JP2017509136A5 - - Google Patents

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Publication number
JP2017509136A5
JP2017509136A5 JP2016538542A JP2016538542A JP2017509136A5 JP 2017509136 A5 JP2017509136 A5 JP 2017509136A5 JP 2016538542 A JP2016538542 A JP 2016538542A JP 2016538542 A JP2016538542 A JP 2016538542A JP 2017509136 A5 JP2017509136 A5 JP 2017509136A5
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JP
Japan
Prior art keywords
wafer
handle wafer
handle
temperature
introducing
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JP2016538542A
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English (en)
Japanese (ja)
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JP6542775B2 (ja
JP2017509136A (ja
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Priority claimed from US14/313,960 external-priority patent/US9029909B2/en
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Priority claimed from PCT/US2014/069611 external-priority patent/WO2015089227A1/en
Publication of JP2017509136A publication Critical patent/JP2017509136A/ja
Publication of JP2017509136A5 publication Critical patent/JP2017509136A5/ja
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Publication of JP6542775B2 publication Critical patent/JP6542775B2/ja
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JP2016538542A 2013-12-11 2014-12-10 双方向デバイス製造のためのシステムおよび方法 Active JP6542775B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201361914491P 2013-12-11 2013-12-11
US61/914,491 2013-12-11
US201461924884P 2014-01-08 2014-01-08
US61/924,884 2014-01-08
US201461928644P 2014-01-17 2014-01-17
US61/928,644 2014-01-17
US201461929874P 2014-01-21 2014-01-21
US61/929,874 2014-01-21
US14/313,960 US9029909B2 (en) 2013-06-24 2014-06-24 Systems, circuits, devices, and methods with bidirectional bipolar transistors
US14/313,960 2014-06-24
PCT/US2014/069611 WO2015089227A1 (en) 2013-12-11 2014-12-10 Systems and methods for bidirectional device fabrication

Publications (3)

Publication Number Publication Date
JP2017509136A JP2017509136A (ja) 2017-03-30
JP2017509136A5 true JP2017509136A5 (OSRAM) 2018-01-11
JP6542775B2 JP6542775B2 (ja) 2019-07-10

Family

ID=53371816

Family Applications (1)

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JP2016538542A Active JP6542775B2 (ja) 2013-12-11 2014-12-10 双方向デバイス製造のためのシステムおよび方法

Country Status (5)

Country Link
EP (1) EP3055884B8 (OSRAM)
JP (1) JP6542775B2 (OSRAM)
CN (1) CN106062958B (OSRAM)
GB (1) GB2531485B (OSRAM)
WO (1) WO2015089227A1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109872979A (zh) * 2019-02-14 2019-06-11 南通通富微电子有限公司 一种扇出型封装器件
US20250380436A1 (en) * 2024-06-11 2025-12-11 Ideal Power Inc. Methods of manufacturing bipolar junction devices

Family Cites Families (24)

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US5112761A (en) * 1990-01-10 1992-05-12 Microunity Systems Engineering Bicmos process utilizing planarization technique
GB2269938B (en) 1990-01-10 1994-09-07 Microunity Systems Eng Method of forming self-aligned contacts in a semi-conductor process
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
JP2003158131A (ja) * 2001-09-04 2003-05-30 Sanken Electric Co Ltd 半導体素子の製造方法
JP2004119498A (ja) * 2002-09-24 2004-04-15 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法
US7064069B2 (en) * 2003-10-21 2006-06-20 Micron Technology, Inc. Substrate thinning including planarization
DE102004005384B4 (de) 2004-02-03 2006-10-26 De Doncker, Rik W., Prof. Dr. ir. Bidirektionales, MOS-gesteuertes Halbleiterbauelement, Verfahren zu seinem Betreiben, Verfahren zu seiner Herstellung und seine Verwendung
JP4791704B2 (ja) * 2004-04-28 2011-10-12 三菱電機株式会社 逆導通型半導体素子とその製造方法
US7354809B2 (en) * 2006-02-13 2008-04-08 Wisconsin Alumi Research Foundation Method for double-sided processing of thin film transistors
EP2025051B1 (en) 2006-06-06 2014-12-31 Ideal Power Inc. Universal power converter
DE102007058952A1 (de) 2007-09-24 2009-04-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8093133B2 (en) 2008-04-04 2012-01-10 Semiconductor Components Industries, Llc Transient voltage suppressor and methods
US8163624B2 (en) * 2008-07-30 2012-04-24 Bowman Ronald R Discrete semiconductor device and method of forming sealed trench junction termination
KR20120130158A (ko) 2009-06-29 2012-11-29 아이디얼 파워 컨버터스, 인코포레이티드 에너지 전송 리액턴스를 단락시키는 크로바 스위치를 이용한 전력 전송 장치, 방법, 및 시스템
BR112012003612A2 (pt) 2009-08-17 2017-05-23 Ideal Power Converters Inc conversão de força com pseudofase acrescentada
EP2317553B1 (en) * 2009-10-28 2012-12-26 STMicroelectronics Srl Double-sided semiconductor structure and method for manufacturing the same
JP5379767B2 (ja) * 2010-09-02 2013-12-25 ＰＶＧ Ｓｏｌｕｔｉｏｎｓ株式会社 太陽電池セルおよびその製造方法
US9159825B2 (en) * 2010-10-12 2015-10-13 Silanna Semiconductor U.S.A., Inc. Double-sided vertical semiconductor device with thinned substrate
WO2012075172A2 (en) 2010-11-30 2012-06-07 Ideal Power Converters Inc. Photovoltaic array systems, methods, and devices and improved diagnostics and monitoring
CN102172826B (zh) * 2010-12-29 2012-11-28 杭州东华链条集团有限公司 一种正时链条的装配方法及装配装置
US20120279567A1 (en) 2011-02-18 2012-11-08 Ideal Power Converters Inc. Solar Energy System with Automatic Dehumidification of Electronics
US8531858B2 (en) 2011-02-18 2013-09-10 Ideal Power, Inc. Power conversion with current sensing coupled through saturating element
KR20130091200A (ko) * 2012-02-07 2013-08-16 삼성전자주식회사 트랜지스터 및 그 제조방법
EP2901483B1 (en) * 2013-06-24 2016-09-07 Ideal Power Inc. Systems, circuits, devices, and methods with bidirectional bipolar transistors

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