JP6578125B2 - 気化供給装置 - Google Patents

気化供給装置 Download PDF

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Publication number
JP6578125B2
JP6578125B2 JP2015093494A JP2015093494A JP6578125B2 JP 6578125 B2 JP6578125 B2 JP 6578125B2 JP 2015093494 A JP2015093494 A JP 2015093494A JP 2015093494 A JP2015093494 A JP 2015093494A JP 6578125 B2 JP6578125 B2 JP 6578125B2
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Japan
Prior art keywords
liquid
vaporizer
gas
control valve
detector
Prior art date
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Active
Application number
JP2015093494A
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English (en)
Japanese (ja)
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JP2016211021A (ja
JP2016211021A5 (https=
Inventor
敦志 日高
敦志 日高
正明 永瀬
正明 永瀬
薫 平田
薫 平田
勝幸 杉田
勝幸 杉田
貴紀 中谷
貴紀 中谷
哲 山下
哲 山下
西野　功二
功二 西野
池田　信一
信一 池田
圭志 平尾
圭志 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikin Inc
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Fujikin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015093494A priority Critical patent/JP6578125B2/ja
Application filed by Fujikin Inc filed Critical Fujikin Inc
Priority to KR1020177017535A priority patent/KR101962659B1/ko
Priority to PCT/JP2016/001967 priority patent/WO2016174832A1/ja
Priority to CN201680007156.XA priority patent/CN107532298B/zh
Priority to US15/565,696 priority patent/US10646844B2/en
Priority to TW105112439A priority patent/TWI632609B/zh
Publication of JP2016211021A publication Critical patent/JP2016211021A/ja
Publication of JP2016211021A5 publication Critical patent/JP2016211021A5/ja
Application granted granted Critical
Publication of JP6578125B2 publication Critical patent/JP6578125B2/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J7/00—Apparatus for generating gases
    • B01J7/02—Apparatus for generating gases by wet methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2015093494A 2015-04-30 2015-04-30 気化供給装置 Active JP6578125B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015093494A JP6578125B2 (ja) 2015-04-30 2015-04-30 気化供給装置
PCT/JP2016/001967 WO2016174832A1 (ja) 2015-04-30 2016-04-11 気化供給装置
CN201680007156.XA CN107532298B (zh) 2015-04-30 2016-04-11 气化供给装置
US15/565,696 US10646844B2 (en) 2015-04-30 2016-04-11 Vaporization supply apparatus
KR1020177017535A KR101962659B1 (ko) 2015-04-30 2016-04-11 기화 공급 장치
TW105112439A TWI632609B (zh) 2015-04-30 2016-04-21 氣化供給裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015093494A JP6578125B2 (ja) 2015-04-30 2015-04-30 気化供給装置

Publications (3)

Publication Number Publication Date
JP2016211021A JP2016211021A (ja) 2016-12-15
JP2016211021A5 JP2016211021A5 (https=) 2018-03-15
JP6578125B2 true JP6578125B2 (ja) 2019-09-18

Family

ID=57199662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015093494A Active JP6578125B2 (ja) 2015-04-30 2015-04-30 気化供給装置

Country Status (6)

