JP6646978B2 - 高アスペクト比構造におけるコンタクト洗浄 - Google Patents
高アスペクト比構造におけるコンタクト洗浄 Download PDFInfo
- Publication number
- JP6646978B2 JP6646978B2 JP2015167336A JP2015167336A JP6646978B2 JP 6646978 B2 JP6646978 B2 JP 6646978B2 JP 2015167336 A JP2015167336 A JP 2015167336A JP 2015167336 A JP2015167336 A JP 2015167336A JP 6646978 B2 JP6646978 B2 JP 6646978B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- aspect ratio
- silicon
- high aspect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H10P50/283—
-
- H10P70/234—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H10P50/267—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462044117P | 2014-08-29 | 2014-08-29 | |
| US62/044,117 | 2014-08-29 | ||
| US14/577,977 | 2014-12-19 | ||
| US14/577,977 US9558928B2 (en) | 2014-08-29 | 2014-12-19 | Contact clean in high-aspect ratio structures |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016051900A JP2016051900A (ja) | 2016-04-11 |
| JP2016051900A5 JP2016051900A5 (enExample) | 2018-10-04 |
| JP6646978B2 true JP6646978B2 (ja) | 2020-02-14 |
Family
ID=55403306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015167336A Active JP6646978B2 (ja) | 2014-08-29 | 2015-08-27 | 高アスペクト比構造におけるコンタクト洗浄 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9558928B2 (enExample) |
| JP (1) | JP6646978B2 (enExample) |
| KR (1) | KR102402866B1 (enExample) |
| CN (1) | CN105390389B (enExample) |
| TW (1) | TWI673791B (enExample) |
Families Citing this family (113)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US10283615B2 (en) | 2012-07-02 | 2019-05-07 | Novellus Systems, Inc. | Ultrahigh selective polysilicon etch with high throughput |
| US8916477B2 (en) * | 2012-07-02 | 2014-12-23 | Novellus Systems, Inc. | Polysilicon etch with high selectivity |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9576788B2 (en) * | 2015-04-24 | 2017-02-21 | Applied Materials, Inc. | Cleaning high aspect ratio vias |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US9620376B2 (en) | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10861693B2 (en) * | 2015-12-18 | 2020-12-08 | Applied Materials, Inc. | Cleaning method |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9960049B2 (en) | 2016-05-23 | 2018-05-01 | Applied Materials, Inc. | Two-step fluorine radical etch of hafnium oxide |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US9947558B2 (en) * | 2016-08-12 | 2018-04-17 | Lam Research Corporation | Method for conditioning silicon part |
| US10629473B2 (en) * | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10062575B2 (en) * | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US10504717B2 (en) * | 2016-09-16 | 2019-12-10 | Applied Materials, Inc. | Integrated system and method for source/drain engineering |
| JP6745887B2 (ja) * | 2016-09-23 | 2020-08-26 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US9997366B2 (en) * | 2016-10-19 | 2018-06-12 | Lam Research Corporation | Silicon oxide silicon nitride stack ion-assisted etch |
| CN107978604B (zh) * | 2016-10-24 | 2020-04-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法、电子装置 |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| US10692724B2 (en) * | 2016-12-23 | 2020-06-23 | Lam Research Corporation | Atomic layer etching methods and apparatus |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| US10586696B2 (en) | 2017-05-12 | 2020-03-10 | Applied Materials, Inc. | Halogen abatement for high aspect ratio channel device damage layer removal for EPI growth |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US10497579B2 (en) * | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US11065654B2 (en) * | 2017-07-17 | 2021-07-20 | Lam Research Corporation | In situ vapor deposition polymerization to form polymers as precursors to viscoelastic fluids for particle removal from substrates |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| CN107611007A (zh) * | 2017-08-24 | 2018-01-19 | 长江存储科技有限责任公司 | 一种深沟槽的预清洗方法及3d nand制备工艺 |
| US10544519B2 (en) * | 2017-08-25 | 2020-01-28 | Aixtron Se | Method and apparatus for surface preparation prior to epitaxial deposition |
