CN105118790B - 一种碳化硅二极管的耐高温封装框架制备方法 - Google Patents
一种碳化硅二极管的耐高温封装框架制备方法 Download PDFInfo
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Abstract
一种碳化硅二极管的耐高温封装框架制备方法,属于半导体器件制造设备领域。其特征在于,低温烧结步骤的具体工艺曲线为:将利用纳米银膏黏着有碳化硅晶粒(4)的框架主体(1)放入真空焊接炉中,抽真空到50~55mbar时再充氮气,以10~12℃/min升温至150~155℃后保温2~4min,再连续升温至185~190℃后保温8~12min,再升温至270~275℃,抽真空充氮气至5bar~15bar保持10~15min确保粘接强度,然后进行冷却,即完成碳化硅晶粒(4)和框架主体(1)的焊接。本发明利用了两个焊接区(冷却区和加热区)配合特殊的温度曲线,而且焊接过程中加一定的压力,缩短了焊接时间,提高了生产效率。
Description
技术领域
一种碳化硅二极管的耐高温封装框架制备方法,属于半导体器件制造设备领域。
背景技术
随着微电子技术的发展,传统的硅和砷化镓半导体材料出于本身结构和特性的原因,在高温、高频、光电,大功率及抗辐射等方面越来越显示出其不足和局限性。众所周知,硅器件难以在PN结温度高于150℃的情况下正常工作,特别是当高的工作温度、大功率、高频、及强辐射环境条件下并存时,硅器件就无法“胜任”。
碳化硅具有禁带宽度大,击穿电场高,电子饱和漂移速度高,热导率大等良好特性,这就决定了它具有在高温、高压、高频等条件下工作的良好性质。但是传统二极管封装焊接用锡铅钎料在高温并充氮气的隧道炉下完成晶粒与金属支架连接,铅及其化合物对自然环境污染严重,对产线员工身体有损害。且碳化硅二极管晶粒结温可以到300℃~400℃仍能正常工作,而传统的焊接工艺熔点为200℃~300℃,且导电胶散热性能差,大大限制了碳化硅二极管器件的高温应用领域。
当利用传统纳米银膏的焊接工艺进行碳化硅二极管的晶粒焊接时,会由于碳化硅晶粒独特的脆性,导致晶粒破裂损坏。传统的方法是延缓升温速率,使碳化硅晶粒缓慢的适应温度的变化,以减少次品的产生。但是这种升温方式会造成能耗增大、生产效率降低。
发明内容
本发明要解决的技术问题是:克服现有技术的不足,提供一种器件的热阻小,耐高温,可靠性高、能耗小的碳化硅二极管的耐高温封装框架制备方法。
本发明解决其技术问题所采用的技术方案是:该碳化硅二极管的耐高温封装框架制备方法,其特征在于,封装框架的制备步骤包括:晶粒切割-丝网印刷-固晶-低温烧结-铜丝键合-塑封成型;
其中低温烧结步骤的具体工艺曲线为:将利用纳米银膏黏着有碳化硅晶粒的框架主体放入真空焊接炉中,抽真空到50~55mbar时再充氮气,以10~12℃/min升温至150~155℃后保温2~4min,再连续升温至185~190℃后保温8~12min,再升温至270~275℃,抽真空充氮气至5bar~15bar保持10~15min,确保粘接强度,然后进行冷却,即完成碳化硅晶粒和铜框架主体的焊接。
本发明在碳化硅二极管封装制作中,首先用丝网印刷机将纳米银膏注射于铜料片上,再用自动贴片机将碳化硅晶粒粘接在纳米银膏上,用夹具固定后送至真空焊接炉,在高温下抽真空烧结,完成碳化硅晶粒焊接。低温烧结工艺中利用压力控制来改变烧结效果,在升温阶段,利用50~55mbar的氮气压力,使得碳化硅晶粒能够承受10~12℃/min的升温速率而不破裂。在温度升至185~190℃后保温8~12min,可以更好地去除纳米银膏中的焊油等杂质。在升至最高温度时施加5bar~15bar的压力,能够在更短的时间内焊接牢固,且保证成品率。
所述的真空焊接炉分为隔离的冷却区和加热区,所述框架主体在冷却区内抽真空、充氮气,并升温至150~155℃保温后转移到加热区,加热区内始终保持预备170℃~185℃的温度,在加热区再连续升温至185~190℃后保温,再升温至270~275℃,抽真空充氮气保压保温,冷却时再转入预备温度为180~200℃冷却区自然冷却。本发明将真空焊接炉分为隔离的冷却区和加热区,两个区实现工艺的衔接,首先在冷却区内抽真空由室温加热,在升温至150~155℃后,直接转移至预备好高温的加热区,提高加热效率,同时在焊接完成后,直接由最高温度转入预备温度为180~200℃冷却区自然冷却,冷却效率提高。成功的利用两个焊接区(冷却区和加热区)缩短了焊接时间,提高了生产效率。
