JP6578125B2 - 気化供給装置 - Google Patents

気化供給装置 Download PDF

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Publication number
JP6578125B2
JP6578125B2 JP2015093494A JP2015093494A JP6578125B2 JP 6578125 B2 JP6578125 B2 JP 6578125B2 JP 2015093494 A JP2015093494 A JP 2015093494A JP 2015093494 A JP2015093494 A JP 2015093494A JP 6578125 B2 JP6578125 B2 JP 6578125B2
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Japan
Prior art keywords
liquid
vaporizer
gas
control valve
detector
Prior art date
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Active
Application number
JP2015093494A
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English (en)
Japanese (ja)
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JP2016211021A (ja
JP2016211021A5 (enExample
Inventor
敦志 日高
敦志 日高
正明 永瀬
正明 永瀬
薫 平田
薫 平田
勝幸 杉田
勝幸 杉田
貴紀 中谷
貴紀 中谷
哲 山下
哲 山下
西野　功二
功二 西野
池田　信一
信一 池田
圭志 平尾
圭志 平尾
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Fujikin Inc
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Fujikin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2015093494A priority Critical patent/JP6578125B2/ja
Application filed by Fujikin Inc filed Critical Fujikin Inc
Priority to CN201680007156.XA priority patent/CN107532298B/zh
Priority to PCT/JP2016/001967 priority patent/WO2016174832A1/ja
Priority to KR1020177017535A priority patent/KR101962659B1/ko
Priority to US15/565,696 priority patent/US10646844B2/en
Priority to TW105112439A priority patent/TWI632609B/zh
Publication of JP2016211021A publication Critical patent/JP2016211021A/ja
Publication of JP2016211021A5 publication Critical patent/JP2016211021A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B01J4/008—Feed or outlet control devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00—Feed or outlet devices; Feed or outlet control devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J7/00—Apparatus for generating gases
    • B01J7/02—Apparatus for generating gases by wet methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2015093494A 2015-04-30 2015-04-30 気化供給装置 Active JP6578125B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015093494A JP6578125B2 (ja) 2015-04-30 2015-04-30 気化供給装置
PCT/JP2016/001967 WO2016174832A1 (ja) 2015-04-30 2016-04-11 気化供給装置
KR1020177017535A KR101962659B1 (ko) 2015-04-30 2016-04-11 기화 공급 장치
US15/565,696 US10646844B2 (en) 2015-04-30 2016-04-11 Vaporization supply apparatus
CN201680007156.XA CN107532298B (zh) 2015-04-30 2016-04-11 气化供给装置
TW105112439A TWI632609B (zh) 2015-04-30 2016-04-21 Gasification supply device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015093494A JP6578125B2 (ja) 2015-04-30 2015-04-30 気化供給装置

Publications (3)

Publication Number Publication Date
JP2016211021A JP2016211021A (ja) 2016-12-15
JP2016211021A5 JP2016211021A5 (enExample) 2018-03-15
JP6578125B2 true JP6578125B2 (ja) 2019-09-18

Family

ID=57199662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015093494A Active JP6578125B2 (ja) 2015-04-30 2015-04-30 気化供給装置

Country Status (6)

