JP6648838B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6648838B2 JP6648838B2 JP2018551627A JP2018551627A JP6648838B2 JP 6648838 B2 JP6648838 B2 JP 6648838B2 JP 2018551627 A JP2018551627 A JP 2018551627A JP 2018551627 A JP2018551627 A JP 2018551627A JP 6648838 B2 JP6648838 B2 JP 6648838B2
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特開2007−311627号公報
本例では上方蓄積領域62が1層、中間蓄積領域64が1層、下方蓄積領域66が1層設けられるが、各蓄積領域の層数はこれに限らない。たとえば、中間蓄積領域64または下方蓄積領域66のどちらかと上方蓄積領域62との2層の蓄積領域が設けられてもよい。また、上方蓄積領域62、中間蓄積領域64および下方蓄積領域66のうち少なくとも1つの蓄積領域が複数層設けられてもよい。
Claims (12)
- 第1導電型のドリフト領域を有する半導体基板と、
前記半導体基板の内部において前記ドリフト領域の上方に設けられ、前記ドリフト領域の第1導電型のドーピング濃度よりも高い第1導電型のドーピング濃度を有するエミッタ領域と、
前記半導体基板の内部において前記エミッタ領域と前記ドリフト領域との間に設けられた第2導電型のベース領域と、
前記半導体基板の上面から前記エミッタ領域および前記ベース領域を貫通して前記ドリフト領域まで設けられ、それぞれ内部に導電部を有する、ゲートトレンチ部およびダミートレンチ部と、
前記ベース領域の下方、かつ、前記ゲートトレンチ部と前記ダミートレンチ部との間において、前記半導体基板の前記上面から下面に向かう深さ方向に並んで設けられ、前記ドリフト領域の第1導電型のドーピング濃度よりも高い第1導電型のドーピング濃度を有する領域を各々含む、複数の蓄積領域と、
を備え、
前記複数の蓄積領域のうち前記半導体基板の前記上面に最も近い上方蓄積領域は、前記半導体基板の上面視において前記ゲートトレンチ部および前記ダミートレンチ部の長手部分が延伸する方向である延伸方向と前記深さ方向とに直交する前記ゲートトレンチ部および前記ダミートレンチ部の配列方向において、前記ゲートトレンチ部および前記ダミートレンチ部に直接接し、
前記複数の蓄積領域のうち前記半導体基板の前記上面から最も遠い下方蓄積領域は、
前記配列方向において前記ダミートレンチ部よりも前記ゲートトレンチ部に近いゲート近傍領域と、
前記配列方向において前記ゲートトレンチ部よりも前記ダミートレンチ部に近く、前記ゲート近傍領域よりも低い第1導電型のドーピング濃度を有するダミー近傍領域と
を有する
半導体装置。 - 前記ダミー近傍領域は、前記ドリフト領域における第1導電型のドーピング濃度と同じ第1導電型のドーピング濃度を有する
請求項1に記載の半導体装置。 - 前記ダミー近傍領域は、前記ドリフト領域における第1導電型のドーピング濃度よりも大きく、かつ、前記ゲート近傍領域の前記深さ方向における第1導電型のドーピング濃度のピーク濃度よりも小さい第1導電型のドーピング濃度を有する
請求項1に記載の半導体装置。 - 前記複数の蓄積領域は、前記上方蓄積領域と前記下方蓄積領域との間に位置する中間蓄積領域を有し、
前記中間蓄積領域は、
前記配列方向において前記ダミートレンチ部よりも前記ゲートトレンチ部に近いゲート近傍領域と、
前記配列方向において前記ゲートトレンチ部よりも前記ダミートレンチ部に近いダミー近傍領域と
を有し、
前記中間蓄積領域において、
