KR102126232B1 - 평가 방법, 노광 방법, 및 물품의 제조 방법 - Google Patents

평가 방법, 노광 방법, 및 물품의 제조 방법 Download PDF

Info

Publication number
KR102126232B1
KR102126232B1 KR1020160172663A KR20160172663A KR102126232B1 KR 102126232 B1 KR102126232 B1 KR 102126232B1 KR 1020160172663 A KR1020160172663 A KR 1020160172663A KR 20160172663 A KR20160172663 A KR 20160172663A KR 102126232 B1 KR102126232 B1 KR 102126232B1
Authority
KR
South Korea
Prior art keywords
optical system
projection optical
information
value
evaluation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020160172663A
Other languages
English (en)
Korean (ko)
Other versions
KR20170077041A (ko
Inventor
도루 오쿠보
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20170077041A publication Critical patent/KR20170077041A/ko
Application granted granted Critical
Publication of KR102126232B1 publication Critical patent/KR102126232B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lens Barrels (AREA)
KR1020160172663A 2015-12-25 2016-12-16 평가 방법, 노광 방법, 및 물품의 제조 방법 Active KR102126232B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015254866A JP6661371B2 (ja) 2015-12-25 2015-12-25 評価方法、露光方法、および物品の製造方法
JPJP-P-2015-254866 2015-12-25

Publications (2)

Publication Number Publication Date
KR20170077041A KR20170077041A (ko) 2017-07-05
KR102126232B1 true KR102126232B1 (ko) 2020-06-24

Family

ID=59234097

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160172663A Active KR102126232B1 (ko) 2015-12-25 2016-12-16 평가 방법, 노광 방법, 및 물품의 제조 방법

Country Status (4)

Country Link
JP (1) JP6661371B2 (enExample)
KR (1) KR102126232B1 (enExample)
CN (1) CN106919004B (enExample)
TW (1) TWI643029B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6978926B2 (ja) * 2017-12-18 2021-12-08 キヤノン株式会社 計測方法、計測装置、露光装置、および物品製造方法
JP7105582B2 (ja) * 2018-03-09 2022-07-25 キヤノン株式会社 決定方法、露光方法、露光装置、物品の製造方法及びプログラム
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
WO2025149231A1 (en) * 2024-01-11 2025-07-17 Asml Netherlands B.V. Improvements to lithographic methods and apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002050506A1 (en) 2000-12-18 2002-06-27 Nikon Corporation Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatus for exposure
JP2003215423A (ja) 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
JP2004319397A (ja) 2003-04-18 2004-11-11 Toyota Motor Corp 車両用赤外線映像装置及びハイビームヘッドランプ構造

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH068926B2 (ja) * 1984-08-24 1994-02-02 キヤノン株式会社 面位置検出方法
JPH02157844A (ja) * 1988-12-12 1990-06-18 Nikon Corp 露光条件測定用マスク並びに該マスクを用いた露光条件測定方法及び装置
JP3013463B2 (ja) * 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
JPH10284414A (ja) * 1997-04-10 1998-10-23 Nikon Corp 結像位置検出装置及び半導体デバイスの製造方法
JPH11260703A (ja) * 1998-03-16 1999-09-24 Sony Corp 露光装置および露光装置の投影レンズの評価方法
JP4649717B2 (ja) * 1999-10-01 2011-03-16 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP2002022609A (ja) * 2000-07-10 2002-01-23 Canon Inc 投影露光装置
JP2003037052A (ja) * 2001-07-26 2003-02-07 Canon Inc 投影光学系の収差測定手段を有する半導体露光装置
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
JP2004319937A (ja) * 2003-04-21 2004-11-11 Nikon Corp 計測方法、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法
US7158215B2 (en) * 2003-06-30 2007-01-02 Asml Holding N.V. Large field of view protection optical system with aberration correctability for flat panel displays
US7242475B2 (en) * 2004-03-25 2007-07-10 Asml Netherlands B.V. Method of determining aberration of a projection system of a lithographic apparatus
CN1312464C (zh) * 2004-04-29 2007-04-25 上海微电子装备有限公司 成像光学系统像差的现场测量方法
CN101174092B (zh) * 2006-10-30 2010-10-06 上海华虹Nec电子有限公司 用于监控镜头慧差导致成像畸变的方法及其透镜成像系统
CN101221372A (zh) * 2008-01-25 2008-07-16 中国科学院上海光学精密机械研究所 光刻机投影物镜偶像差原位检测系统及检测方法
CN101236362B (zh) * 2008-01-29 2010-06-23 北京理工大学 光刻机投影物镜波像差在线检测方法
CN101464637B (zh) * 2008-12-30 2011-03-30 上海微电子装备有限公司 光刻机投影物镜波像差测量装置及方法
US8760624B2 (en) * 2010-07-16 2014-06-24 Rudolph Technologies, Inc. System and method for estimating field curvature
US8760625B2 (en) * 2010-07-30 2014-06-24 Asml Netherlands B.V. Lithographic apparatus, aberration detector and device manufacturing method
CN102681358B (zh) * 2012-04-18 2014-02-12 中国科学院上海光学精密机械研究所 基于空间像检测的投影物镜波像差原位测量方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002050506A1 (en) 2000-12-18 2002-06-27 Nikon Corporation Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatus for exposure
JP2003215423A (ja) 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
JP2004319397A (ja) 2003-04-18 2004-11-11 Toyota Motor Corp 車両用赤外線映像装置及びハイビームヘッドランプ構造

