JP6554508B2 - 電気化学的ストレージ用の複合材料 - Google Patents
電気化学的ストレージ用の複合材料 Download PDFInfo
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- JP6554508B2 JP6554508B2 JP2017092843A JP2017092843A JP6554508B2 JP 6554508 B2 JP6554508 B2 JP 6554508B2 JP 2017092843 A JP2017092843 A JP 2017092843A JP 2017092843 A JP2017092843 A JP 2017092843A JP 6554508 B2 JP6554508 B2 JP 6554508B2
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- 239000002131 composite material Substances 0.000 title claims description 110
- 238000003860 storage Methods 0.000 title description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 97
- 239000000203 mixture Substances 0.000 claims description 71
- 229910052799 carbon Inorganic materials 0.000 claims description 58
- 239000002245 particle Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 40
- 239000002243 precursor Substances 0.000 claims description 35
- 229910002804 graphite Inorganic materials 0.000 claims description 34
- 239000010439 graphite Substances 0.000 claims description 34
- 239000011856 silicon-based particle Substances 0.000 claims description 34
- 229910021385 hard carbon Inorganic materials 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004642 Polyimide Substances 0.000 claims description 17
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- 239000011363 dried mixture Substances 0.000 claims description 14
- 238000005266 casting Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 2
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- 238000007731 hot pressing Methods 0.000 claims 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 39
- 239000010703 silicon Substances 0.000 description 38
- 239000012528 membrane Substances 0.000 description 25
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 20
- 239000011888 foil Substances 0.000 description 19
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
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- 239000002184 metal Substances 0.000 description 12
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 11
- 229910052744 lithium Inorganic materials 0.000 description 11
- 229910001416 lithium ion Inorganic materials 0.000 description 10
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 9
- 238000001723 curing Methods 0.000 description 9
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- 239000002134 carbon nanofiber Substances 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 229910001317 nickel manganese cobalt oxide (NMC) Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000011149 active material Substances 0.000 description 6
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 229920005575 poly(amic acid) Polymers 0.000 description 6
- 238000000197 pyrolysis Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
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- GWHJZXXIDMPWGX-UHFFFAOYSA-N 1,2,4-trimethylbenzene Chemical compound CC1=CC=C(C)C(C)=C1 GWHJZXXIDMPWGX-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical class [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
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- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- FTEPVGGPJFNOIK-UHFFFAOYSA-N [C].[C].[Si] Chemical compound [C].[C].[Si] FTEPVGGPJFNOIK-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- -1 lithium Chemical compound 0.000 description 1
- VGYDTVNNDKLMHX-UHFFFAOYSA-N lithium;manganese;nickel;oxocobalt Chemical compound [Li].[Mn].[Ni].[Co]=O VGYDTVNNDKLMHX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CQDGTJPVBWZJAZ-UHFFFAOYSA-N monoethyl carbonate Chemical compound CCOC(O)=O CQDGTJPVBWZJAZ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003209 petroleum derivative Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000002153 silicon-carbon composite material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
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Description
アノード製造のための以下の例となるプロセスは、概して、構成要素を一緒に混合するステップと、それらの構成要素を除去可能な基板上にキャストするステップ、乾燥するステップと、硬化するステップと、基板を除去するステップと、次に、得られた試料を熱分解するステップと、を含む。典型的には、N−メチルー2−ピロリドン(NMP)が、溶媒として使用され、任意の混合物の粘度を変更し、ドクターブレード手法を使用して、それをキャスタブルにする。
図12は、金属箔支持層を備えない、4.3cm×4.3cmの複合アノード膜の写真である。複合アノード膜は、約30マイクロメートルの厚さを有し、約15.8重量のPI 2611由来の炭素、約10.5重量%のグラファイト粒子、および約73.7重量%のケイ素の組成を有する。
101、102、103、104、105 ブロック
Claims (14)
- 電池電極用の複合材料膜を形成する方法であって、
ポリイミドまたはポリイミド前駆体を含む混合物を提供するステップであって、前記混合物がケイ素粒子およびグラファイト粒子をさらに含む、ステップと、
前記混合物を熱分解するステップであって、前記ポリイミドまたは前記ポリイミド前駆体を1種または複数種の炭素相に変換し、複合材料膜を形成し、前記1種または複数種の炭素相が、前記複合材料膜の10重量%〜25重量%の硬質炭素を含み、熱分解された膜を保持し、前記ケイ素粒子が前記複合材料膜の50重量%以上90重量%未満であり、前記ケイ素粒子が前記1種または複数種の炭素相の全体にわたって分散されており、結果として自立複合構造を生じるステップと、を含む、方法。 - 基板上に前記混合物をキャストするステップと、
前記混合物を乾燥するステップと、
前記基板から乾燥された前記混合物を取り外すステップと、
ホットプレス中に乾燥された前記混合物を配置するステップと、
をさらに含む、請求項1に記載の方法。 - ホットプレス中に乾燥された前記混合物を配置するステップが、ホットプレス中に乾燥された前記混合物を200℃で配置するステップを含む、請求項2に記載の方法。
- 前記複合材料膜から電池電極を形成するステップをさらに含む、請求項1から3の何れか1項に記載の方法。
- 前記混合物を提供するステップが、10nmから40μmの平均最大寸法を有するケイ素粒子を提供するステップを含む、請求項1から4の何れか1項に記載の方法。
- 前記混合物を提供するステップが、混合物中に導電性粒子を提供するステップを含む、請求項1から5の何れか1項に記載の方法。
- 前記混合物を提供するステップが、混合物中に銅、ニッケル、またはステンレス鋼の粒子を提供するステップを含む、請求項1から6の何れか1項に記載の方法。
- 前記複合材料膜が、60重量%以上のケイ素粒子を含む、請求項1から7の何れか1項に記載の方法。
- 前記複合材料膜が、60重量%〜80重量%のケイ素粒子を含む、請求項8に記載の方法。
- 前記複合材料膜が、70重量%〜80重量%のケイ素粒子を含む、請求項9に記載の方法。
- 前記複合材料膜が、10.5重量%のグラファイト粒子を含む、請求項1に記載の方法。
- 前記複合材料膜が、電気化学的に活性である、請求項1から11の何れか1項に記載の方法。
- 炭素相の少なくとも1種が、電気化学的に活性であり、かつ導電性である、請求項1から12の何れか1項に記載の方法。
- 炭素相の少なくとも1種が、連続相である、請求項1から13の何れか1項に記載の方法。
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