JP6661262B2 - 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 - Google Patents
位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 Download PDFInfo
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- JP6661262B2 JP6661262B2 JP2014110982A JP2014110982A JP6661262B2 JP 6661262 B2 JP6661262 B2 JP 6661262B2 JP 2014110982 A JP2014110982 A JP 2014110982A JP 2014110982 A JP2014110982 A JP 2014110982A JP 6661262 B2 JP6661262 B2 JP 6661262B2
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- phase shift
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- shift mask
- gas
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- 230000010363 phase shift Effects 0.000 title claims description 771
- 238000004519 manufacturing process Methods 0.000 title claims description 106
- 238000000034 method Methods 0.000 title claims description 90
- 239000007789 gas Substances 0.000 claims description 275
- 239000010410 layer Substances 0.000 claims description 230
- 239000000758 substrate Substances 0.000 claims description 190
- 239000011651 chromium Substances 0.000 claims description 141
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 130
- 229910052804 chromium Inorganic materials 0.000 claims description 130
- 238000004544 sputter deposition Methods 0.000 claims description 123
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 92
- 239000000463 material Substances 0.000 claims description 72
- 229910052760 oxygen Inorganic materials 0.000 claims description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims description 47
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 46
- 239000001301 oxygen Substances 0.000 claims description 46
- 239000002344 surface layer Substances 0.000 claims description 41
- 239000011261 inert gas Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 34
- 238000001039 wet etching Methods 0.000 claims description 31
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 238000005546 reactive sputtering Methods 0.000 claims description 16
- 238000005477 sputtering target Methods 0.000 claims description 15
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 239000001569 carbon dioxide Substances 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000010301 surface-oxidation reaction Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 791
- 230000000052 comparative effect Effects 0.000 description 111
- 230000000694 effects Effects 0.000 description 52
- 239000002356 single layer Substances 0.000 description 35
- 238000005530 etching Methods 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 30
- 238000005755 formation reaction Methods 0.000 description 30
- 230000008569 process Effects 0.000 description 29
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 238000000059 patterning Methods 0.000 description 27
- 238000011144 upstream manufacturing Methods 0.000 description 27
- 238000002834 transmittance Methods 0.000 description 24
- 238000004140 cleaning Methods 0.000 description 22
- 229910021332 silicide Inorganic materials 0.000 description 20
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 18
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 18
- 230000008859 change Effects 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 16
- 229910002091 carbon monoxide Inorganic materials 0.000 description 16
- 230000007423 decrease Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 11
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 10
- 238000000560 X-ray reflectometry Methods 0.000 description 10
- 230000001747 exhibiting effect Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000002360 preparation method Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 8
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 8
- 238000011068 loading method Methods 0.000 description 8
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 8
- 238000000985 reflectance spectrum Methods 0.000 description 8
- 238000005121 nitriding Methods 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 229910052724 xenon Inorganic materials 0.000 description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 7
- 102100036738 Guanine nucleotide-binding protein subunit alpha-11 Human genes 0.000 description 6
- 101100283445 Homo sapiens GNA11 gene Proteins 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052743 krypton Inorganic materials 0.000 description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- UFGZSIPAQKLCGR-UHFFFAOYSA-N chromium carbide Chemical compound [Cr]#C[Cr]C#[Cr] UFGZSIPAQKLCGR-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 4