前記ゲート近傍領域における第1導電型のドーピング濃度は、前記ダミー近傍領域における第1導電型のドーピング濃度よりも大きく、
前記ゲート近傍領域における配列方向の長さは、前記下方蓄積領域の前記ゲート近傍領域における配列方向の長さよりも短い
請求項1から3のいずれか一項に記載の半導体装置。 - 前記複数の蓄積領域は、前記上方蓄積領域と前記下方蓄積領域との間に位置する中間蓄積領域を有し、
前記中間蓄積領域は、
前記配列方向において前記ダミートレンチ部よりも前記ゲートトレンチ部に近いゲート近傍領域と、
前記配列方向において前記ゲートトレンチ部よりも前記ダミートレンチ部に近いダミー近傍領域と
を有し、
前記中間蓄積領域の前記ゲート近傍領域における第1導電型のドーピング濃度は、前記下方蓄積領域の前記ゲート近傍領域における第1導電型のドーピング濃度よりも低い
請求項1から4のいずれか一項に記載の半導体装置。 - 前記配列方向における前記ゲートトレンチ部と前記ダミートレンチ部との間の長さをWmとし、
前記中間蓄積領域の前記ゲート近傍領域の前記配列方向における長さをWaとした場合に、
WmおよびWaは、0.55≦Wa/Wm≦0.95を満たす
請求項4または5に記載の半導体装置。 - 前記下方蓄積領域は、前記深さ方向において前記ゲートトレンチ部の下端近傍に位置する
請求項1から6のいずれか一項に記載の半導体装置。 - 半導体装置の製造方法であって、
第1導電型のドリフト領域を有する半導体基板に、ゲートトレンチ部とダミートレンチ部とを含むトレンチ部を形成する段階と、
前記半導体基板の上面に最も近い上方蓄積領域を形成するべく、前記半導体基板の前記上面から前記ゲートトレンチ部および前記ダミートレンチ部を含むトランジスタ部の全体に第1導電型の不純物をイオン注入する段階と、
前記半導体基板の前記上面から最も遠い下方蓄積領域を少なくとも形成するべく、前記トランジスタ部において前記ダミートレンチ部の上方にマスク材料を設けた状態において第1導電型の不純物をイオン注入する段階と
を備え、
前記上方蓄積領域は、前記半導体基板の上面視において前記ゲートトレンチ部および前記ダミートレンチ部の長手部分が延伸する方向である延伸方向と前記半導体基板の前記上面から下面に向かう深さ方向とに直交する前記ゲートトレンチ部および前記ダミートレンチ部の配列方向において、前記ゲートトレンチ部および前記ダミートレンチ部に直接接し、
前記下方蓄積領域は、
前記配列方向において前記ダミートレンチ部よりも前記ゲートトレンチ部に近いゲート近傍領域と、
前記配列方向において前記ゲートトレンチ部よりも前記ダミートレンチ部に近く、前記ゲート近傍領域よりも低い第1導電型のドーピング濃度を有するダミー近傍領域と
を有する
半導体装置の製造方法。 - 前記トランジスタ部において前記ダミートレンチ部の上方に前記マスク材料を設けた状態において前記第1導電型の不純物をイオン注入する段階は、前記上方蓄積領域と前記下方蓄積領域との間に位置する中間蓄積領域を形成することを含む
請求項8に記載の半導体装置の製造方法。 - 前記第1導電型の不純物はリンまたはプロトンである
請求項8または9に記載の半導体装置の製造方法。 - 前記下方蓄積領域の前記ゲート近傍領域および前記ダミー近傍領域のそれぞれは、前記配列方向における前記ドーピング濃度が均一な領域を有し、前記ゲート近傍領域および前記ダミー近傍領域の境界において前記ドーピング濃度がステップ状に変化している
請求項1から7のいずれか一項に記載の半導体装置。 - 前記下方蓄積領域の前記ダミー近傍領域は、前記配列方向において、前記ダミートレンチ部に向かって前記ドーピング濃度が徐々に減少する領域を有する
請求項1から7のいずれか一項に記載の半導体装置。
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