JP6542775B2 - 双方向デバイス製造のためのシステムおよび方法 - Google Patents

双方向デバイス製造のためのシステムおよび方法 Download PDF

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JP6542775B2
JP6542775B2 JP2016538542A JP2016538542A JP6542775B2 JP 6542775 B2 JP6542775 B2 JP 6542775B2 JP 2016538542 A JP2016538542 A JP 2016538542A JP 2016538542 A JP2016538542 A JP 2016538542A JP 6542775 B2 JP6542775 B2 JP 6542775B2
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wafer
handle wafer
handle
temperature
introducing
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JP2017509136A5 (OSRAM
JP2017509136A (ja
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リチャード エー． ブランチャード
リチャード エー． ブランチャード
ウィリアム シー． アレクサンダー
ウィリアム シー． アレクサンダー
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アイディール パワー インコーポレイテッド
アイディール パワー インコーポレイテッド
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Priority claimed from US14/313,960 external-priority patent/US9029909B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/101—Three-dimensional [3D] integrated devices comprising components on opposite major surfaces of semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/01—Manufacture or treatment
    • H10D18/021—Manufacture or treatment of bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

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  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2016538542A 2013-12-11 2014-12-10 双方向デバイス製造のためのシステムおよび方法 Active JP6542775B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201361914491P 2013-12-11 2013-12-11
US61/914,491 2013-12-11
US201461924884P 2014-01-08 2014-01-08
US61/924,884 2014-01-08
US201461928644P 2014-01-17 2014-01-17
US61/928,644 2014-01-17
US201461929874P 2014-01-21 2014-01-21
US61/929,874 2014-01-21
US14/313,960 US9029909B2 (en) 2013-06-24 2014-06-24 Systems, circuits, devices, and methods with bidirectional bipolar transistors
US14/313,960 2014-06-24
PCT/US2014/069611 WO2015089227A1 (en) 2013-12-11 2014-12-10 Systems and methods for bidirectional device fabrication

Publications (3)

Publication Number Publication Date
JP2017509136A JP2017509136A (ja) 2017-03-30
JP2017509136A5 JP2017509136A5 (OSRAM) 2018-01-11
JP6542775B2 true JP6542775B2 (ja) 2019-07-10

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JP2016538542A Active JP6542775B2 (ja) 2013-12-11 2014-12-10 双方向デバイス製造のためのシステムおよび方法

Country Status (5)

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EP (1) EP3055884B8 (OSRAM)
JP (1) JP6542775B2 (OSRAM)
CN (1) CN106062958B (OSRAM)
GB (1) GB2531485B (OSRAM)
WO (1) WO2015089227A1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872979A (zh) * 2019-02-14 2019-06-11 南通通富微电子有限公司 一种扇出型封装器件
US20250380436A1 (en) * 2024-06-11 2025-12-11 Ideal Power Inc. Methods of manufacturing bipolar junction devices

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US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique
GB2269938B (en) 1990-01-10 1994-09-07 Microunity Systems Eng Method of forming self-aligned contacts in a semi-conductor process
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JP2003158131A (ja) * 2001-09-04 2003-05-30 Sanken Electric Co Ltd 半導体素子の製造方法
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US7064069B2 (en) * 2003-10-21 2006-06-20 Micron Technology, Inc. Substrate thinning including planarization
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EP2901483B1 (en) * 2013-06-24 2016-09-07 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors

Also Published As

Publication number Publication date
GB2531485A (en) 2016-04-20
CN106062958B (zh) 2019-11-19
WO2015089227A1 (en) 2015-06-18
EP3055884A4 (en) 2016-12-07
GB2531485A8 (en) 2016-06-29
EP3055884B8 (en) 2023-04-26
EP3055884A1 (en) 2016-08-17
GB2531485B (en) 2016-06-22
EP3055884B1 (en) 2023-03-22
CN106062958A (zh) 2016-10-26
GB201602488D0 (en) 2016-03-30
JP2017509136A (ja) 2017-03-30

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