KR102126232B1 - 평가 방법, 노광 방법, 및 물품의 제조 방법 - Google Patents

평가 방법, 노광 방법, 및 물품의 제조 방법 Download PDF

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KR102126232B1
KR102126232B1 KR1020160172663A KR20160172663A KR102126232B1 KR 102126232 B1 KR102126232 B1 KR 102126232B1 KR 1020160172663 A KR1020160172663 A KR 1020160172663A KR 20160172663 A KR20160172663 A KR 20160172663A KR 102126232 B1 KR102126232 B1 KR 102126232B1
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optical system
projection optical
information
value
evaluation
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Korean (ko)
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KR20170077041A (ko
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도루 오쿠보
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lens Barrels (AREA)
KR1020160172663A 2015-12-25 2016-12-16 평가 방법, 노광 방법, 및 물품의 제조 방법 Active KR102126232B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015254866A JP6661371B2 (ja) 2015-12-25 2015-12-25 評価方法、露光方法、および物品の製造方法
JPJP-P-2015-254866 2015-12-25

Publications (2)

Publication Number Publication Date
KR20170077041A KR20170077041A (ko) 2017-07-05
KR102126232B1 true KR102126232B1 (ko) 2020-06-24

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Country Status (4)

Country Link
JP (1) JP6661371B2 (enExample)
KR (1) KR102126232B1 (enExample)
CN (1) CN106919004B (enExample)
TW (1) TWI643029B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6978926B2 (ja) * 2017-12-18 2021-12-08 キヤノン株式会社 計測方法、計測装置、露光装置、および物品製造方法
JP7105582B2 (ja) * 2018-03-09 2022-07-25 キヤノン株式会社 決定方法、露光方法、露光装置、物品の製造方法及びプログラム
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
CN122535859A (zh) * 2024-01-11 2026-08-07 Asml荷兰有限公司 对光刻方法和设备的改进

Citations (3)

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WO2002050506A1 (en) 2000-12-18 2002-06-27 Nikon Corporation Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatus for exposure
JP2003215423A (ja) 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
JP2004319397A (ja) 2003-04-18 2004-11-11 Toyota Motor Corp 車両用赤外線映像装置及びハイビームヘッドランプ構造

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JPH068926B2 (ja) * 1984-08-24 1994-02-02 キヤノン株式会社 面位置検出方法
JPH02157844A (ja) * 1988-12-12 1990-06-18 Nikon Corp 露光条件測定用マスク並びに該マスクを用いた露光条件測定方法及び装置
JP3013463B2 (ja) * 1991-02-01 2000-02-28 株式会社ニコン 焦点位置検出装置及び投影露光装置
JPH10284414A (ja) * 1997-04-10 1998-10-23 Nikon Corp 結像位置検出装置及び半導体デバイスの製造方法
JPH11260703A (ja) * 1998-03-16 1999-09-24 Sony Corp 露光装置および露光装置の投影レンズの評価方法
JP4649717B2 (ja) * 1999-10-01 2011-03-16 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP2002022609A (ja) * 2000-07-10 2002-01-23 Canon Inc 投影露光装置
JP2003037052A (ja) * 2001-07-26 2003-02-07 Canon Inc 投影光学系の収差測定手段を有する半導体露光装置
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
JP2004319937A (ja) * 2003-04-21 2004-11-11 Nikon Corp 計測方法、光学特性計測方法、露光装置の調整方法及び露光方法、並びにデバイス製造方法
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Publication number Priority date Publication date Assignee Title
WO2002050506A1 (en) 2000-12-18 2002-06-27 Nikon Corporation Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatus for exposure
JP2003215423A (ja) 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
JP2004319397A (ja) 2003-04-18 2004-11-11 Toyota Motor Corp 車両用赤外線映像装置及びハイビームヘッドランプ構造

Also Published As

Publication number Publication date
TWI643029B (zh) 2018-12-01
JP2017116867A (ja) 2017-06-29
JP6661371B2 (ja) 2020-03-11
TW201723678A (zh) 2017-07-01
KR20170077041A (ko) 2017-07-05
CN106919004A (zh) 2017-07-04
CN106919004B (zh) 2019-11-26

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