KR102339725B1 - 위상 시프트 마스크 블랭크 및 그 제조 방법과 위상 시프트 마스크의 제조 방법 - Google Patents

위상 시프트 마스크 블랭크 및 그 제조 방법과 위상 시프트 마스크의 제조 방법 Download PDF

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KR102339725B1
KR102339725B1 KR1020150065849A KR20150065849A KR102339725B1 KR 102339725 B1 KR102339725 B1 KR 102339725B1 KR 1020150065849 A KR1020150065849 A KR 1020150065849A KR 20150065849 A KR20150065849 A KR 20150065849A KR 102339725 B1 KR102339725 B1 KR 102339725B1
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phase shift
film
shift mask
shift film
mask blank
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Korean (ko)
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KR20150138006A (ko
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세이지 쯔보이
노리유끼 사까야
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
KR1020150065849A 2014-05-29 2015-05-12 위상 시프트 마스크 블랭크 및 그 제조 방법과 위상 시프트 마스크의 제조 방법 Active KR102339725B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014110982A JP6661262B2 (ja) 2014-05-29 2014-05-29 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JPJP-P-2014-110982 2014-05-29

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KR20150138006A KR20150138006A (ko) 2015-12-09
KR102339725B1 true KR102339725B1 (ko) 2021-12-16

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JP (1) JP6661262B2 (enExample)
KR (1) KR102339725B1 (enExample)
TW (1) TWI651584B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP6573591B2 (ja) * 2016-09-13 2019-09-11 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6812236B2 (ja) * 2016-12-27 2021-01-13 Hoya株式会社 位相シフトマスクブランク及びこれを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP6999460B2 (ja) * 2018-03-23 2022-01-18 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク中間体及びこれらを用いた位相シフトマスクの製造方法、並びに表示装置の製造方法
JP2020034666A (ja) * 2018-08-29 2020-03-05 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP7217620B2 (ja) * 2018-11-22 2023-02-03 アルバック成膜株式会社 マスクブランクスおよびマスク
JP7297692B2 (ja) * 2019-02-28 2023-06-26 Hoya株式会社 フォトマスクブランク、フォトマスクの製造方法、および表示装置の製造方法
JP2021170128A (ja) * 2019-10-01 2021-10-28 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びハーフトーン位相シフト型フォトマスク
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
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JP2010009001A (ja) 2008-06-27 2010-01-14 S & S Tech Co Ltd ブランクマスク、フォトマスク及びその製造方法
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크

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JP3312702B2 (ja) 1993-04-09 2002-08-12 大日本印刷株式会社 位相シフトフォトマスク及び位相シフトフォトマスク用ブランクス
JP3262302B2 (ja) 1993-04-09 2002-03-04 大日本印刷株式会社 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
KR0168134B1 (ko) * 1993-05-25 1999-01-15 사토 후미오 반사형 위상쉬프트 마스크와, 투과형 위상쉬프트 마스크 및, 패턴형성방법
JP3115185B2 (ja) * 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JP3256345B2 (ja) * 1993-07-26 2002-02-12 アルバック成膜株式会社 フォトマスクブランクスおよびフォトマスク
JP3286103B2 (ja) * 1995-02-15 2002-05-27 株式会社東芝 露光用マスクの製造方法及び製造装置
JP2996613B2 (ja) * 1995-12-27 2000-01-11 ホーヤ株式会社 位相シフトマスクブランク及び位相シフトマスクの製造方法
JPH11258772A (ja) * 1998-03-16 1999-09-24 Toppan Printing Co Ltd ハーフトーン型位相シフトマスク用ブランクス及びハーフトーン型位相シフトマスク
JP2002244274A (ja) * 2001-02-13 2002-08-30 Shin Etsu Chem Co Ltd フォトマスクブランク、フォトマスク及びこれらの製造方法
JP2004354640A (ja) * 2003-05-28 2004-12-16 Nikon Corp 光学薄膜の緻密化処理方法、光学薄膜及び半導体露光装置
KR100948770B1 (ko) * 2008-06-27 2010-03-24 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 이의 제조 방법
JP5272568B2 (ja) * 2008-08-06 2013-08-28 大日本印刷株式会社 ハーフトーン型位相シフトマスクの製造方法
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP6324756B2 (ja) * 2013-03-19 2018-05-16 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010009001A (ja) 2008-06-27 2010-01-14 S & S Tech Co Ltd ブランクマスク、フォトマスク及びその製造方法
KR101282040B1 (ko) * 2012-07-26 2013-07-04 주식회사 에스앤에스텍 플랫 패널 디스플레이용 위상반전 블랭크 마스크 및 포토 마스크

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KR20150138006A (ko) 2015-12-09
TWI651584B (zh) 2019-02-21
JP6661262B2 (ja) 2020-03-11
TW201608329A (zh) 2016-03-01
JP2015225280A (ja) 2015-12-14

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