Also Published As

Publication number Publication date
TW201723678A (zh) 2017-07-01
CN106919004B (zh) 2019-11-26
JP2017116867A (ja) 2017-06-29
TWI643029B (zh) 2018-12-01
KR20170077041A (ko) 2017-07-05
CN106919004A (zh) 2017-07-04
JP6661371B2 (ja) 2020-03-11

Similar Documents

Publication Publication Date Title
JP3264368B2 (ja) 縮小投影型露光装置の調整方法
US10545413B2 (en) Evaluation method, exposure method, and method for manufacturing an article
KR102126232B1 (ko) 평가 방법, 노광 방법, 및 물품의 제조 방법
CN111338186B (zh) 决定方法、曝光方法、曝光装置以及物品制造方法
WO2011061928A1 (ja) 光学特性計測方法、露光方法及びデバイス製造方法
KR102127300B1 (ko) 반도체 리소그래피용 포토마스크의 임계 치수 균일도를 교정하기 위한 방법
JP2019204058A5 (enExample)
TW464946B (en) Method and apparatus for measuring positional shift/distortion by aberration
KR102396135B1 (ko) 계산 방법, 노광 방법, 기억 매체, 노광 장치 및 물품 제조 방법
US20090280418A1 (en) Exposure apparatus, correction method, and device manufacturing method
KR101320240B1 (ko) 파면수차 측정 장치, 노광 장치 및 디바이스 제조 방법
CN114063393A (zh) 调整方法、曝光方法、曝光装置以及物品制造方法
JP2009104024A (ja) 露光マスク、フォーカス測定方法及びパターン形成方法
CN110244518B (zh) 决定方法、曝光方法、装置、物品的制造方法及存储介质
US10871718B2 (en) Exposure apparatus, method for controlling the same and article manufacturing method
JP2019159029A5 (enExample)
CN109307987B (zh) 曝光装置和物品制造方法
JP7213757B2 (ja) 露光装置、および物品製造方法
JP2010147109A (ja) 評価方法、露光装置およびデバイス製造方法
US20070121093A1 (en) Method for measuring overlay error in exposure machine
US8956791B2 (en) Exposure tolerance estimation method and method for manufacturing semiconductor device
KR100922933B1 (ko) 반도체소자의 패턴 및 그것을 이용한 패턴 보정방법
JP2017090778A (ja) 露光方法及び物品の製造方法
TW202445260A (zh) 聚焦度量衡方法及相關度量衡裝置
JP5922927B2 (ja) 位置を求める方法、情報処理装置、リソグラフィ装置及び物品の製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20161216

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20180618

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20161216

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20191209

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20200403

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20200618

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20200619

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240527

Start annual number: 5

End annual number: 5