JP6593336B2 - デバイス製造方法 - Google Patents

デバイス製造方法 Download PDF

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Publication number
JP6593336B2
JP6593336B2 JP2016545518A JP2016545518A JP6593336B2 JP 6593336 B2 JP6593336 B2 JP 6593336B2 JP 2016545518 A JP2016545518 A JP 2016545518A JP 2016545518 A JP2016545518 A JP 2016545518A JP 6593336 B2 JP6593336 B2 JP 6593336B2
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Japan
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substrate
layer
conductive layer
laminated structure
conductive
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Japanese (ja)
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JPWO2016031762A1 (ja
Inventor
圭 奈良
誠 中積
康孝 西
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Nikon Corp
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Nikon Corp
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Publication of JPWO2016031762A1 publication Critical patent/JPWO2016031762A1/ja
Priority to JP2019164387A priority Critical patent/JP6897734B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Liquid Crystal (AREA)
JP2016545518A 2014-08-26 2015-08-24 デバイス製造方法 Active JP6593336B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2019164387A JP6897734B2 (ja) 2014-08-26 2019-09-10 転写基板

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014171246 2014-08-26
JP2014171246 2014-08-26
PCT/JP2015/073700 WO2016031762A1 (ja) 2014-08-26 2015-08-24 デバイス製造方法および転写基板

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019164387A Division JP6897734B2 (ja) 2014-08-26 2019-09-10 転写基板

Publications (2)

Publication Number Publication Date
JPWO2016031762A1 JPWO2016031762A1 (ja) 2017-06-08
JP6593336B2 true JP6593336B2 (ja) 2019-10-23

Family

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Family Applications (2)

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JP2016545518A Active JP6593336B2 (ja) 2014-08-26 2015-08-24 デバイス製造方法
JP2019164387A Active JP6897734B2 (ja) 2014-08-26 2019-09-10 転写基板

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JP2019164387A Active JP6897734B2 (ja) 2014-08-26 2019-09-10 転写基板

Country Status (5)

Country Link
JP (2) JP6593336B2 (zh)
KR (1) KR102454094B1 (zh)
CN (3) CN106605294B (zh)
TW (3) TWI760683B (zh)
WO (1) WO2016031762A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10586817B2 (en) 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
CN108962975A (zh) * 2018-06-26 2018-12-07 武汉华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制作方法、显示装置
CN113826194A (zh) * 2019-05-20 2021-12-21 三井金属矿业株式会社 带载体的金属箔以及其使用方法和制造方法
JPWO2021044705A1 (zh) * 2019-09-03 2021-03-11
TWI715447B (zh) * 2020-02-21 2021-01-01 友達光電股份有限公司 背板的製造方法
CN112687548B (zh) * 2020-12-25 2024-05-24 光华临港工程应用技术研发(上海)有限公司 可转移的柔性互联结构的制备方法以及结构
US11178774B1 (en) 2021-03-23 2021-11-16 Chung W. Ho Method for manufacturing circuit board
CN114281215A (zh) * 2021-12-28 2022-04-05 安徽辅朗光学材料有限公司 一种触控板、触控模组及制备工艺

Family Cites Families (21)

* Cited by examiner, † Cited by third party
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JP3445402B2 (ja) * 1995-03-03 2003-09-08 大日本印刷株式会社 薄膜トランジスタとその製造方法およびアクティブマトリックス基板とその製造方法
JP3738798B2 (ja) * 1997-07-03 2006-01-25 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法及び液晶パネルの製造方法
TW487958B (en) * 2001-06-07 2002-05-21 Ind Tech Res Inst Manufacturing method of thin film transistor panel
US7508034B2 (en) * 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
JP4837240B2 (ja) * 2002-09-25 2011-12-14 シャープ株式会社 半導体装置
JP3918708B2 (ja) * 2002-10-08 2007-05-23 セイコーエプソン株式会社 回路基板及びその製造方法、転写チップ、転写元基板、電気光学装置、電子機器
JP4310685B2 (ja) * 2003-09-03 2009-08-12 セイコーエプソン株式会社 転写装置
JP4651924B2 (ja) * 2003-09-18 2011-03-16 シャープ株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
JP2005150686A (ja) * 2003-10-22 2005-06-09 Sharp Corp 半導体装置およびその製造方法
KR101368748B1 (ko) * 2004-06-04 2014-03-05 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
JP5041686B2 (ja) * 2004-07-30 2012-10-03 株式会社半導体エネルギー研究所 薄膜集積回路の剥離方法および半導体装置の作製方法
US7927971B2 (en) * 2004-07-30 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007150097A (ja) * 2005-11-29 2007-06-14 Toshiba Corp 半導体素子およびその製造方法
CN101506985A (zh) * 2006-09-22 2009-08-12 国产大学法人东北大学 半导体装置和半导体装置的制造方法
KR20110028473A (ko) * 2008-06-30 2011-03-18 가부시키가이샤 니콘 표시 소자의 제조 방법 및 제조 장치, 박막 트랜지스터의 제조 방법 및 제조 장치, 및 회로 형성 장치
JP2010238873A (ja) * 2009-03-31 2010-10-21 Panasonic Corp フレキシブル半導体装置およびその製造方法
JP5677306B2 (ja) * 2009-09-25 2015-02-25 出光興産株式会社 有機薄膜トランジスタ
CN103299448B (zh) * 2010-09-29 2016-09-07 Posco公司 使用辊形状母基板的柔性电子器件的制造方法、柔性电子器件及柔性基板
US9117920B2 (en) * 2011-05-19 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device using oxide semiconductor
KR20150037929A (ko) * 2012-08-01 2015-04-08 도쿄엘렉트론가부시키가이샤 전자 디바이스용 패턴 형성 방법, 전자 디바이스 및 패턴 형성 장치
WO2014126041A1 (ja) * 2013-02-15 2014-08-21 株式会社ニコン 薄膜の転写方法、薄膜トランジスタの製造方法、液晶表示装置の画素電極形成方法

Also Published As

Publication number Publication date
TWI662587B (zh) 2019-06-11
CN110379715A (zh) 2019-10-25
TWI777064B (zh) 2022-09-11
CN111128707B (zh) 2023-06-16
CN106605294A (zh) 2017-04-26
TW201933449A (zh) 2019-08-16
JP2020074364A (ja) 2020-05-14
JP6897734B2 (ja) 2021-07-07
KR102454094B1 (ko) 2022-10-14
TW201621978A (zh) 2016-06-16
WO2016031762A1 (ja) 2016-03-03
TW202018789A (zh) 2020-05-16
JPWO2016031762A1 (ja) 2017-06-08
CN106605294B (zh) 2020-01-21
KR20170048353A (ko) 2017-05-08
CN111128707A (zh) 2020-05-08
TWI760683B (zh) 2022-04-11

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