所述的封装框架包括框架主体,框架主体的前部设为辅助区,框架主体的后部设为固晶区,在固晶区上的纳米银膏焊接层通过低温烧结的方式将碳化硅晶粒焊接固定于框架上,碳化硅晶粒通过引线连接相应的引脚。纳米银膏不但导电效率更高,熔点也更高,本发明利用纳米银膏连接框架主体与晶粒,降低了热阻使产品具有耐高温、焊接良率高等优点,扩大了碳化硅二极管晶粒可耐高温特性的应用面,提高了产品生产良率。
所述的固晶区上通过纳米银膏焊接层左右对称各焊接有一个碳化硅晶粒。
所述的固晶区上通过纳米银膏焊接层仅焊接有一个碳化硅晶粒。根据碳化硅二极管的具体功能要求可以设计一个或两个碳化硅晶粒,均可采用纳米银膏焊接层相焊接,纳米银膏焊接层焊接牢固、传导能力更强,散热更快,能够承受更大的晶粒密度。
所述的辅助区为开有散热孔的散热区。实现良好的散热,保证碳化硅二极管的功能稳定。所述的辅助区为具有固定结构的固定区。实现碳化硅二极管的固定式辅助区的传统功能,可采用传统设计。辅助区在利用黑胶封装后仍保留在胶块外,以完成其辅助功能。
所述的框架主体和引脚均为铜质。本身耐高温能力更强,焊接更牢固。
所述的晶粒切割步骤的具体工艺为:先将整晶圆贴在UV膜上,UV膜粘度在5000mN~12000mN,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒表面并甩干。方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况。
所述的丝网印刷步骤的具体工艺为:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区内得到纳米银膏焊接层。
所述的固晶步骤的具体工艺为:用固晶机将碳化硅晶粒从UV光照射过的UV膜上吸取并放置在框架主体上;UV膜在光照之后粘度为900~1100mN。固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性。
所述的铜丝键合步骤的工艺为:采用超声铜丝键合工艺实现碳化硅晶粒和引脚的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒和引脚上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使铜丝和焊接点相互粘合而形成键合。传统二极管封装焊接主要采用金属支架焊接或铝丝键合焊接工艺,容易形成虚焊。本发明可采用铜丝超声键合工艺,在室温下仅在施加压力的同时,通过超声振动,分别完成铜丝与碳化硅晶粒和引脚键合焊接。提高连接引线的耐高温能力和传导能力,避免了传统的铝丝与铜引脚键合时材质不同导致的虚焊,提高生产良率。
所述的塑封成型步骤的具体工艺为:将塑封框架材料整齐摆放在载料架上,放入成型机台上合模,上下模温度均为160~180℃、合模压力为80~120kg/cm2,放入已预热的黑胶块,再转进30~50kg/cm2压力条件下175~185s,完成塑封成型。
与现有技术相比,本发明的一种碳化硅二极管的耐高温封装框架制备方法所具有的有益效果是:本发明采用纳米银焊膏将碳化硅晶粒固定于铜框架主体上,真空焊接炉在高温下抽真空烧结,完成碳化硅晶粒在铜框架主体上的固定,采用铜丝键合工艺完成碳化硅晶粒和引脚的连接,使用耐高温环氧树脂材料进行塑封成型制得。本发明利用纳米银焊膏连接框架主体与晶粒,降低了热阻使产品具有耐高温、焊接良率高等优点,扩大了碳化硅二极管晶粒可耐高温特性的应用面,提高了产品生产良率。本发明利用了两个焊接区(冷却区和加热区)配合特殊的温度曲线,而且焊接过程中加一定的压力,缩短了焊接时间,提高了生产效率。制得产品具体具有以下优点:
1、本发明利用纳米银焊膏的颗粒尺寸小、比表面积大、表面性能高等特性,实现低温封装、高温服役的电子封装。真空焊接炉保证了焊接空洞率<2%;
2、封装材料耐高温,银和铜的熔点均为1000℃左右,远大于碳化硅二极管的工作结温,且有很好的导电性和导热性,能承受更高温度的工作环境;
3、银和铜的电阻率低于锡和铝,降低了器件的封装电阻;
4、利用铜丝替代铝丝,解决了铝丝与铜框架主体不同材质焊接易虚焊的问题,提高了封装的可靠性。
附图说明
图1为本发明一种碳化硅二极管的耐高温封装框架制备方法的低温烧结步骤的具体工艺曲线示意图。
