JP6508193B2 - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
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- 238000000034 method Methods 0.000 claims description 12
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- 239000000758 substrate Substances 0.000 description 21
- 238000003825 pressing Methods 0.000 description 17
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- 238000010438 heat treatment Methods 0.000 description 11
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- 238000010586 diagram Methods 0.000 description 10
- 229920005989 resin Polymers 0.000 description 7
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- 238000005245 sintering Methods 0.000 description 7
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- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- 239000002105 nanoparticle Substances 0.000 description 2
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- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
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- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
半導体装置の製造方法は、放熱部を備えた第1主面と、第1主面と対向する第2主面を有し、半導体チップを搭載した半導体ユニットを準備する工程を含んでよい。半導体装置の製造方法は、平坦面を有する冷却器を準備する工程を含んでよい。半導体装置の製造方法は、半導体ユニットの第1主面、もしくは冷却器の平坦面に金属ナノ粒子を含んだペーストを塗布する工程を含んでよい。半導体装置の製造方法は、ペーストを介して半導体ユニットの第1主面と冷却器の平坦面を接触させる工程を含んでよい。半導体装置の製造方法は、ペーストを昇温すると同時に半導体ユニットの第2主面に面内で均一な加圧力を加え、ペーストを焼結して接合層を形成する工程を含んでよい。
図1は、この発明に係る第1実施例の半導体装置100の構成図である。図1(a)は要部断面図、図1(b)は図1(a)の縦方向を拡大した金属板3cと冷却器2の接合部を拡大した断面図である。
図2〜図6は、この発明に係る第2実施例の半導体装置100の製造方法を工程順に示した要部工程図である。
2 冷却器
2a 冷却板
2b フィン
3 絶縁基板(放熱部)
3a 回路板
3b 絶縁板
3c 金属板
4 接合層
5 ペースト
6 金属ナノ粒子
7 有機膜
8 溶媒
9 加熱炉
11 モールド樹脂
12 外部端子
13 半導体チップ
14 はんだ
15 ワイヤ
20,20a,20b 加圧機構
21 加圧ブロック
22 受け皿
23 球
24,33 加圧棒
31 袋
32 カーボンパウダ
100 半導体装置
Claims (5)
- 放熱部を備えた第1主面と、前記第1主面と対向する第2主面を有し、半導体チップを搭載した半導体ユニットを準備する工程と、
平坦面を有する冷却器を準備する工程と、
前記半導体ユニットの第1主面、もしくは前記冷却器の平坦面に金属ナノ粒子を含んだペーストを塗布する工程と、
前記ペーストを介して前記半導体ユニットの第1主面と前記冷却器の平坦面を接触させる工程と、
前記ペーストを昇温すると同時に、パウダーが充填された柔軟性のある袋を介して、前記半導体ユニットの前記第2主面を押すことで、前記半導体ユニットの前記第2主面に面内で均一な加圧力を加え、前記ペーストを焼結して接合層を形成する工程と、
を含み、
前記半導体ユニットの準備工程において、前記放熱部を前記冷却器側に凸に反らせ、
前記接触させる工程において、前記放熱部の中央部を前記冷却器に直接接触させる半導体装置の製造方法。 - 前記加圧力は、前記第2主面の面内において±10%以内のばらつきであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記放熱部の周辺部と前記冷却器の間の隙間が、10μm以上、300μm以下であることを特徴とする請求項1または2に記載の半導体装置の製造方法。
- 前記加圧力が、5MPa以上、20MPa以下であることを特徴とする請求項1から3のいずれか一項に記載の半導体装置の製造方法。
- 前記昇温する温度が、150℃以上、350℃以下であることを特徴とする請求項1から4のいずれか一項に記載の半導体装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014047344 | 2014-03-11 | ||
JP2014047344 | 2014-03-11 | ||
PCT/JP2015/055237 WO2015137109A1 (ja) | 2014-03-11 | 2015-02-24 | 半導体装置の製造方法および半導体装置 |
Publications (2)
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JPWO2015137109A1 JPWO2015137109A1 (ja) | 2017-04-06 |
JP6508193B2 true JP6508193B2 (ja) | 2019-05-08 |
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JP2016507433A Active JP6508193B2 (ja) | 2014-03-11 | 2015-02-24 | 半導体装置の製造方法および半導体装置 |
Country Status (4)
Country | Link |
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US (1) | US9960097B2 (ja) |
JP (1) | JP6508193B2 (ja) |
CN (1) | CN105531818B (ja) |
WO (1) | WO2015137109A1 (ja) |
Families Citing this family (5)
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JP6524809B2 (ja) * | 2015-06-10 | 2019-06-05 | 富士電機株式会社 | 半導体装置 |
CN109103154A (zh) * | 2017-06-21 | 2018-12-28 | 华为技术有限公司 | 一种芯片封装结构 |
JP7174046B2 (ja) * | 2018-05-29 | 2022-11-17 | 京セラ株式会社 | 電子素子搭載用基板、電子装置および電子モジュール |
JP2020141056A (ja) * | 2019-02-28 | 2020-09-03 | トヨタ自動車株式会社 | 電力変換装置 |
CN115394689B (zh) * | 2022-09-05 | 2023-09-01 | 江苏富乐华功率半导体研究院有限公司 | 一种功率半导体器件热压烧结装置 |
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JPH0682850U (ja) * | 1993-05-10 | 1994-11-25 | 日本アビオニクス株式会社 | 面接着装置 |
JP3811407B2 (ja) * | 2002-01-15 | 2006-08-23 | 京セラ株式会社 | 半導体素子搭載用基板 |
JP2005332874A (ja) * | 2004-05-18 | 2005-12-02 | Hitachi Metals Ltd | 回路基板及びこれを用いた半導体装置 |
JP4793622B2 (ja) * | 2005-03-04 | 2011-10-12 | 日立金属株式会社 | セラミックス回路基板およびパワーモジュール並びにパワーモジュールの製造方法 |
JP4770533B2 (ja) * | 2005-05-16 | 2011-09-14 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP4728755B2 (ja) * | 2005-09-22 | 2011-07-20 | ハリマ化成株式会社 | 導電性接合の形成方法 |
JP4770379B2 (ja) * | 2005-10-13 | 2011-09-14 | 富士電機株式会社 | 金属部材の接合方法およびその組立治具 |
JP2006352166A (ja) * | 2006-09-22 | 2006-12-28 | Hitachi Chem Co Ltd | マルチチップ実装法 |
WO2009116136A1 (ja) | 2008-03-18 | 2009-09-24 | 株式会社応用ナノ粒子研究所 | 複合銀ナノペースト、その製法及びナノペースト接合方法 |
WO2009090748A1 (ja) | 2008-01-17 | 2009-07-23 | Applied Nanoparticle Laboratory Corporation | 複合銀ナノ粒子、その製法及び製造装置 |
JP2010232366A (ja) * | 2009-03-26 | 2010-10-14 | Honda Motor Co Ltd | パワーエレクトロニクス用デバイス |
US8491998B2 (en) | 2009-07-16 | 2013-07-23 | Applied Nanoparticle Laboratory Corporation | Composite nanometal paste of two-metallic-component type, bonding method, and electronic part |
JP5171777B2 (ja) * | 2009-09-30 | 2013-03-27 | 三菱電機株式会社 | 電力用半導体装置 |
JP5383717B2 (ja) * | 2011-01-04 | 2014-01-08 | 三菱電機株式会社 | 半導体装置 |
JP2013098451A (ja) * | 2011-11-04 | 2013-05-20 | Sumitomo Electric Ind Ltd | 半導体装置及び配線基板 |
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2015
- 2015-02-24 JP JP2016507433A patent/JP6508193B2/ja active Active
- 2015-02-24 CN CN201580001844.0A patent/CN105531818B/zh active Active
- 2015-02-24 WO PCT/JP2015/055237 patent/WO2015137109A1/ja active Application Filing
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2016
- 2016-03-14 US US15/069,329 patent/US9960097B2/en active Active
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CN105531818A (zh) | 2016-04-27 |
US20160197024A1 (en) | 2016-07-07 |
JPWO2015137109A1 (ja) | 2017-04-06 |
CN105531818B (zh) | 2019-07-05 |
US9960097B2 (en) | 2018-05-01 |
WO2015137109A1 (ja) | 2015-09-17 |
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