JP6624828B2 - 半導体装置、表示モジュール及び電子機器 - Google Patents

半導体装置、表示モジュール及び電子機器 Download PDF

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JP6624828B2
JP6624828B2 JP2015144674A JP2015144674A JP6624828B2 JP 6624828 B2 JP6624828 B2 JP 6624828B2 JP 2015144674 A JP2015144674 A JP 2015144674A JP 2015144674 A JP2015144674 A JP 2015144674A JP 6624828 B2 JP6624828 B2 JP 6624828B2
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transistor
wiring
potential
node
terminal
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JP2016029797A (ja
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敦司 梅崎
敦司 梅崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/0426—Layout of electrodes and connections
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0267—Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Shift Register Type Memory (AREA)
  • Electronic Switches (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of El Displays (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2015144674A 2014-07-24 2015-07-22 半導体装置、表示モジュール及び電子機器 Active JP6624828B2 (ja)

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JP2015144674A JP6624828B2 (ja) 2014-07-24 2015-07-22 半導体装置、表示モジュール及び電子機器

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JP2014150532 2014-07-24
JP2014150532 2014-07-24
JP2015144674A JP6624828B2 (ja) 2014-07-24 2015-07-22 半導体装置、表示モジュール及び電子機器

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP2016098756A Division JP6122999B2 (ja) 2014-07-24 2016-05-17 半導体装置
JP2017082470A Division JP6262902B2 (ja) 2014-07-24 2017-04-19 半導体装置
JP2017082471A Division JP6262903B2 (ja) 2014-07-24 2017-04-19 半導体装置
JP2019212946A Division JP6884843B2 (ja) 2014-07-24 2019-11-26 半導体装置

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JP2016029797A JP2016029797A (ja) 2016-03-03
JP6624828B2 true JP6624828B2 (ja) 2019-12-25

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JP2015144674A Active JP6624828B2 (ja) 2014-07-24 2015-07-22 半導体装置、表示モジュール及び電子機器
JP2016098756A Active JP6122999B2 (ja) 2014-07-24 2016-05-17 半導体装置
JP2017082470A Active JP6262902B2 (ja) 2014-07-24 2017-04-19 半導体装置
JP2017082471A Active JP6262903B2 (ja) 2014-07-24 2017-04-19 半導体装置
JP2017092778A Active JP6295359B2 (ja) 2014-07-24 2017-05-09 半導体装置
JP2018026559A Active JP6561159B2 (ja) 2014-07-24 2018-02-19 半導体装置
JP2019134375A Active JP6884825B2 (ja) 2014-07-24 2019-07-22 半導体装置
JP2019212946A Active JP6884843B2 (ja) 2014-07-24 2019-11-26 半導体装置
JP2021080904A Active JP7101847B2 (ja) 2014-07-24 2021-05-12 半導体装置
JP2022108469A Active JP7499296B2 (ja) 2014-07-24 2022-07-05 半導体装置
JP2024013977A Active JP7649889B2 (ja) 2014-07-24 2024-02-01 半導体装置
JP2024013993A Withdrawn JP2024052745A (ja) 2014-07-24 2024-02-01 半導体装置
JP2025037416A Pending JP2025083457A (ja) 2014-07-24 2025-03-10 トランジスタ

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JP2016098756A Active JP6122999B2 (ja) 2014-07-24 2016-05-17 半導体装置
JP2017082470A Active JP6262902B2 (ja) 2014-07-24 2017-04-19 半導体装置
JP2017082471A Active JP6262903B2 (ja) 2014-07-24 2017-04-19 半導体装置
JP2017092778A Active JP6295359B2 (ja) 2014-07-24 2017-05-09 半導体装置
JP2018026559A Active JP6561159B2 (ja) 2014-07-24 2018-02-19 半導体装置
JP2019134375A Active JP6884825B2 (ja) 2014-07-24 2019-07-22 半導体装置
JP2019212946A Active JP6884843B2 (ja) 2014-07-24 2019-11-26 半導体装置
JP2021080904A Active JP7101847B2 (ja) 2014-07-24 2021-05-12 半導体装置
JP2022108469A Active JP7499296B2 (ja) 2014-07-24 2022-07-05 半導体装置
JP2024013977A Active JP7649889B2 (ja) 2014-07-24 2024-02-01 半導体装置
JP2024013993A Withdrawn JP2024052745A (ja) 2014-07-24 2024-02-01 半導体装置
JP2025037416A Pending JP2025083457A (ja) 2014-07-24 2025-03-10 トランジスタ

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US (4) US20160027810A1 (enExample)
JP (13) JP6624828B2 (enExample)
KR (4) KR102397388B1 (enExample)

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JP6521794B2 (ja) 2014-09-03 2019-05-29 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US10326509B2 (en) * 2015-05-28 2019-06-18 Qualcomm Incorporated Link budget enhancements for single receiver devices
US10964767B2 (en) 2018-04-11 2021-03-30 Sakai Display Products Corporation Organic EL display device and manufacturing method for organic EL display device
CN208141792U (zh) 2018-05-28 2018-11-23 北京京东方技术开发有限公司 移位寄存器单元、电路结构、驱动电路及显示装置
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US10608015B2 (en) 2020-03-31
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