图2为本发明的一种碳化硅二极管的耐高温封装框架的俯视结构示意图。
图3为本发明的一种碳化硅二极管的耐高温封装框架的左视结构示意图。
其中,1、框架主体 2、固晶区 3、纳米银膏焊接层 4、碳化硅晶粒 5、引线 6、引脚。
具体实施方式
图2、3是本发明制得的碳化硅二极管的耐高温封装框架的最佳实施例,下面结合附图1、2对本发明制得的碳化硅二极管的耐高温封装框架做进一步说明。
参照附图2、3:本发明的一种碳化硅二极管的耐高温封装框架,包括框架主体1、固晶区2、纳米银膏焊接层3、碳化硅晶粒4、引线5和引脚6;框架主体1的前部为散热区或固定区,框架主体1的后部设为固晶区2,固晶区2上左右对称各设一矩形的纳米银膏焊接层3,提高焊接点的耐受温度,能够适应更高的工作环境,纳米银膏焊接层3上焊接有碳化硅晶粒4,碳化硅晶粒4通过各自连接的引线5连接相应的引脚6,引线5采用铜丝,利用铜丝提高与碳化硅晶粒4和引脚6的导电效率,减少放热,同时提高耐受温度;框架主体1和引脚6均为铜质。
其他实施方式1:基本结构和连接关系同上述附图1、2所示,不同的是固晶区2上设有一个纳米银膏焊接层3,纳米银膏焊接层3上焊接有一个碳化硅晶粒4和分别与左右引脚连接的引线5。
其他实施方式2:基本结构和连接关系同上述附图1、2所示,不同的是引线5的铜丝全部利用铝丝替代。
下面通过具体实施例并结合附图1对本发明的一种碳化硅二极管的耐高温封装框架制备方法做进一步说明,其中实施例1位最佳是实力。
实施例1
1)晶粒切割:先将整晶圆贴在UV膜上,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒4表面并甩干;此过程中使用的UV膜粘度很大,在8000mN~10000mN,方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况;
2)丝网印刷:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区2内得到纳米银膏焊接层3;
3)固晶:用固晶机将碳化硅晶粒4从UV光照射过的UV膜上吸取并放置在框架主体1上;UV膜在光照之后,粘度变低,降到1000mN,固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性;
4)低温烧结:将利用纳米银膏黏着碳化硅晶粒4的框架主体1放入真空焊接炉冷却区中,抽真空到50mbar时再充氮气,以10℃/min升温至150℃后保温2min,将焊接材料转移到加热区,加热区内始终保持预备180℃的温度,加热区升温至187℃后保温10min,再升温至270℃,抽真空充氮气至10bar保持10min确保粘接强度,材料转移至冷却区约200℃进行冷却,完成碳化硅晶粒4和铜框架主体1的焊接;
5)铜丝键合:采用超声铜丝键合工艺实现碳化硅晶粒4和引脚6的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒4和引脚6上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使铜丝和焊接点相互粘合而形成键合;
6)塑封成型:将材料整齐摆放在载料架上,放入成型机台(上下模温度170℃)上合模(合模压力100kg/cm2),放入已预热的黑胶块,再转进45kg/cm2压力条件下180s,完成塑封成型,压模后材料需烘烤5小时。
实施例2
1)晶粒切割:先将整晶圆贴在UV膜上,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒4表面并甩干;此过程中使用的UV膜粘度很大,在10000mN~11000mN,方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况;
2)丝网印刷:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区2内得到纳米银膏焊接层3;
3)固晶:用固晶机将碳化硅晶粒4从UV光照射过的UV膜上吸取并放置在框架主体1上;UV膜在光照之后,粘度变低,会降到1050mN左右,固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性;
