JP6661371B2 - 評価方法、露光方法、および物品の製造方法 - Google Patents

評価方法、露光方法、および物品の製造方法 Download PDF

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Publication number
JP6661371B2
JP6661371B2 JP2015254866A JP2015254866A JP6661371B2 JP 6661371 B2 JP6661371 B2 JP 6661371B2 JP 2015254866 A JP2015254866 A JP 2015254866A JP 2015254866 A JP2015254866 A JP 2015254866A JP 6661371 B2 JP6661371 B2 JP 6661371B2
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Prior art keywords
optical system
projection optical
information
value
evaluation
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Japanese (ja)
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JP2017116867A5 (enExample
JP2017116867A (ja
Inventor
徹 大久保
徹 大久保
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2015254866A priority Critical patent/JP6661371B2/ja
Priority to TW105135975A priority patent/TWI643029B/zh
Priority to KR1020160172663A priority patent/KR102126232B1/ko
Priority to CN201611180236.3A priority patent/CN106919004B/zh
Publication of JP2017116867A publication Critical patent/JP2017116867A/ja
Publication of JP2017116867A5 publication Critical patent/JP2017116867A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lens Barrels (AREA)
JP2015254866A 2015-12-25 2015-12-25 評価方法、露光方法、および物品の製造方法 Active JP6661371B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015254866A JP6661371B2 (ja) 2015-12-25 2015-12-25 評価方法、露光方法、および物品の製造方法
TW105135975A TWI643029B (zh) 2015-12-25 2016-11-04 評價方法、曝光方法、及物品的製造方法
KR1020160172663A KR102126232B1 (ko) 2015-12-25 2016-12-16 평가 방법, 노광 방법, 및 물품의 제조 방법
CN201611180236.3A CN106919004B (zh) 2015-12-25 2016-12-20 评价方法、曝光方法以及物品的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015254866A JP6661371B2 (ja) 2015-12-25 2015-12-25 評価方法、露光方法、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2017116867A JP2017116867A (ja) 2017-06-29
JP2017116867A5 JP2017116867A5 (enExample) 2019-01-10
JP6661371B2 true JP6661371B2 (ja) 2020-03-11

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Country Link
JP (1) JP6661371B2 (enExample)
KR (1) KR102126232B1 (enExample)
CN (1) CN106919004B (enExample)
TW (1) TWI643029B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6978926B2 (ja) * 2017-12-18 2021-12-08 キヤノン株式会社 計測方法、計測装置、露光装置、および物品製造方法
JP7105582B2 (ja) * 2018-03-09 2022-07-25 キヤノン株式会社 決定方法、露光方法、露光装置、物品の製造方法及びプログラム
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
WO2025149231A1 (en) * 2024-01-11 2025-07-17 Asml Netherlands B.V. Improvements to lithographic methods and apparatus

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JPH068926B2 (ja) * 1984-08-24 1994-02-02 キヤノン株式会社 面位置検出方法
JPH02157844A (ja) * 1988-12-12 1990-06-18 Nikon Corp 露光条件測定用マスク並びに該マスクを用いた露光条件測定方法及び装置
JP3013463B2 (ja) * 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
JPH10284414A (ja) * 1997-04-10 1998-10-23 Nikon Corp 結像位置検出装置及び半導体デバイスの製造方法
JPH11260703A (ja) * 1998-03-16 1999-09-24 Sony Corp 露光装置および露光装置の投影レンズの評価方法
JP4649717B2 (ja) * 1999-10-01 2011-03-16 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP2002022609A (ja) * 2000-07-10 2002-01-23 Canon Inc 投影露光装置
JPWO2002050506A1 (ja) * 2000-12-18 2004-04-22 株式会社ニコン 波面計測装置及びその使用方法、結像特性計測方法及び装置、結像特性補正方法及び装置、結像特性管理方法、並びに露光方法及び装置
JP2003037052A (ja) * 2001-07-26 2003-02-07 Canon Inc 投影光学系の収差測定手段を有する半導体露光装置
JP2003215423A (ja) * 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
JP3968320B2 (ja) 2003-04-18 2007-08-29 トヨタ自動車株式会社 車両用赤外線映像装置及びハイビームヘッドランプ構造
JP2004319937A (ja) * 2003-04-21 2004-11-11 Nikon Corp 計測方法、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法
US7158215B2 (en) * 2003-06-30 2007-01-02 Asml Holding N.V. Large field of view protection optical system with aberration correctability for flat panel displays
US7242475B2 (en) * 2004-03-25 2007-07-10 Asml Netherlands B.V. Method of determining aberration of a projection system of a lithographic apparatus
CN1312464C (zh) * 2004-04-29 2007-04-25 上海微电子装备有限公司 成像光学系统像差的现场测量方法
CN101174092B (zh) * 2006-10-30 2010-10-06 上海华虹Nec电子有限公司 用于监控镜头慧差导致成像畸变的方法及其透镜成像系统
CN101221372A (zh) * 2008-01-25 2008-07-16 中国科学院上海光学精密机械研究所 光刻机投影物镜偶像差原位检测系统及检测方法
CN101236362B (zh) * 2008-01-29 2010-06-23 北京理工大学 光刻机投影物镜波像差在线检测方法
CN101464637B (zh) * 2008-12-30 2011-03-30 上海微电子装备有限公司 光刻机投影物镜波像差测量装置及方法
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CN102681358B (zh) * 2012-04-18 2014-02-12 中国科学院上海光学精密机械研究所 基于空间像检测的投影物镜波像差原位测量方法

Also Published As

Publication number Publication date
TW201723678A (zh) 2017-07-01
CN106919004B (zh) 2019-11-26
KR102126232B1 (ko) 2020-06-24
JP2017116867A (ja) 2017-06-29
TWI643029B (zh) 2018-12-01
KR20170077041A (ko) 2017-07-05
CN106919004A (zh) 2017-07-04

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