- 239000001272 nitrous oxide Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- -1 silicide nitride Chemical class 0.000 description 4
- 229910003470 tongbaite Inorganic materials 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 description 3
- 150000001845 chromium compounds Chemical class 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 2
- 239000001273 butane Substances 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000002407 reforming Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 229910021563 chromium fluoride Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000000051 modifying effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Physical Vapour Deposition (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014110982A JP6661262B2 (ja) | 2014-05-29 | 2014-05-29 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
| KR1020150065849A KR102339725B1 (ko) | 2014-05-29 | 2015-05-12 | 위상 시프트 마스크 블랭크 및 그 제조 방법과 위상 시프트 마스크의 제조 방법 |
| TW104115294A TWI651584B (zh) | 2014-05-29 | 2015-05-13 | 相位偏移光罩基底及其製造方法、與相位偏移光罩之製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014110982A JP6661262B2 (ja) | 2014-05-29 | 2014-05-29 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015225280A JP2015225280A (ja) | 2015-12-14 |
| JP2015225280A5 JP2015225280A5 (enExample) | 2017-03-23 |
| JP6661262B2 true JP6661262B2 (ja) | 2020-03-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014110982A Active JP6661262B2 (ja) | 2014-05-29 | 2014-05-29 | 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6661262B2 (enExample) |
| KR (1) | KR102339725B1 (enExample) |
| TW (1) | TWI651584B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6743679B2 (ja) * | 2016-03-02 | 2020-08-19 | 信越化学工業株式会社 | フォトマスクブランク、及びフォトマスクの製造方法 |
| JP6573591B2 (ja) * | 2016-09-13 | 2019-09-11 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法 |
| JP6812236B2 (ja) * | 2016-12-27 | 2021-01-13 | Hoya株式会社 | 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP6999460B2 (ja) * | 2018-03-23 | 2022-01-18 | Hoya株式会社 | 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法 |
| JP2020034666A (ja) | 2018-08-29 | 2020-03-05 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| JP7217620B2 (ja) * | 2018-11-22 | 2023-02-03 | アルバック成膜株式会社 | マスクブランクスおよびマスク |
| JP7297692B2 (ja) * | 2019-02-28 | 2023-06-26 | Hoya株式会社 | フォトマスクブランク、フォトマスクの製造方法、および表示装置の製造方法 |
| JP2021170128A (ja) * | 2019-10-01 | 2021-10-28 | 信越化学工業株式会社 | ハーフトーン位相シフト型フォトマスクブランク及びハーフトーン位相シフト型フォトマスク |
| JP7346527B2 (ja) * | 2021-11-25 | 2023-09-19 | Hoya株式会社 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3312702B2 (ja) | 1993-04-09 | 2002-08-12 | 大日本印刷株式会社 | 位相シフトフォトマスク及び位相シフトフォトマスク用ブランクス |
| JP3262302B2 (ja) | 1993-04-09 | 2002-03-04 | 大日本印刷株式会社 | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
| JP3115185B2 (ja) * | 1993-05-25 | 2000-12-04 | 株式会社東芝 | 露光用マスクとパターン形成方法 |
| US5514499A (en) * | 1993-05-25 | 1996-05-07 | Kabushiki Kaisha Toshiba | Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same |
| JP3256345B2 (ja) * | 1993-07-26 | 2002-02-12 | アルバック成膜株式会社 | フォトマスクブランクスおよびフォトマスク |
| JP3286103B2 (ja) * | 1995-02-15 | 2002-05-27 | 株式会社東芝 | 露光用マスクの製造方法及び製造装置 |
| JP2996613B2 (ja) * | 1995-12-27 | 2000-01-11 | ホーヤ株式会社 | 位相シフトマスクブランク及び位相シフトマスクの製造方法 |
| JPH11258772A (ja) * | 1998-03-16 | 1999-09-24 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク |
| JP2002244274A (ja) * | 2001-02-13 | 2002-08-30 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
| JP2004354640A (ja) * | 2003-05-28 | 2004-12-16 | Nikon Corp | 光学薄膜の緻密化処理方法、光学薄膜及び半導体露光装置 |
| TWI409580B (zh) | 2008-06-27 | 2013-09-21 | S&S Tech Co Ltd | 空白光罩、光罩及其製造方法 |
| KR100948770B1 (ko) * | 2008-06-27 | 2010-03-24 | 주식회사 에스앤에스텍 | 블랭크 마스크, 포토마스크 및 이의 제조 방법 |
| JP5272568B2 (ja) * | 2008-08-06 | 2013-08-28 | 大日本印刷株式会社 | ハーフトーン型位相シフトマスクの製造方法 |
| JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
| KR101282040B1 (ko) * | 2012-07-26 | 2013-07-04 | 주식회사 에스앤에스텍 | 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크 |
| JP6324756B2 (ja) * | 2013-03-19 | 2018-05-16 | Hoya株式会社 | 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法 |
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| KR20150138006A (ko) | 2015-12-09 |
| TW201608329A (zh) | 2016-03-01 |
| TWI651584B (zh) | 2019-02-21 |
| JP2015225280A (ja) | 2015-12-14 |
| KR102339725B1 (ko) | 2021-12-16 |
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