4)低温烧结:将利用纳米银膏黏着碳化硅晶粒4的框架主体1放入真空焊接炉冷却区中,抽真空到53mbar时再充氮气,以11℃/min升温至153℃后保温2min,时将焊接材料转移到加热区,加热区内始终保持预备175℃的温度,加热区升温至190℃后保温10min,再升温至270~275℃,抽真空充氮气至5bar~15bar保持10~15min确保粘接强度,材料转移至冷却区约200℃进行冷却,完成碳化硅晶粒4和框架主体1的焊接;
5)铜丝键合:采用超声铜丝键合工艺实现碳化硅晶粒4和引脚6的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒4和引脚6上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使引线5和焊接点相互粘合而形成键合;
6)塑封成型:将材料整齐摆放在载料架上,放入成型机台(上下模温度165℃)上合模(合模压力90kg/cm2),放入已预热的黑胶块,再转进40kg/cm2压力条件下182s,完成塑封成型,压模后材料需烘烤5小时。
实施例3
1)晶粒切割:先将整晶圆贴在UV膜上,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒4表面并甩干;此过程中使用的UV膜粘度很大,在7000mN~9000mN,方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况;
2)丝网印刷:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区2内得到纳米银膏焊接层3;
3)固晶:用固晶机将碳化硅晶粒4从UV光照射过的UV膜上吸取并放置在框架主体1上;UV膜在光照之后,粘度变低,会降到900mN左右,固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性;
4)低温烧结:将利用纳米银膏黏着碳化硅晶粒4的框架主体1放入真空焊接炉冷却区中,抽真空到54mbar时再充氮气,以10℃/min升温至150℃后保温2min,时将焊接材料转移到加热区,加热区内始终保持预备178℃的温度,加热区升温至188℃后保温9min,再升温至272℃,抽真空充氮气至12bar保持12min确保粘接强度,材料转移至冷却区约200℃进行冷却,完成碳化硅晶粒4和框架主体1的焊接;
5)铜丝键合:采用超声铜丝键合工艺实现碳化硅晶粒4和引脚6的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒4和引脚6上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使铜丝和焊接点相互粘合而形成键合;
6)塑封成型:将材料整齐摆放在载料架上,放入成型机台(上下模温度175℃)上合模(合模压力110kg/cm2),放入已预热的黑胶块,再转进45kg/cm2压力条件下178s,完成塑封成型,压模后材料需烘烤6小时。
实施例4
1)晶粒切割:先将整晶圆贴在UV膜上,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒4表面并甩干;此过程中使用的UV膜粘度很大,在5000mN~7000mN,方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况;
2)丝网印刷:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区2内得到纳米银膏焊接层3;
3)固晶:用固晶机将碳化硅晶粒4从UV光照射过的UV膜上吸取并放置在框架主体1上;UV膜在光照之后,粘度变低,会降到900mN左右,固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性;
4)低温烧结:将利用纳米银膏黏着碳化硅晶粒4的框架主体1放入真空焊接炉冷却区中,抽真空到55mbar时再充氮气,以10℃/min升温至150℃后保温2min,时将焊接材料转移到加热区,加热区内始终保持预备185℃的温度,加热区升温至190℃后保温8min,再升温至275℃,抽真空充氮气至5bar保持10min确保粘接强度,材料转移至冷却区约190℃进行冷却,完成碳化硅晶粒4和框架主体1的焊接;
