JP6583014B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP6583014B2
JP6583014B2 JP2016010821A JP2016010821A JP6583014B2 JP 6583014 B2 JP6583014 B2 JP 6583014B2 JP 2016010821 A JP2016010821 A JP 2016010821A JP 2016010821 A JP2016010821 A JP 2016010821A JP 6583014 B2 JP6583014 B2 JP 6583014B2
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Japan
Prior art keywords
film
electrode
forming
capacitor
layer
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JP2016010821A
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English (en)
Japanese (ja)
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JP2017130620A (ja
JP2017130620A5 (enExample
Inventor
洋平 小田
洋平 小田
藤原　剛
剛 藤原
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Denso Corp
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Denso Corp
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Publication date
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Priority to JP2016010821A priority Critical patent/JP6583014B2/ja
Priority to US15/777,681 priority patent/US10403709B2/en
Priority to PCT/JP2016/084092 priority patent/WO2017126207A1/ja
Publication of JP2017130620A publication Critical patent/JP2017130620A/ja
Publication of JP2017130620A5 publication Critical patent/JP2017130620A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2016010821A 2016-01-22 2016-01-22 半導体装置の製造方法 Active JP6583014B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016010821A JP6583014B2 (ja) 2016-01-22 2016-01-22 半導体装置の製造方法
US15/777,681 US10403709B2 (en) 2016-01-22 2016-11-17 Method for manufacturing semiconductor device
PCT/JP2016/084092 WO2017126207A1 (ja) 2016-01-22 2016-11-17 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016010821A JP6583014B2 (ja) 2016-01-22 2016-01-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2017130620A JP2017130620A (ja) 2017-07-27
JP2017130620A5 JP2017130620A5 (enExample) 2018-05-10
JP6583014B2 true JP6583014B2 (ja) 2019-10-02

Family

ID=59362060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016010821A Active JP6583014B2 (ja) 2016-01-22 2016-01-22 半導体装置の製造方法

Country Status (3)

Country Link
US (1) US10403709B2 (enExample)
JP (1) JP6583014B2 (enExample)
WO (1) WO2017126207A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018120123A (ja) * 2017-01-26 2018-08-02 株式会社ジャパンディスプレイ 表示装置及び基板間導通構造
JP6888581B2 (ja) 2018-04-11 2021-06-16 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04241449A (ja) * 1991-01-16 1992-08-28 Hitachi Ltd 半導体集積回路装置
JPH11274428A (ja) * 1998-03-19 1999-10-08 Kawasaki Steel Corp 半導体装置及びその製造方法
US6780704B1 (en) * 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
JP3948321B2 (ja) * 2002-03-26 2007-07-25 株式会社村田製作所 ３端子コンデンサの実装構造
KR100480603B1 (ko) * 2002-07-19 2005-04-06 삼성전자주식회사 일정한 커패시턴스를 갖는 금속-절연체-금속 커패시터를 포함하는 반도체 소자
KR100456697B1 (ko) * 2002-07-30 2004-11-10 삼성전자주식회사 반도체 장치의 캐패시터 및 그 제조방법
JP4571836B2 (ja) 2004-07-23 2010-10-27 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP4837943B2 (ja) 2005-05-30 2011-12-14 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
JP4333642B2 (ja) * 2005-06-17 2009-09-16 ヤマハ株式会社 キャパシタ装置及びキャパシタ装置の製造方法
KR100678640B1 (ko) * 2005-11-12 2007-02-05 삼성전자주식회사 Ｍｉｍ 커패시터를 구비하는 반도체 집적 회로 장치 및이의 제조 방법
JP2007294848A (ja) * 2006-03-30 2007-11-08 Eudyna Devices Inc キャパシタおよび電子回路
US10513772B2 (en) 2009-10-20 2019-12-24 Asm International N.V. Process for passivating dielectric films
JP5576719B2 (ja) * 2010-06-10 2014-08-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9343298B2 (en) 2010-09-28 2016-05-17 Imec Metal-insulator-metal capacitor and method for manufacturing thereof
JP2012104551A (ja) * 2010-11-08 2012-05-31 Elpida Memory Inc 半導体記憶装置及びその製造方法
JP6079279B2 (ja) 2013-02-05 2017-02-15 三菱電機株式会社 半導体装置、半導体装置の製造方法
US8952748B2 (en) * 2013-03-13 2015-02-10 Futurewei Technologies, Inc. Circuit and method for a multi-mode filter

Also Published As

Publication number Publication date
JP2017130620A (ja) 2017-07-27
US20180350897A1 (en) 2018-12-06
US10403709B2 (en) 2019-09-03
WO2017126207A1 (ja) 2017-07-27

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