| CN107731843A (zh) * | 2017-08-29 | 2018-02-23 | 长江存储科技有限责任公司 | 一种提高seg生长高度均一性方法 |
| CN107731825A (zh) * | 2017-08-29 | 2018-02-23 | 长江存储科技有限责任公司 | 一种降低3d nand闪存制备中热负载方法 |
| CN107731841A (zh) * | 2017-08-29 | 2018-02-23 | 长江存储科技有限责任公司 | 一种改善3d nand闪存seg生长质量的方法 |
| US10128086B1 (en) * | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10283324B1 (en) * | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10424487B2 (en) | 2017-10-24 | 2019-09-24 | Applied Materials, Inc. | Atomic layer etching processes |
| CN107968040A (zh) * | 2017-11-21 | 2018-04-27 | 长江存储科技有限责任公司 | 一种提高硅外延生长均匀性的工艺 |
| US11262340B2 (en) * | 2017-12-01 | 2022-03-01 | Mks Instruments, Inc. | Multi-sensor gas sampling detection system for radical gases and short-lived molecules and method of use |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| JP7399863B2 (ja) | 2018-02-05 | 2023-12-18 | ラム リサーチ コーポレーション | アモルファスカーボン層の開孔プロセス |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| WO2020028119A1 (en) * | 2018-07-31 | 2020-02-06 | Lam Research Corporation | Non-selective and selective etching through alternating layers of materials |
| CN109166857A (zh) * | 2018-09-03 | 2019-01-08 | 长江存储科技有限责任公司 | 半导体结构及其形成方法 |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| CN109216372B (zh) * | 2018-09-19 | 2021-03-30 | 长江存储科技有限责任公司 | 半导体结构的形成方法 |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| CN109346470A (zh) * | 2018-11-12 | 2019-02-15 | 长江存储科技有限责任公司 | 三维存储器及其形成方法 |
| US11437242B2 (en) * | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| CN111696863B (zh) * | 2019-03-15 | 2024-04-12 | 北京北方华创微电子装备有限公司 | 硅介质材料刻蚀方法 |
| KR102851427B1 (ko) * | 2019-10-07 | 2025-08-28 | 주식회사 테스 | 기판 처리 방법 |
| KR102523367B1 (ko) * | 2020-02-13 | 2023-04-21 | 세메스 주식회사 | 실리콘 구조물 표면 러프니스 개선 방법 및 기판 처리 장치 |
| US11587789B2 (en) * | 2020-03-06 | 2023-02-21 | Applied Materials, Inc. | System and method for radical and thermal processing of substrates |
| CN115668462A (zh) | 2020-03-31 | 2023-01-31 | 朗姆研究公司 | 用氯进行高深宽比电介质蚀刻 |
| KR20220041358A (ko) * | 2020-09-25 | 2022-04-01 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
| KR102559095B1 (ko) * | 2020-11-11 | 2023-07-25 | 주식회사 테스 | 기판 처리 방법 |
| KR102603741B1 (ko) * | 2021-10-21 | 2023-11-17 | 주식회사 원익큐엔씨 | 불화 대상물의 불화 가공 방법 및 이에 의해 불화 가공된 부품 |
| US12278110B2 (en) | 2022-01-10 | 2025-04-15 | Applied Materials, Inc. | Bias voltage modulation approach for SiO/SiN layer alternating etch process |
| US12268026B2 (en) | 2022-03-29 | 2025-04-01 | International Business Machines Corporation | High aspect ratio contact structure with multiple metal stacks |
| WO2025216868A1 (en) * | 2024-04-10 | 2025-10-16 | Lam Research Corporation | Silicon oxide etch with nitrogen containing etch component |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5505816A (en) | 1993-12-16 | 1996-04-09 | International Business Machines Corporation | Etching of silicon dioxide selectively to silicon nitride and polysilicon |
| JP4395896B2 (ja) * | 1998-03-10 | 2010-01-13 | ソニー株式会社 | 半導体装置の製造方法 |
| KR100322545B1 (ko) * | 1999-02-10 | 2002-03-18 | 윤종용 | 건식 세정 공정을 전 공정으로 이용하는 반도체 장치의콘택홀 채움 방법 |
| EP1077475A3 (en) | 1999-08-11 | 2003-04-02 | Applied Materials, Inc. | Method of micromachining a multi-part cavity |
| US6313042B1 (en) * | 1999-09-03 | 2001-11-06 | Applied Materials, Inc. | Cleaning contact with successive fluorine and hydrogen plasmas |
| KR100316721B1 (ko) | 2000-01-29 | 2001-12-12 | 윤종용 | 실리사이드막을 구비한 반도체소자의 제조방법 |
| US6544838B2 (en) * | 2001-03-13 | 2003-04-08 | Infineon Technologies Ag | Method of deep trench formation with improved profile control and surface area |
| JP2003309083A (ja) * | 2002-04-16 | 2003-10-31 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
| US20050230350A1 (en) | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
| US7959819B2 (en) * | 2004-06-29 | 2011-06-14 | Shouliang Lai | Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes |
| US20070202700A1 (en) * | 2006-02-27 | 2007-08-30 | Applied Materials, Inc. | Etch methods to form anisotropic features for high aspect ratio applications |
