JP6661330B2 - Led基板の形成方法 - Google Patents
Led基板の形成方法 Download PDFInfo
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- JP6661330B2 JP6661330B2 JP2015210343A JP2015210343A JP6661330B2 JP 6661330 B2 JP6661330 B2 JP 6661330B2 JP 2015210343 A JP2015210343 A JP 2015210343A JP 2015210343 A JP2015210343 A JP 2015210343A JP 6661330 B2 JP6661330 B2 JP 6661330B2
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- silicon substrate
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- emitting layer
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- 239000000758 substrate Substances 0.000 title claims description 168
- 238000000034 method Methods 0.000 title claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 115
- 239000010703 silicon Substances 0.000 claims description 115
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 114
- 230000003014 reinforcing effect Effects 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000000407 epitaxy Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Description
11 凹部
12 環状補強部
20 バッファ層
30 発光層
31 n−GaN層
32 活性層
33 p−GaN層
40 反射膜
51 n型電極(電極)
52 p型電極(電極)
C チップ
Claims (3)
- シリコン基板の一方の面にバッファ層を形成するバッファ層形成工程と、
該バッファ層形成工程で形成したバッファ層の表面に発光層を形成する発光層形成工程と、
該発光層形成工程の後、シリコン基板の他方の面の中央を研削し凹部を形成することにより該凹部の外側に環状補強部を形成する環状補強部形成工程と、
該環状補強部形成工程の後、該凹部の底面に反射膜を形成することによって該反射膜と該シリコン基板とに熱歪みによる反りが生じて該シリコン基板が割れないように該環状補強部により該シリコン基板の反りを抑えた状態で該凹部の底面に該反射膜を形成する反射膜形成工程と、
該反射膜形成工程で形成された該反射膜の表面に電極を形成する電極形成工程と、
該電極形成工程の後、分割予定ラインに沿って個々のチップに分割する分割工程と、
を有するLED基板の形成方法。 - 該電極形成工程において、該電極は、該反射膜を貫通して該発光層に直に接続されるように形成されることを特徴とする請求項1に記載のLED基板の形成方法。
- 該分割工程において、該電極又は該発光層を上方に向けた状態で該シリコン基板をチャックテーブルに保持させ、該電極側又は該発光層側からダイシングすることを特徴とする請求項1又は請求項2に記載のLED基板の形成方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015210343A JP6661330B2 (ja) | 2015-10-27 | 2015-10-27 | Led基板の形成方法 |
TW105131081A TWI699009B (zh) | 2015-10-27 | 2016-09-26 | Led基板之形成方法 |
CN201610916336.1A CN106952985B (zh) | 2015-10-27 | 2016-10-20 | Led基板的形成方法 |
KR1020160138159A KR102397159B1 (ko) | 2015-10-27 | 2016-10-24 | Led 기판의 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015210343A JP6661330B2 (ja) | 2015-10-27 | 2015-10-27 | Led基板の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017084919A JP2017084919A (ja) | 2017-05-18 |
JP6661330B2 true JP6661330B2 (ja) | 2020-03-11 |
Family
ID=58711107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015210343A Active JP6661330B2 (ja) | 2015-10-27 | 2015-10-27 | Led基板の形成方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6661330B2 (ja) |
KR (1) | KR102397159B1 (ja) |
CN (1) | CN106952985B (ja) |
TW (1) | TWI699009B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI645454B (zh) * | 2017-03-31 | 2018-12-21 | 環球晶圓股份有限公司 | 磊晶基板及其製造方法 |
CN108666212B (zh) * | 2018-05-02 | 2023-01-10 | 南方科技大学 | 一种led芯片制作方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS55102428A (en) | 1979-01-31 | 1980-08-05 | Mitsubishi Chem Ind Ltd | Mixing and forwarding device for pulverulent and granular body and liquid |
JPS55118328A (en) | 1979-03-06 | 1980-09-11 | Tokutarou Komuro | Combination net for set net |
JPH08148714A (ja) * | 1994-11-25 | 1996-06-07 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
JPH09116192A (ja) | 1995-10-16 | 1997-05-02 | Toshiba Corp | 発光ダイオード |
US6069394A (en) * | 1997-04-09 | 2000-05-30 | Matsushita Electronics Corporation | Semiconductor substrate, semiconductor device and method of manufacturing the same |
US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
KR100499129B1 (ko) * | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
JP2005019608A (ja) * | 2003-06-25 | 2005-01-20 | Matsushita Electric Works Ltd | 半導体発光素子 |
JP4386185B2 (ja) * | 2004-07-28 | 2009-12-16 | サンケン電気株式会社 | 窒化物半導体装置 |
JP4890813B2 (ja) * | 2005-08-05 | 2012-03-07 | 昭和電工株式会社 | 発光ダイオード及び発光ダイオードランプ |
JP2007266250A (ja) * | 2006-03-28 | 2007-10-11 | Disco Abrasive Syst Ltd | ウエーハ |
JP2009064801A (ja) * | 2007-09-04 | 2009-03-26 | Disco Abrasive Syst Ltd | ウエーハ |
CN100544045C (zh) * | 2007-09-17 | 2009-09-23 | 中山大学 | 一种半导体发光器件及其制造方法 |
US20110198609A1 (en) * | 2010-02-12 | 2011-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-Emitting Devices with Through-Substrate Via Connections |
CN105742447B (zh) * | 2010-11-18 | 2019-03-26 | 首尔伟傲世有限公司 | 具有电极焊盘的发光二极管 |
EP2495772A1 (en) * | 2011-03-02 | 2012-09-05 | Azzurro Semiconductors AG | Semiconductor light emitter device |
JP2012238746A (ja) * | 2011-05-12 | 2012-12-06 | Disco Abrasive Syst Ltd | 光デバイスウエーハの分割方法 |
JP5023230B1 (ja) | 2011-05-16 | 2012-09-12 | 株式会社東芝 | 窒化物半導体素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法 |
JP2012253304A (ja) * | 2011-06-07 | 2012-12-20 | Toshiba Corp | 窒化物半導体発光素子の製造方法 |
TWI443871B (zh) * | 2011-06-21 | 2014-07-01 | Univ Chang Gung | Fabrication method of gallium nitride light emitting diode with back reflector and heat dissipation layer |
CN102583215A (zh) * | 2011-12-26 | 2012-07-18 | 南京邮电大学 | 基于硅衬底氮化物的悬空纳米光子器件及其制备方法 |
JP6105395B2 (ja) * | 2013-06-05 | 2017-03-29 | 株式会社ディスコ | 加工方法 |
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2015
- 2015-10-27 JP JP2015210343A patent/JP6661330B2/ja active Active
-
2016
- 2016-09-26 TW TW105131081A patent/TWI699009B/zh active
- 2016-10-20 CN CN201610916336.1A patent/CN106952985B/zh active Active
- 2016-10-24 KR KR1020160138159A patent/KR102397159B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TWI699009B (zh) | 2020-07-11 |
JP2017084919A (ja) | 2017-05-18 |
CN106952985A (zh) | 2017-07-14 |
KR102397159B1 (ko) | 2022-05-11 |
TW201724555A (zh) | 2017-07-01 |
KR20170049405A (ko) | 2017-05-10 |
CN106952985B (zh) | 2021-03-26 |
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