Country Link
US (1) US10646844B2 (enExample)
JP (1) JP6578125B2 (enExample)
KR (1) KR101962659B1 (enExample)
CN (1) CN107532298B (enExample)
TW (1) TWI632609B (enExample)
WO (1) WO2016174832A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200149162A1 (en) 2017-07-25 2020-05-14 Fujikin Incorporated Fluid control device
CN110914470A (zh) * 2017-07-25 2020-03-24 株式会社富士金 流体控制装置
JP7137921B2 (ja) * 2017-11-07 2022-09-15 株式会社堀場エステック 気化システム及び気化システム用プログラム
US12121926B2 (en) 2019-08-29 2024-10-22 Fujikin Incorporated Fluid supply system
US11976748B2 (en) 2019-08-30 2024-05-07 Fujikin Incorporated Diaphragm valve
WO2021054135A1 (ja) * 2019-09-19 2021-03-25 株式会社フジキン 気化供給装置
TWI846960B (zh) * 2019-10-04 2024-07-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 低揮發性前驅物的供應系統
KR102646603B1 (ko) 2019-12-06 2024-03-12 가부시키가이샤 후지킨 유량 제어 장치의 이상 검지 방법 및 유량 감시 방법
US20230002900A1 (en) * 2019-12-16 2023-01-05 Fujikin Incorporated Vaporization supply method and vaporization supply device
JP7457522B2 (ja) * 2020-02-20 2024-03-28 株式会社堀場エステック 気化システム
EP4190939A4 (en) * 2020-07-27 2024-09-25 Jiangsu Favored Nanotechnology Co., Ltd. RAW MATERIAL GASIFICATION DEVICE, FILM COATING DEVICE, FILM COATING APPARATUS AND FEEDING METHOD THEREFOR
JP7589890B2 (ja) * 2020-10-07 2024-11-26 株式会社フジキン 気化装置、ガス供給装置及びガス供給装置の制御方法
KR102812621B1 (ko) * 2020-10-31 2025-05-26 가부시키가이샤 후지킨 가스 공급 시스템 및 가스 공급 방법
US20240101446A1 (en) * 2021-03-11 2024-03-28 Fujikin Incorporated Vaporizer and vaporization supply device
US12398819B2 (en) 2021-04-01 2025-08-26 Fujikin Incorporated Controller and vaporization supply device
CN217156914U (zh) * 2021-06-11 2022-08-09 台湾东电化股份有限公司 驱动机构
KR102774123B1 (ko) * 2023-06-02 2025-03-04 주식회사 비투지홀딩스 질화갈륨 단결정 성장을 위한 하이드라이드 기상 증착 장비의 갈륨 공급 장치 및 이를 포함하는 하이드라이드 기상 증착 장비

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2814380B2 (ja) * 1989-04-01 1998-10-22 東京エレクトロン東北株式会社 液体材料気化供給装置
JP2000133644A (ja) * 1998-10-28 2000-05-12 Mitsubishi Electric Corp 半導体装置の製造装置
JP2005217089A (ja) * 2004-01-29 2005-08-11 Nec Kansai Ltd 半導体製造装置および半導体製造方法
JP3896594B2 (ja) * 2004-10-01 2007-03-22 株式会社ユーテック Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置及びｃｖｄ用気化方法
JP4263206B2 (ja) * 2005-11-15 2009-05-13 東京エレクトロン株式会社 熱処理方法、熱処理装置及び気化装置
JP5461786B2 (ja) * 2008-04-01 2014-04-02 株式会社フジキン 気化器を備えたガス供給装置
JP5155895B2 (ja) * 2009-01-27 2013-03-06 日本エア・リキード株式会社 充填容器内の液体材料の供給装置および該液体材料の供給装置における充填容器内の液面管理方法
JP5350824B2 (ja) * 2009-02-03 2013-11-27 株式会社フジキン 液体材料の気化供給システム
JP5652960B2 (ja) * 2011-08-01 2015-01-14 株式会社フジキン 原料気化供給装置
JP5913888B2 (ja) 2011-09-30 2016-04-27 国立大学法人東北大学 気化器
JP2014006151A (ja) 2012-06-25 2014-01-16 Taiyo Nippon Sanso Corp 液体材料有無検知方法
JP5837869B2 (ja) 2012-12-06 2015-12-24 株式会社フジキン 原料気化供給装置
JP5548292B1 (ja) * 2013-05-30 2014-07-16 株式会社堀場エステック 加熱気化システムおよび加熱気化方法

Also Published As

Publication number Publication date
CN107532298B (zh) 2019-07-26
KR20170088416A (ko) 2017-08-01
WO2016174832A1 (ja) 2016-11-03
JP2016211021A (ja) 2016-12-15
CN107532298A (zh) 2018-01-02
US20180071702A1 (en) 2018-03-15
US10646844B2 (en) 2020-05-12
KR101962659B1 (ko) 2019-03-27
TW201705279A (zh) 2017-02-01
TWI632609B (zh) 2018-08-11

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