| KR20080061930A (ko) * | 2006-12-28 | 2008-07-03 | 주식회사 하이닉스반도체 | 낸드 플래쉬 메모리소자의 고전압 트랜지스터 제조방법 |
| CN101903989B (zh) * | 2007-12-21 | 2013-04-17 | 朗姆研究公司 | 硅结构的制造和带有形貌控制的深硅蚀刻 |
| US8883650B2 (en) | 2008-01-24 | 2014-11-11 | United Microelectronics Corp. | Method of removing oxides |
| JP4972594B2 (ja) | 2008-03-26 | 2012-07-11 | 東京エレクトロン株式会社 | エッチング方法及び半導体デバイスの製造方法 |
| KR101061178B1 (ko) * | 2008-12-30 | 2011-09-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
| EP2511948A4 (en) * | 2010-02-01 | 2014-07-02 | Central Glass Co Ltd | DRYING AGENT AND DRYING PROCESS WITH THIS |
| US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
| US8679982B2 (en) * | 2011-08-26 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and oxygen |
| US8679983B2 (en) * | 2011-09-01 | 2014-03-25 | Applied Materials, Inc. | Selective suppression of dry-etch rate of materials containing both silicon and nitrogen |
| US9039911B2 (en) * | 2012-08-27 | 2015-05-26 | Lam Research Corporation | Plasma-enhanced etching in an augmented plasma processing system |
| US8808563B2 (en) * | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
| US8916477B2 (en) | 2012-07-02 | 2014-12-23 | Novellus Systems, Inc. | Polysilicon etch with high selectivity |
| US9034773B2 (en) | 2012-07-02 | 2015-05-19 | Novellus Systems, Inc. | Removal of native oxide with high selectivity |
| US10283615B2 (en) | 2012-07-02 | 2019-05-07 | Novellus Systems, Inc. | Ultrahigh selective polysilicon etch with high throughput |
| JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US8969212B2 (en) * | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
| US9064812B2 (en) * | 2013-09-05 | 2015-06-23 | Applied Materials, Inc. | Aspect ratio dependent etch (ARDE) lag reduction process by selective oxidation with inert gas sputtering |
-
2014
- 2014-12-19 US US14/577,977 patent/US9558928B2/en active Active
-
2015
- 2015-08-27 JP JP2015167336A patent/JP6646978B2/ja active Active
- 2015-08-28 CN CN201510543852.XA patent/CN105390389B/zh active Active
- 2015-08-28 KR KR1020150121582A patent/KR102402866B1/ko active Active
- 2015-08-28 TW TW104128251A patent/TWI673791B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160027925A (ko) | 2016-03-10 |
| TW201626451A (zh) | 2016-07-16 |
| KR102402866B1 (ko) | 2022-05-26 |
| US9558928B2 (en) | 2017-01-31 |
| CN105390389B (zh) | 2018-05-11 |
| JP2016051900A (ja) | 2016-04-11 |
| TWI673791B (zh) | 2019-10-01 |
| US20160064212A1 (en) | 2016-03-03 |
| CN105390389A (zh) | 2016-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6646978B2 (ja) | 高アスペクト比構造におけるコンタクト洗浄 | |
| JP7715779B2 (ja) | 粗さを低減するための原子層堆積及びエッチング | |
| TWI699831B (zh) | 非等向性鎢蝕刻用方法及設備 | |
| KR102704250B1 (ko) | 초고 선택성 나이트라이드 에칭을 위한 시스템들 및 방법들 | |
| US9443701B2 (en) | Etching method | |
| JP6284786B2 (ja) | プラズマ処理装置のクリーニング方法 | |
| JP6009520B2 (ja) | シリコン含有膜の平滑SiConiエッチング | |
| TWI781309B (zh) | 被加工物之處理方法 | |
| TWI866919B (zh) | 電子激勵原子層蝕刻 | |
| US20230298896A1 (en) | Metal-based liner protection for high aspect ratio plasma etch | |
| JP2016157940A (ja) | 窒化シリコンのエッチング時における超高選択比を達成するための方法 | |
| JP7702419B2 (ja) | Euvパターニングにおける欠陥低減のための多層ハードマスク | |
| JP7426346B2 (ja) | 高アスペクト比構造の効率的な洗浄およびエッチング | |
| KR20150124392A (ko) | 드라이 클리닝 방법 및 플라즈마 처리 장치 | |
| WO2020028119A1 (en) | Non-selective and selective etching through alternating layers of materials | |
| JP7577546B2 (ja) | 基板処理方法及びプラズマ処理装置 | |
| JP7667167B2 (ja) | コア除去 | |
| JP2024533354A (ja) | 帯電誘起欠陥を低減するためのサイクリングレシピにおける多状態rfパルシング | |
| KR20220029478A (ko) | 기판 처리 방법 및 플라즈마 처리 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180824 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180824 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190426 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190903 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191217 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200114 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6646978 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |