CN104392942A - 无压低温烧结纳米银焊膏封装大功率igbt器件的方法 - Google Patents

无压低温烧结纳米银焊膏封装大功率igbt器件的方法 Download PDF

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CN104392942A
CN104392942A CN201410619936.2A CN201410619936A CN104392942A CN 104392942 A CN104392942 A CN 104392942A CN 201410619936 A CN201410619936 A CN 201410619936A CN 104392942 A CN104392942 A CN 104392942A
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soldering paste
nano mattisolda
power igbt
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梅云辉
付善灿
陆国权
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Tianjin University
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Abstract

本发明涉及一种无压低温烧结纳米银焊膏封装大功率IGBT器件的方法。将纳米银焊膏印刷在衬板的焊接面上，印刷的形状呈十字架；将芯片放在已钢网印刷成型的纳米银焊膏上；对加热台设置250℃-270℃温度，进行烧结成型。实现低于2％的孔洞率。用该方法封装大功率IGBT模块不仅可以提高模块的使用性能，还可以简化封装工艺，同时保证芯片的粘接强度(30MP以上)仍能满足工作的使用需求以及保证焊膏层具有较低的孔洞率。同时，用该方法封装的大功率IGBT模块能有效的提高模块的工作效率及使用寿命。

Description

无压低温烧结纳米银焊膏封装大功率IGBT器件的方法
技术领域
本发明涉及功率电子器件封装技术领域，特别是一种无压低温烧结纳米银焊膏封装大功率IGBT器件的方法。
背景技术
IGBT模块主要应用在直流电压为600V及以上的变流系统如交流电机、变频器、开关电源、照明电路、牵引传动等领域。IGBT以其输进阻抗高、开关速度快、通态电压低、阻断电压高、承受电流大等特点，已成为当今功率半导体器件发展的主流器件。IGBT模块已被广泛应用于UPS、感应加热电源、逆变焊机电源和电机变频调速等电源领域，市场前景非常广阔。
IGBT模块作为电力电子系统的核心器件，它的性能参数直接决定着电力电子系统的性能和可靠性。而IGBT模块芯片封装的材料和质量对IGBT模块的散热性能和可靠性有着重要的影响，因此，在IGBT模块封装制造过程中，不断提升IGBT模块DBC基板和芯片的焊接质量，对提升IGBT模块的散热性能和可靠性有重要意义。
目前IGBT模块芯片封装使用的焊料合金，经过回流，焊料完全溶解形成粘接。但是冷却速率等的冷却过程，对生成的焊点在其微观组织和孔洞的出现方面都有直接的影响。而且，大功率IGBT模块的工作温度可达150℃以上，使用传统的焊料合金会制约该功率模块的高温工作能力，成为大功率IGBT模块应当的一大瓶颈。相对于焊料合金，纳米银焊膏具有高的熔点(960℃),低的烧结温度(275℃),高的热导率(240W·m-1·K-1)。而且，使用纳米银焊膏不仅可以提高芯片封装的使用性能，还可以简化封装工艺，同时保证芯片的粘接强度仍能满足工作的使用需求以及保证焊膏层具有较低的孔洞率。因此，用纳米银焊膏代替焊料合金能够更好的提高大功率IGBT模块的工作效率及使用寿命。但是现有的封装方法不能实现纳米银焊膏在无压烧结过程中，芯片的连接层仍具有较低的孔洞率(低于2％)，成为急需解决的一个问题。
发明内容
本发明所要解决的技术问题是一种无压低温(250℃-270℃)纳米银焊膏封装IGBT模块的方法，通过用纳米银焊膏作为连接材料，可以实现制备的芯片烧结-连接层较低的孔洞率(低于2％)。在纳米银焊膏低温烧结-连接过程中，芯片连接无需使用压力，节约制造成本
本发明的技术方案如下：
一种无压低温烧结纳米银焊膏封装大功率IGBT器件的方法，芯片的连接在250℃-270℃下进行；实现低于2％的孔洞率。
将纳米银焊膏印刷在衬板的焊接面上，印刷的形状呈十字架；将芯片放在已钢网印刷成型的纳米银焊膏上；对加热台设置250℃-270℃温度，进行烧结成型。
优选IGBT芯片和二极管芯片焊接在衬板的焊接面上之前，采用超声和等离子清洗衬板和基板表面的杂质。
优选纳米银焊膏十字架形状的覆盖面积占连接层总面积的30％-70％。
优选在烧结之前，挤压已钢网印刷成型的纳米银焊膏，使得纳米银焊膏均匀的铺展在芯片的下面。
优选烧结曲线是从常温升温到250℃-270℃，然后保温10min-30min，升温速率的范围是3℃-5℃/min。
与现有技术相比，本发明有以下优点：
本发明成功实现了纳米银焊膏对大功率IGBT模块的低温(250℃-270℃)、无压和低孔洞率(低于2％)封装。用该方法封装大功率IGBT模块不仅可以提高模块的使用性能，还可以简化封装工艺，同时保证芯片的粘接强度(30MP以上)仍能满足工作的使用需求以及保证焊膏层具有较低的孔洞率(低于2％)。同时，用该方法封装的大功率IGBT模块能有效的提高模块的工作效率及使用寿命。
附图说明
图1为本发明纳米银焊膏封装大功率IGBT模块的流程图；
图2为本发明衬板的示意图；
图3为本发明基板的示意图；
图4为未安装壳体的俯视结构示意图
图5为安装壳体的结构示意图。
其中：1-衬板、2-基板、3-IGBT芯片、4-二极管芯片、5-粗铝丝、6-电极、7-连接桥、8-管壳
具体实施方式
下面结合附图，对本发明的具体实施方式作详细说明。
碳化硅功率器件的封装方法(参考图1)，具体包括如下步骤：
步骤一、选择镀银的覆铜陶瓷板作为衬板材料，该衬板材料具有较高的热导率和热膨胀系数。见图2，衬板1为长方形。选择镀镍的铜板作为基板材料，该基板材料具有很好的导热性。见图3，基板2为长方形，略大于两块衬板1。采用超声波清洗和等离子清洗的方法衬板1和基板2表面的杂质。
步骤二、将大功率IGBT芯片和二极管芯片焊接在衬板1上。选用纳米银焊膏作为焊料，并采用丝网印刷技术将纳米银焊膏均匀涂在衬板1的焊接面上，采用烧结的技术实现大功率IGBT芯片3，二极管芯片4和衬板1的焊接。两组大功率IGBT芯片和二极管芯片对称焊接在衬板1的焊接面上。纳米银焊膏的印刷形状呈十字架，其面积为对应芯片面积的30％-70％。在烧结之前，芯片需要低的位移速率挤压已钢网印刷成型的纳米银焊膏，使得纳米银焊膏均匀的铺展在芯片的下面。
步骤三、引线键合。采用粗铝丝5实现大功率IGBT芯片3，二极管芯片4和衬板电极区连接。通过引线键合技术实现粗铝丝5的一端与大功率IGBT芯片3和二极管芯片4连接，另一端与衬板1电极区连接。
步骤四、将衬板1焊接在镀镍的铜基板上，同时将电极6和连接桥7焊接在衬板1上。选用的电极6和连接桥7的材料为镀银的铜，具有较高的电导率和机械性。焊接时，将SAC305焊片放在基板2的焊接面上，同时用SAC305焊片将电极6和连接桥7的焊接面处包裹住并放在衬板的电极焊接区上，然后采用真空回流焊的技术实现焊接(见图4)。
步骤五、涂胶，安装管壳8，见图5。涂抹的胶体采用的高温环氧树脂，它具有良好的耐高温性能及机械支撑和绝缘作用；管壳8采用的DAP塑料制成，其软化温度达到260℃以上，且具有很好的热循环能力和耐热疲劳能力。
步骤六、填充密闭剂，固化和打弯。密闭剂选用双组分硅胶，该硅胶在250℃能长期保持弹性，且具优良的电气性能和化学稳定性。填充完密闭剂，将模块放在真空干燥箱中，在150℃下保温1小时以实现硅胶的固化。打弯采用专用模具将电极6弯折成型(见图5)。
实例1：首先采用超声和等离子清洗衬板和基板表面的杂质。然后在衬板的焊接面上印刷十字架形状的焊膏。当十字架形状的覆盖面积占连接层总面积的30％时，贴上芯片并使得纳米银焊膏与芯片充分润湿直至焊膏均匀的铺展在芯片的四周。此时，连接层的厚度为丝网印刷焊膏层厚度的30％。然后进行烧结：从常温升温到250℃-270℃，然后保温10min-30min，升温速率为3-5℃/min。进行烧结成型后，孔洞率低于1％。
实例2：首先采用超声和等离子清洗衬板和基板表面的杂质。然后在衬板的焊接面上印刷十字架形状的焊膏。当十字架形状的覆盖面积占连接层总面积的50％时，贴上芯片并使得纳米银焊膏与芯片充分润湿直至焊膏均匀的铺展在芯片的四周。此时，连接层的厚度为丝网印刷焊膏层厚度的50％。然后进行烧结：从常温升温到250℃，然后保温30min，升温速率为5℃/min。烧结成型后，孔洞率在1％到1.5％之间。
实例3：首先采用超声和等离子清洗衬板和基板表面的杂质。然后在衬板的焊接面上印刷十字架形状的焊膏。当十字架形状的覆盖面积占连接层总面积的70％时，贴上芯片并使得纳米银焊膏与芯片充分润湿直至焊膏均匀的铺展在芯片的四周。此时，连接层的厚度为丝网印刷焊膏层厚度的70％。然后进行烧结：从常温升温到250℃，然后保温30min，升温速率为5℃/min。烧结成型后，孔洞率在1.5％到2％之间。
本发明的封装方案操作简单，它具有很好的热循环能力和耐热疲劳能力，同时电气连接性能也非常优越，具有极高的推广价值。

Claims (6)

1.一种无压低温烧结纳米银焊膏封装大功率IGBT器件的方法，其特征在于：将纳米银焊膏印刷在衬板的焊接面上，印刷的形状呈十字架；将芯片放在已钢网印刷成型的纳米银焊膏上；对加热板设置250℃-270℃温度，进行烧结成型。
2.如权利要求1所述的方法，其特征是IGBT芯片和二极管芯片焊接在衬板的焊接面上之前，采用超声和等离子清洗衬板和基板表面的杂质。
3.如权利要求1所述的方法，其特征是纳米银焊膏十字架形状的覆盖面积占连接层总面积的30％-70％。
4.如权利要求1所述的方法，其特征是在烧结之前，挤压已钢网印刷成型的纳米银焊膏，使得纳米银焊膏均匀的铺展在芯片的下面。
5.如权利要求1所述的方法，其特征是烧结曲线是从常温升温到250℃-270℃，然后保温10min-30min，升温速率的范围是3℃-5℃/min。
6.如权利要求1所述的方法，其特征是芯片的连接在250℃-270℃下进行；孔洞率低于2％。
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