JP6625796B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP6625796B2
JP6625796B2 JP2014215894A JP2014215894A JP6625796B2 JP 6625796 B2 JP6625796 B2 JP 6625796B2 JP 2014215894 A JP2014215894 A JP 2014215894A JP 2014215894 A JP2014215894 A JP 2014215894A JP 6625796 B2 JP6625796 B2 JP 6625796B2
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JP
Japan
Prior art keywords
film
oxide semiconductor
insulating film
transistor
oxide
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JP2014215894A
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English (en)
Japanese (ja)
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JP2015179248A5 (enExample
JP2015179248A (ja
Inventor
山崎　舜平
舜平 山崎
三宅　博之
博之 三宅
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2014215894A priority Critical patent/JP6625796B2/ja
Publication of JP2015179248A publication Critical patent/JP2015179248A/ja
Publication of JP2015179248A5 publication Critical patent/JP2015179248A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
JP2014215894A 2013-10-25 2014-10-23 表示装置 Active JP6625796B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014215894A JP6625796B2 (ja) 2013-10-25 2014-10-23 表示装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013222621 2013-10-25
JP2013222621 2013-10-25
JP2014038157 2014-02-28
JP2014038157 2014-02-28
JP2014215894A JP6625796B2 (ja) 2013-10-25 2014-10-23 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019215223A Division JP2020052410A (ja) 2013-10-25 2019-11-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2015179248A JP2015179248A (ja) 2015-10-08
JP2015179248A5 JP2015179248A5 (enExample) 2017-11-30
JP6625796B2 true JP6625796B2 (ja) 2019-12-25

Family

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Family Applications (5)

Application Number Title Priority Date Filing Date
JP2014215894A Active JP6625796B2 (ja) 2013-10-25 2014-10-23 表示装置
JP2019215223A Withdrawn JP2020052410A (ja) 2013-10-25 2019-11-28 半導体装置の作製方法
JP2022062391A Withdrawn JP2022104981A (ja) 2013-10-25 2022-04-04 半導体装置の作製方法
JP2023113661A Active JP7550927B2 (ja) 2013-10-25 2023-07-11 発光装置
JP2024151218A Pending JP2024174921A (ja) 2013-10-25 2024-09-03 発光装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2019215223A Withdrawn JP2020052410A (ja) 2013-10-25 2019-11-28 半導体装置の作製方法
JP2022062391A Withdrawn JP2022104981A (ja) 2013-10-25 2022-04-04 半導体装置の作製方法
JP2023113661A Active JP7550927B2 (ja) 2013-10-25 2023-07-11 発光装置
JP2024151218A Pending JP2024174921A (ja) 2013-10-25 2024-09-03 発光装置

Country Status (2)