Country Link
US (1) US10646844B2 (https=)
JP (1) JP6578125B2 (https=)
KR (1) KR101962659B1 (https=)
CN (1) CN107532298B (https=)
TW (1) TWI632609B (https=)
WO (1) WO2016174832A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102338026B1 (ko) 2017-07-25 2021-12-10 가부시키가이샤 후지킨 유체 제어 장치
JP7097085B2 (ja) * 2017-07-25 2022-07-07 株式会社フジキン 流体制御装置
JP7137921B2 (ja) * 2017-11-07 2022-09-15 株式会社堀場エステック 気化システム及び気化システム用プログラム
US12121926B2 (en) 2019-08-29 2024-10-22 Fujikin Incorporated Fluid supply system
CN114270083A (zh) * 2019-08-30 2022-04-01 株式会社富士金 隔膜阀
KR102894024B1 (ko) 2019-09-19 2025-12-02 가부시키가이샤 후지킨 기화 공급 장치
TWI846960B (zh) * 2019-10-04 2024-07-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 低揮發性前驅物的供應系統
JP7111408B2 (ja) * 2019-12-06 2022-08-02 株式会社フジキン 流量制御装置の異常検知方法および流量監視方法
KR102641135B1 (ko) * 2019-12-16 2024-02-28 가부시키가이샤 후지킨 기화 공급 방법 및 기화 공급 장치
JP7457522B2 (ja) * 2020-02-20 2024-03-28 株式会社堀場エステック 気化システム
WO2022022188A1 (zh) * 2020-07-27 2022-02-03 江苏菲沃泰纳米科技股份有限公司 原料气化装置和镀膜装置以及镀膜设备及其进料方法
JP7589890B2 (ja) * 2020-10-07 2024-11-26 株式会社フジキン 気化装置、ガス供給装置及びガス供給装置の制御方法
WO2022091713A1 (ja) * 2020-10-31 2022-05-05 株式会社フジキン ガス供給システムおよびガス供給方法
US20240101446A1 (en) * 2021-03-11 2024-03-28 Fujikin Incorporated Vaporizer and vaporization supply device
WO2022209639A1 (ja) 2021-04-01 2022-10-06 株式会社フジキン 制御器及び気化供給装置
CN217156914U (zh) * 2021-06-11 2022-08-09 台湾东电化股份有限公司 驱动机构
JP2023166664A (ja) * 2022-05-10 2023-11-22 大陽日酸株式会社 半導体材料ガス供給装置
KR102774123B1 (ko) * 2023-06-02 2025-03-04 주식회사 비투지홀딩스 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비의 갈륨 공급 장치 및 이를 포함하는 하이드라이드 기상 증착 장비

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2814380B2 (ja) * 1989-04-01 1998-10-22 東京エレクトロン東北株式会社 液体材料気化供給装置
JP2000133644A (ja) * 1998-10-28 2000-05-12 Mitsubishi Electric Corp 半導体装置の製造装置
JP2005217089A (ja) * 2004-01-29 2005-08-11 Nec Kansai Ltd 半導体製造装置および半導体製造方法
JP3896594B2 (ja) * 2004-10-01 2007-03-22 株式会社ユーテック Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置及びｃｖｄ用気化方法
JP4263206B2 (ja) * 2005-11-15 2009-05-13 東京エレクトロン株式会社 熱処理方法、熱処理装置及び気化装置
JP5461786B2 (ja) * 2008-04-01 2014-04-02 株式会社フジキン 気化器を備えたガス供給装置
JP5155895B2 (ja) 2009-01-27 2013-03-06 日本エア・リキード株式会社 充填容器内の液体材料の供給装置および該液体材料の供給装置における充填容器内の液面管理方法
JP5350824B2 (ja) * 2009-02-03 2013-11-27 株式会社フジキン 液体材料の気化供給システム
JP5652960B2 (ja) * 2011-08-01 2015-01-14 株式会社フジキン 原料気化供給装置
JP5913888B2 (ja) 2011-09-30 2016-04-27 国立大学法人東北大学 気化器
JP2014006151A (ja) * 2012-06-25 2014-01-16 Taiyo Nippon Sanso Corp 液体材料有無検知方法
JP5837869B2 (ja) 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
JP5548292B1 (ja) * 2013-05-30 2014-07-16 株式会社堀場エステック 加熱気化システムおよび加熱気化方法

Also Published As

Publication number Publication date
KR101962659B1 (ko) 2019-03-27
TW201705279A (zh) 2017-02-01
US10646844B2 (en) 2020-05-12
JP2016211021A (ja) 2016-12-15
WO2016174832A1 (ja) 2016-11-03
CN107532298A (zh) 2018-01-02
KR20170088416A (ko) 2017-08-01
TWI632609B (zh) 2018-08-11
US20180071702A1 (en) 2018-03-15
CN107532298B (zh) 2019-07-26

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