JP6574744B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP6574744B2
JP6574744B2 JP2016182065A JP2016182065A JP6574744B2 JP 6574744 B2 JP6574744 B2 JP 6574744B2 JP 2016182065 A JP2016182065 A JP 2016182065A JP 2016182065 A JP2016182065 A JP 2016182065A JP 6574744 B2 JP6574744 B2 JP 6574744B2
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Japan
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region
type
semiconductor device
semiconductor region
electrode
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Japanese (ja)
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JP2018046255A5 (enExample
JP2018046255A (ja
Inventor
北川　光彦
光彦 北川
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to JP2016182065A priority Critical patent/JP6574744B2/ja
Priority to US15/446,642 priority patent/US10319844B2/en
Publication of JP2018046255A publication Critical patent/JP2018046255A/ja
Publication of JP2018046255A5 publication Critical patent/JP2018046255A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016182065A 2016-09-16 2016-09-16 半導体装置 Active JP6574744B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2016182065A JP6574744B2 (ja) 2016-09-16 2016-09-16 半導体装置
US15/446,642 US10319844B2 (en) 2016-09-16 2017-03-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016182065A JP6574744B2 (ja) 2016-09-16 2016-09-16 半導体装置

Publications (3)

Publication Number Publication Date
JP2018046255A JP2018046255A (ja) 2018-03-22
JP2018046255A5 JP2018046255A5 (enExample) 2018-10-18
JP6574744B2 true JP6574744B2 (ja) 2019-09-11

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US (1) US10319844B2 (enExample)
JP (1) JP6574744B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7008293B2 (ja) * 2017-04-27 2022-01-25 国立研究開発法人情報通信研究機構 Ｇａ２Ｏ３系半導体素子
CN108922923B (zh) * 2018-07-10 2020-09-29 电子科技大学 一种槽栅双极型晶体管
JP7027287B2 (ja) * 2018-09-19 2022-03-01 株式会社東芝 半導体装置
US11101375B2 (en) 2019-03-19 2021-08-24 Kabushiki Kaisha Toshiba Semiconductor device and method of controlling same
US11728422B2 (en) 2019-11-14 2023-08-15 Stmicroelectronics S.R.L. Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof
JP7364488B2 (ja) * 2020-02-05 2023-10-18 株式会社東芝 半導体装置
JP7297709B2 (ja) * 2020-03-19 2023-06-26 株式会社東芝 半導体装置及び半導体回路
CN113838936B (zh) 2020-06-23 2025-10-17 意法半导体股份有限公司 具有改善短路性能的4H-SiC电子器件及其制造方法
IT202000015076A1 (it) 2020-06-23 2021-12-23 St Microelectronics Srl Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione
JP7330154B2 (ja) * 2020-09-16 2023-08-21 株式会社東芝 半導体装置及び半導体回路
JP7548776B2 (ja) 2020-11-02 2024-09-10 株式会社東芝 半導体装置及び半導体モジュール
JP7444027B2 (ja) * 2020-11-06 2024-03-06 三菱電機株式会社 半導体装置
JP7638768B2 (ja) * 2021-04-05 2025-03-04 キオクシア株式会社 半導体記憶装置
CN116264244B (zh) * 2021-12-15 2024-12-24 苏州东微半导体股份有限公司 Igbt器件
JP2023115995A (ja) * 2022-02-09 2023-08-22 株式会社 日立パワーデバイス 半導体装置およびそれを用いた電力変換装置
CN114937692B (zh) * 2022-07-25 2022-10-28 深圳市威兆半导体股份有限公司 一种具有沟道二极管的阶梯沟槽栅SiC MOSFET结构及其制备方法
WO2024195041A1 (ja) * 2023-03-22 2024-09-26 三菱電機株式会社 半導体装置、および、半導体装置の製造方法

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JPH10256550A (ja) * 1997-01-09 1998-09-25 Toshiba Corp 半導体装置
US6153495A (en) 1998-03-09 2000-11-28 Intersil Corporation Advanced methods for making semiconductor devices by low temperature direct bonding
JP4198251B2 (ja) 1999-01-07 2008-12-17 三菱電機株式会社 電力用半導体装置およびその製造方法
JP4479052B2 (ja) * 2000-05-09 2010-06-09 富士電機システムズ株式会社 半導体装置
JP4030273B2 (ja) 2001-05-09 2008-01-09 新電元工業株式会社 半導体装置
JP3908572B2 (ja) 2002-03-18 2007-04-25 株式会社東芝 半導体素子
JP4166627B2 (ja) 2003-05-30 2008-10-15 株式会社デンソー 半導体装置
JP2005340626A (ja) * 2004-05-28 2005-12-08 Toshiba Corp 半導体装置
JP4725040B2 (ja) 2004-06-17 2011-07-13 富士電機システムズ株式会社 Ｓｏｉトレンチ横型ｉｇｂｔ
JP2008300474A (ja) 2007-05-30 2008-12-11 Toyota Central R&D Labs Inc 半導体装置
JP2009004668A (ja) 2007-06-25 2009-01-08 Toshiba Corp 半導体装置
JP5251102B2 (ja) 2007-12-10 2013-07-31 株式会社デンソー 半導体装置
JP5358963B2 (ja) 2008-02-04 2013-12-04 富士電機株式会社 半導体装置およびその製造方法
JP2010040973A (ja) 2008-08-08 2010-02-18 Sony Corp 半導体装置およびその製造方法
JP2010225816A (ja) * 2009-03-23 2010-10-07 Toshiba Corp 半導体装置
JP2010225833A (ja) 2009-03-24 2010-10-07 Toshiba Corp 半導体装置
JP2010251517A (ja) 2009-04-15 2010-11-04 Tokyo Electric Power Co Inc:The パワー半導体素子
JP5636254B2 (ja) 2009-12-15 2014-12-03 株式会社東芝 半導体装置
JP5760320B2 (ja) 2010-01-28 2015-08-05 富士電機株式会社 半導体装置
JP5762689B2 (ja) 2010-02-26 2015-08-12 株式会社東芝 半導体装置
JP5634318B2 (ja) * 2011-04-19 2014-12-03 三菱電機株式会社 半導体装置
JP6177154B2 (ja) * 2013-07-16 2017-08-09 株式会社東芝 半導体装置
JP6105431B2 (ja) 2013-08-01 2017-03-29 東芝三菱電機産業システム株式会社 電力用半導体素子のゲート制御回路
JP2015176927A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置および絶縁ゲート型バイポーラトランジスタ

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JP2018046255A (ja) 2018-03-22
US10319844B2 (en) 2019-06-11

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