5)铜丝键合:采用超声铜丝键合工艺实现碳化硅晶粒4和引脚6的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒4和引脚6上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使铜丝和焊接点相互粘合而形成键合;
6)塑封成型:将材料整齐摆放在载料架上,放入成型机台(上下模温度160℃)上合模(合模压力120kg/cm2),放入已预热的黑胶块,再转进50kg/cm2压力条件下175s,完成塑封成型,压模后材料需烘烤4小时。
实施例5
1)晶粒切割:先将整晶圆贴在UV膜上,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒4表面并甩干;此过程中使用的UV膜粘度很大,在10000mN~12000mN,方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况;
2)丝网印刷:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区2内得到纳米银膏焊接层3;
3)固晶:用固晶机将碳化硅晶粒4从UV光照射过的UV膜上吸取并放置在框架主体1上;UV膜在光照之后,粘度变低,会降到1100mN左右,固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性;
4)低温烧结:将利用纳米银膏黏着碳化硅晶粒4的框架主体1放入真空焊接炉冷却区中,抽真空到50mbar时再充氮气,以12℃/min升温至155℃后保温3min,时将焊接材料转移到加热区,加热区内始终保持预备170℃的温度,加热区升温至185℃后保温12min,再升温至270℃,抽真空充氮气至15bar保持10min确保粘接强度,材料转移至冷却区180℃进行冷却,完成碳化硅晶粒4和框架主体1的焊接;
5)铜丝键合:采用超声铜丝键合工艺实现碳化硅晶粒4和引脚6的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒4和引脚6上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使铜丝和焊接点相互粘合而形成键合;
6)塑封成型:将材料整齐摆放在载料架上,放入成型机台(上下模温度180℃)上合模(合模压力80kg/cm2),放入已预热的黑胶块,再转进30kg/cm2压力条件下约185s,完成塑封成型,压模后材料需烘烤7小时。
实施例6
1)晶粒切割:先将整晶圆贴在UV膜上,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒4表面并甩干;此过程中使用的UV膜粘度很大,在8000mN~10000mN,方便晶粒切割及清洗,不会出现晶粒移位、碰伤情况;
2)丝网印刷:用丝网印刷机将纳米银膏均匀刷在铜框架上的固晶区2内得到纳米银膏焊接层3;
3)固晶:用固晶机将碳化硅晶粒4从UV光照射过的UV膜上吸取并放置在框架主体1上;UV膜在光照之后,粘度变低,会降到1000mN左右,固晶制作晶粒时吸取容易,不易粘连残胶降低焊接良率,提高了封装可靠性;
4)低温烧结:将利用纳米银膏黏着碳化硅晶粒4的框架主体1放入单一区的真空焊接炉中,抽真空到50mbar时再充氮气,以10℃/min升温至150℃后保温4min,再升温至185~190℃后保温12min,再升温至270℃,抽真空充氮气至10bar保持10min确保粘接强度,材料在真空焊接炉自然冷却,完成碳化硅晶粒4和框架主体1的焊接;
5)铜丝键合:采用超声铜丝键合工艺实现碳化硅晶粒4和引脚6的连接,室温下在键合工具超声震动和键合压力(键合功率约为4~6N)的作用下,铜丝引线5分别与碳化硅晶粒4和引脚6上的焊接点在摩擦力的作用下暴露出纯净的金属表面,并发生强烈的原子扩散和塑性流动,使铜丝和焊接点相互粘合而形成键合;
6)塑封成型:将材料整齐摆放在载料架上,放入成型机台(上下模温度160~180℃)上合模(合模压力100kg/cm2),放入已预热的黑胶块,再转进40kg/cm2压力条件下180s,完成塑封成型,压模后材料需烘烤8小时。
对比例1
基本工艺步骤和工艺条件同实施例6,不同的是步骤4)低温烧结中不再充氮气加压。
