-09-28 Koninklijke Philips Electronics N.V. Electronic device and method of manufacturing same
JP2004241734A (ja) * 2003-02-10 2004-08-26 Toyota Industries Corp 半導体モジュール
JP2005109100A (ja) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006080153A (ja) * 2004-09-07 2006-03-23 Toshiba Corp 半導体装置
JP4770533B2 (ja) 2005-05-16 2011-09-14 富士電機株式会社 半導体装置の製造方法および半導体装置
JP4775327B2 (ja) * 2007-06-06 2011-09-21 富士電機株式会社 半導体装置の製造方法
US8138587B2 (en) * 2008-09-30 2012-03-20 Infineon Technologies Ag Device including two mounting surfaces
JP2011086889A (ja) * 2009-10-19 2011-04-28 Renesas Electronics Corp 半導体装置およびその製造方法
US8120158B2 (en) * 2009-11-10 2012-02-21 Infineon Technologies Ag Laminate electronic device
JP5253455B2 (ja) * 2010-06-01 2013-07-31 三菱電機株式会社 パワー半導体装置
JP5520889B2 (ja) * 2011-06-24 2014-06-11 日立オートモティブシステムズ株式会社 パワー半導体モジュール及びそれを用いた電力変換装置
JP5706251B2 (ja) * 2011-06-30 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置
JP5863602B2 (ja) 2011-08-31 2016-02-16 三菱電機株式会社 電力用半導体装置
JP2013097560A (ja) 2011-10-31 2013-05-20 Mitsubishi Heavy Ind Ltd 建設工事の工程最適化システム及び建設工事の工程最適化方法
JP5965687B2 (ja) 2012-03-23 2016-08-10 株式会社 日立パワーデバイス パワー半導体モジュール
JP2014157927A (ja) * 2013-02-15 2014-08-28 Denso Corp 半導体装置及びその製造方法
JP2015095560A (ja) * 2013-11-12 2015-05-18 株式会社デンソー パワーモジュール
JP2015144188A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法

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Publication number Publication date
JP2017108130A (ja) 2017-06-15
US20170154834A1 (en) 2017-06-01
US10217690B2 (en) 2019-02-26

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