CN107154389A - 一种高散热能力的小型贴片固态继电器及其制造方法 - Google Patents
一种高散热能力的小型贴片固态继电器及其制造方法 Download PDFInfo
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- CN107154389A CN107154389A CN201710197330.8A CN201710197330A CN107154389A CN 107154389 A CN107154389 A CN 107154389A CN 201710197330 A CN201710197330 A CN 201710197330A CN 107154389 A CN107154389 A CN 107154389A
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 230000002457 bidirectional effect Effects 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 19
- 239000004033 plastic Substances 0.000 claims abstract description 15
- 229920003023 plastic Polymers 0.000 claims abstract description 15
- 238000004806 packaging method and process Methods 0.000 claims abstract description 12
- 239000004593 Epoxy Substances 0.000 claims abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 238000005538 encapsulation Methods 0.000 abstract description 4
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- 238000010586 diagram Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 2
- 206010054949 Metaplasia Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 238000009434 installation Methods 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710197330.8A CN107154389B (zh) | 2017-03-29 | 2017-03-29 | 一种高散热能力的小型贴片固态继电器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710197330.8A CN107154389B (zh) | 2017-03-29 | 2017-03-29 | 一种高散热能力的小型贴片固态继电器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN107154389A true CN107154389A (zh) | 2017-09-12 |
CN107154389B CN107154389B (zh) | 2023-07-21 |
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CN201710197330.8A Active CN107154389B (zh) | 2017-03-29 | 2017-03-29 | 一种高散热能力的小型贴片固态继电器及其制造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108470689A (zh) * | 2018-06-06 | 2018-08-31 | 捷捷半导体有限公司 | 一种塑封小型固态继电器及其制造方法 |
CN108766947A (zh) * | 2018-07-26 | 2018-11-06 | 苏州固锝电子股份有限公司 | 具有散热功能的功率器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216426A (ja) * | 1999-01-26 | 2000-08-04 | Sharp Corp | 光結合素子 |
US20030011054A1 (en) * | 2001-06-11 | 2003-01-16 | Fairchild Semiconductor Corporation | Power module package having improved heat dissipating capability |
US6548880B1 (en) * | 1999-08-13 | 2003-04-15 | Nec Compound Semiconductor Devices, Ltd. | Optical semiconductor device and a method of manufacturing the same |
JP2010034104A (ja) * | 2008-07-25 | 2010-02-12 | Panasonic Electric Works Co Ltd | 光結合型半導体リレー |
CN202906868U (zh) * | 2012-10-19 | 2013-04-24 | 陕西群力电工有限责任公司 | 无引线大功率光mos固体继电器 |
CN206774518U (zh) * | 2017-03-29 | 2017-12-19 | 江苏捷捷微电子股份有限公司 | 一种高散热能力的小型贴片固态继电器 |
-
2017
- 2017-03-29 CN CN201710197330.8A patent/CN107154389B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216426A (ja) * | 1999-01-26 | 2000-08-04 | Sharp Corp | 光結合素子 |
US6548880B1 (en) * | 1999-08-13 | 2003-04-15 | Nec Compound Semiconductor Devices, Ltd. | Optical semiconductor device and a method of manufacturing the same |
US20030011054A1 (en) * | 2001-06-11 | 2003-01-16 | Fairchild Semiconductor Corporation | Power module package having improved heat dissipating capability |
JP2010034104A (ja) * | 2008-07-25 | 2010-02-12 | Panasonic Electric Works Co Ltd | 光結合型半導体リレー |
CN202906868U (zh) * | 2012-10-19 | 2013-04-24 | 陕西群力电工有限责任公司 | 无引线大功率光mos固体继电器 |
CN206774518U (zh) * | 2017-03-29 | 2017-12-19 | 江苏捷捷微电子股份有限公司 | 一种高散热能力的小型贴片固态继电器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108470689A (zh) * | 2018-06-06 | 2018-08-31 | 捷捷半导体有限公司 | 一种塑封小型固态继电器及其制造方法 |
CN108766947A (zh) * | 2018-07-26 | 2018-11-06 | 苏州固锝电子股份有限公司 | 具有散热功能的功率器件 |
CN108766947B (zh) * | 2018-07-26 | 2024-01-26 | 苏州固锝电子股份有限公司 | 具有散热功能的功率器件 |
Also Published As
Publication number | Publication date |
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CN107154389B (zh) | 2023-07-21 |
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Legal Events
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20180131 Address after: Chongchuan District 226017 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Park Building 3, room 2159, R & D Applicant after: JIEJIE SEMICONDUCTOR CO.,LTD. Address before: No. 8 Xinglong Road, Qidong science and Technology Pioneer Park, Nantong, Jiangsu Province Applicant before: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 226200 Jinggangshan Road, Jinggangshan Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province, No. 6 Applicant after: JIEJIE SEMICONDUCTOR CO.,LTD. Address before: Chongchuan District 226017 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Park Building 3, room 2159, R & D Applicant before: JIEJIE SEMICONDUCTOR CO.,LTD. |
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