本发明各实施例的产品良率在99.98%以上,充分的保证的成品率,防止碳化硅晶粒4的开裂损坏,碳化硅晶粒4的焊接强度同传统缓慢升温(升温速率在0.25~2℃/min)工艺相当甚至更高。但是焊接、冷却时间只有原来的十分之一,大大的提高了焊接效率。对比例1中,在没有适当大小的加压氮气保护的情况下,产品良率只有19.8%,半量以上的碳化硅晶粒4发生开裂,另有25.4%虽然勉强完成焊接,但在没有压力的情况下,在短短10min内,无法完成碳化硅晶粒4与框架主体1的充分焊接,剥离强度很小,容易脱落,无法满足正常使用。
以上所述,仅是本发明的较佳实施例而已,并非是对本发明作其它形式的限制,任何熟悉本专业的技术人员可能利用上述揭示的技术内容加以变更或改型为等同变化的等效实施例。但是凡是未脱离本发明技术方案内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与改型,仍属于本发明技术方案的保护范围。
Claims (9)
1.一种碳化硅二极管的耐高温封装框架制备方法,其特征在于,封装框架的制备步骤包括:晶粒切割-丝网印刷-固晶-低温烧结-铜丝键合-塑封成型;
其中低温烧结步骤的具体工艺曲线为:将利用纳米银膏黏着有碳化硅晶粒(4)的框架主体(1)放入真空焊接炉中,抽真空到50~55mbar时再充氮气,以10~12℃/min升温至150~155℃后保温2~4min,再连续升温至185~190℃后保温8~12min,再升温至270~275℃,抽真空充氮气至5bar~15bar保持10~15min,确保粘接强度,然后进行冷却,即完成碳化硅晶粒(4)和框架主体(1)的焊接。
2.根据权利要求1所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的真空焊接炉分为隔离的冷却区和加热区,所述框架主体(1)在冷却区内抽真空、充氮气,并升温至150~155℃保温后转移到加热区,加热区内始终保持预备170℃~185℃的温度,在加热区再连续升温至185~190℃后保温,再升温至270~275℃,抽真空充氮气保压保温,冷却时再转入预备温度为180~200℃冷却区自然冷却。
3.根据权利要求1所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的封装框架包括框架主体(1),框架主体(1)的前部设为辅助区,框架主体(1)的后部设为固晶区(2),在固晶区(2)上的纳米银膏焊接层(3)通过低温烧结的方式将碳化硅晶粒(4)焊接固定于框架上,碳化硅晶粒(4)通过引线(5)连接相应的引脚(6)。
4.根据权利要求3所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的固晶区(2)上通过纳米银膏焊接层(3)左右对称各焊接有一个碳化硅晶粒(4)。
5.根据权利要求3所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的固晶区(2)上通过纳米银膏焊接层(3)仅焊接有一个碳化硅晶粒(4)。
6.根据权利要求3所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的辅助区为开有散热孔的散热区。
7.根据权利要求1所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的晶粒切割步骤的具体工艺为:先将整晶圆贴在UV膜上,UV膜粘度在5000mN~12000mN,使用激光切割机沿晶粒切割道位置划开碳化硅晶粒,取出用纯水清洗碳化硅晶粒(4)表面并甩干。
8.根据权利要求1所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的固晶步骤的具体工艺为:用固晶机将碳化硅晶粒(4)从UV光照射过的UV膜上吸取并放置在框架主体(1)上;UV膜在光照之后粘度为900~1100mN。
9.根据权利要求1所述的一种碳化硅二极管的耐高温封装框架制备方法,其特征在于:所述的塑封成型步骤的具体工艺为:将塑封框架材料整齐摆放在载料架上,放入成型机台上合模,上下模温度均为160~180℃、合模压力为80~120kg/cm2,放入已预热的黑胶块,再转进30~50kg/cm2压力条件下175~185s,完成塑封成型。
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