JP6614470B1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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JP6614470B1
JP6614470B1 JP2019533664A JP2019533664A JP6614470B1 JP 6614470 B1 JP6614470 B1 JP 6614470B1 JP 2019533664 A JP2019533664 A JP 2019533664A JP 2019533664 A JP2019533664 A JP 2019533664A JP 6614470 B1 JP6614470 B1 JP 6614470B1
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layer
semiconductor device
main surface
semiconductor
metal
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JPWO2019244383A1 (ja
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知恵 藤岡
知恵 藤岡
吉田　弘
弘 吉田
芳宏 松島
芳宏 松島
水原秀樹
秀樹 水原
正生 浜崎
正生 浜崎
光章 坂本
光章 坂本
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Panasonic Intellectual Property Management Co Ltd
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    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
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    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
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    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
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    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
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    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
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    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
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    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
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    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections

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  • Electrodes Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
JP2019533664A 2018-06-19 2019-01-17 半導体装置 Active JP6614470B1 (ja)

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US201862687051P 2018-06-19 2018-06-19
US62/687051 2018-06-19
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US (2) US10903359B2 (https=)
JP (2) JP6614470B1 (https=)
KR (2) KR102234945B1 (https=)
CN (2) CN113035865B (https=)
TW (2) TWI737559B (https=)
WO (1) WO2019244383A1 (https=)

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WO2019244383A1 (ja) * 2018-06-19 2019-12-26 パナソニックＩｐマネジメント株式会社 半導体装置
TWI761740B (zh) * 2018-12-19 2022-04-21 日商新唐科技日本股份有限公司 半導體裝置
JP7611155B2 (ja) * 2019-09-30 2025-01-09 ローム株式会社 半導体装置
JP7470070B2 (ja) * 2021-02-18 2024-04-17 株式会社東芝 半導体装置
JP7509711B2 (ja) * 2021-03-23 2024-07-02 株式会社東芝 半導体装置
JP7253674B2 (ja) * 2021-03-29 2023-04-06 ヌヴォトンテクノロジージャパン株式会社 半導体装置、電池保護回路、および、パワーマネージメント回路
JP7551554B2 (ja) * 2021-03-30 2024-09-17 株式会社東芝 半導体装置
TWI911454B (zh) 2021-06-25 2026-01-11 日商佳能股份有限公司 半導體裝置和製造半導體裝置的方法
EP4244893A4 (en) * 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. NITRIDE BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT AND METHOD FOR PRODUCING THE SAME
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
WO2023139813A1 (ja) * 2022-01-19 2023-07-27 ヌヴォトンテクノロジージャパン株式会社 半導体装置及びレーザマーキング方法
WO2024042809A1 (ja) * 2022-08-24 2024-02-29 ヌヴォトンテクノロジージャパン株式会社 半導体装置
CN117441235B (zh) * 2022-08-24 2024-05-10 新唐科技日本株式会社 半导体装置
WO2024157764A1 (ja) * 2023-01-23 2024-08-02 ヌヴォトンテクノロジージャパン株式会社 半導体装置
JP7599061B1 (ja) * 2023-08-25 2024-12-12 ヌヴォトンテクノロジージャパン株式会社 半導体装置
US20250218940A1 (en) * 2023-12-27 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and method of fabricating a semiconductor structure
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JP2011219828A (ja) * 2010-04-12 2011-11-04 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
JP2013247309A (ja) * 2012-05-29 2013-12-09 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
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KR102571505B1 (ko) 2023-08-28
JP6782828B2 (ja) 2020-11-11
US11107915B2 (en) 2021-08-31
US20200395479A1 (en) 2020-12-17
CN112368845A (zh) 2021-02-12
CN112368845B (zh) 2025-01-10
WO2019244383A1 (ja) 2019-12-26
JPWO2019244383A1 (ja) 2020-06-25
KR102234945B1 (ko) 2021-04-01
JP2020025115A (ja) 2020-02-13
TW202119590A (zh) 2021-05-16
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