Country Link
US (2) US9583516B2 (enExample)
JP (5) JP6625796B2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140111558A1 (en) * 2012-10-23 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Display device and program
US10529740B2 (en) * 2013-07-25 2020-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including semiconductor layer and conductive layer
KR102113177B1 (ko) * 2013-08-27 2020-06-03 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置
JP2016027597A (ja) * 2013-12-06 2016-02-18 株式会社半導体エネルギー研究所 半導体装置
JP6506545B2 (ja) 2013-12-27 2019-04-24 株式会社半導体エネルギー研究所 半導体装置
DE102014211239A1 (de) * 2014-06-12 2015-12-17 Benecke-Kaliko Ag Folie mit integrierter Sensorik
US9766517B2 (en) 2014-09-05 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Display device and display module
KR102193886B1 (ko) * 2014-11-12 2020-12-23 엘지디스플레이 주식회사 고 개구율 유기발광 다이오드 표시장치 및 그 제조 방법
KR102315094B1 (ko) * 2014-11-13 2021-10-20 엘지디스플레이 주식회사 고 개구율 유기발광 다이오드 표시장치 및 그 제조방법
JP6636755B2 (ja) * 2015-09-09 2020-01-29 株式会社半導体エネルギー研究所 半導体装置
WO2017064587A1 (en) * 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processor, and method for manufacturing display panel
DE112016005330T5 (de) * 2015-11-20 2018-08-23 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren der Halbleitervorrichtung oder Anzeigevorrichtung, die die Halbleitervorrichtung beinhaltet
US10607932B2 (en) 2016-07-05 2020-03-31 E Ink Holdings Inc. Circuit structure
US10475869B2 (en) * 2016-08-23 2019-11-12 Semiconductor Energy Laboratory Co., Ltd. Display device including display element and transistor
CN109643735B (zh) * 2016-09-12 2022-12-16 株式会社半导体能源研究所 显示装置及电子设备
TWI880886B (zh) * 2016-10-07 2025-04-21 日商半導體能源研究所股份有限公司 顯示裝置及電子裝置
US10790318B2 (en) 2016-11-22 2020-09-29 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same, and electronic device
US20180145096A1 (en) 2016-11-23 2018-05-24 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2018147050A1 (ja) 2017-02-13 2018-08-16 ソニー株式会社 表示装置、および電子機器
WO2018211351A1 (en) * 2017-05-19 2018-11-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and method for manufacturing semiconductor device
CN107946341B (zh) * 2017-11-10 2020-05-22 上海天马微电子有限公司 显示装置和显示装置的制造方法
CN108428730B (zh) * 2018-05-16 2021-01-26 京东方科技集团股份有限公司 Oled显示基板及其制作方法、显示装置
KR102275404B1 (ko) * 2018-08-03 2021-07-09 황장환 흡광투과필름 및 이를 포함하는 디스플레이 장치
CN112750861B (zh) * 2019-10-29 2025-02-25 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN112466209B (zh) * 2020-09-30 2022-05-27 武汉天马微电子有限公司 显示面板和显示装置
JP2022082111A (ja) * 2020-11-20 2022-06-01 大日本印刷株式会社 加飾シート付き表示装置
CN115116395B (zh) * 2022-07-15 2024-12-17 惠州华星光电显示有限公司 驱动电路、驱动方法及显示面板

Family Cites Families (122)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
DE19712233C2 (de) * 1996-03-26 2003-12-11 Lg Philips Lcd Co Flüssigkristallanzeige und Herstellungsverfahren dafür
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
US6580475B2 (en) 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US6576967B1 (en) * 2000-09-18 2003-06-10 Motorola, Inc. Semiconductor structure and process for forming a metal oxy-nitride dielectric layer
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
CN2682638Y (zh) 2003-11-20 2005-03-02 上海莫仕连接器有限公司 压接式导电端子
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
TWI429327B (zh) 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
JP5647757B2 (ja) 2005-06-30 2015-01-07 株式会社半導体エネルギー研究所 半導体装置、発光装置、モジュール、及び電子機器
US8629819B2 (en) * 2005-07-14 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP5015470B2 (ja) * 2006-02-15 2012-08-29 財団法人高知県産業振興センター 薄膜トランジスタ及びその製法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
US8803143B2 (en) * 2010-10-20 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including buffer layers with high resistivity
TWI432865B (zh) * 2010-12-01 2014-04-01 Au Optronics Corp 畫素結構及其製作方法
US8859330B2 (en) * 2011-03-23 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013125782A (ja) * 2011-12-13 2013-06-24 Hitachi Ltd 酸化物半導体装置
JP6111398B2 (ja) * 2011-12-20 2017-04-12 株式会社Ｊｏｌｅｄ 表示装置および電子機器
TW201327833A (zh) 2011-12-27 2013-07-01 Chimei Innolux Corp 顯示裝置以及包含其之影像顯示系統
KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI581431B (zh) * 2012-01-26 2017-05-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
JP5687638B2 (ja) * 2012-01-26 2015-03-18 株式会社東芝 表示装置の製造方法
US9520476B2 (en) 2012-01-31 2016-12-13 Sharp Kabushiki Kaisha Semiconductor device and method for producing same
CN108054175A (zh) 2012-08-03 2018-05-18 株式会社半导体能源研究所 半导体装置
JP2015179247A (ja) 2013-10-22 2015-10-08 株式会社半導体エネルギー研究所 表示装置

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