CN208077964U - 高功率密度塑封式ipm模块的封装结构 - Google Patents
高功率密度塑封式ipm模块的封装结构 Download PDFInfo
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Abstract
本实用新型涉及一种高功率密度塑封式IPM模块的封装结构,其结构包括上表面图形化生长石墨烯的直接敷铜基板、MOSFET芯片、快速恢复二极管芯片、驱动芯片、印刷电路板、焊料层、石墨烯填充增强导热银胶、键合引线、引线框架、塑封外壳、石墨烯填充增强封装树脂。其中采用化学气相沉积法在直接敷铜基板上表面图形化生长石墨烯薄膜,通过发挥其优异的面内热传导性能,将高功率密度塑封式IPM模块的局部热点热量迅速横向传开,进而通过直接敷铜基板向外传导,降低模块最高温度。同时采用石墨烯填充增强导热胶及封装树脂,改善传统封装材料的热传导性能,有效提高模块的可靠性。
Description
技术领域
本实用新型属于半导体技术领域,具体涉及一种高功率密度塑封式IPM模块的封装结构。
背景技术
智能功率模块(IPM)是一种将电力电子和集成电路技术结合的功率驱动类产品,它把功率半导体芯片与控制电路、驱动电路、过压、过流、过热和欠压保护电路以及自诊断电路组合,并密封在同一绝缘外壳内的智能化电力半导体模块。
智能功率模块的封装结构是由多种不同热膨胀系数的材料组成,智能功率模块工作时,高温不仅可能引起芯片的过热失效,也可能因为模块材料间的热失配引起机械失效。高温下,层间界面热应力和端部处的热应力集中常常会造成基板、芯片断裂或者焊料层形变甚至封装结构的脱层破坏最终导致封装结构的失效。
实用新型内容
为了解决现有技术问题,本实用新型的目的在于克服已有技术存在的不足,提供一种高功率密度塑封式IPM模块的封装结构,将石墨烯材料分别以散热薄膜形式应用于直接敷铜(DBC)基板上表面,与快速恢复二极管(FRD)芯片的阴极和MOSFET芯片的漏极位置对应,加速局部热点热量的横向传导,同时将石墨烯粉末以导热填料形式应用于导热胶中,减小驱动芯片和印刷电路板(PCB)之间的热阻,石墨烯粉末填充增强封装树脂,提高封装材料的整体热传导能力,解决高功率密度塑封式IPM模块的封装可靠性问题。
为达到上述目的,本实用新型采用下述技术方案。所述的高功率密度塑封式IPM模块的封装结构包括:驱动芯片上表面的电路输出端与印刷电路板上表面的对应焊盘引线键合,驱动芯片下表面由石墨烯填充增强导热银胶与印刷电路板互连;还包括直接敷铜基板,其上表面具有第一铜层,其下表面具有第二铜层,在直接敷铜基板第一铜层上对应快速恢复二极管芯片阴极的位置制作有第一石墨烯薄膜,在直接敷铜基板第一铜层上对应MOSFET芯片漏极的位置制作有第二石墨烯薄膜;所述第一铜层与快速恢复二极管芯片的阴极、MOSFET芯片的漏极通过焊料层互连,所述焊料层将第一石墨烯薄膜、第二石墨烯薄膜包裹在内;由外壳将所述驱动芯片、印刷电路板、直接敷铜基板、MOSFET芯片、快速恢复二极管芯片及所有键合引线封装起来。
进一步的,所述外壳内部由石墨烯填充增强环氧树脂进行灌封。
所述的高功率密度塑封式IPM模块的封装结构还包括引线框架,由焊料层与直接敷铜基板上表面第一铜层以及印刷电路板上表面输出引出端互连。
进一步的,所述快速恢复二极管芯片上表面阳极与引线框架的对应位置用第一铝线组键合,快速恢复二极管芯片下表面阴极由焊料层与直接敷铜基板的上表面图形化互连。
进一步的,所述MOSFET芯片上表面源极与快速恢复二极管芯片的阳极用第二铝线组键合,MOSFET芯片栅极与印刷电路板上表面的栅极驱动引出端用第三铝线组键合,MOSFET芯片下表面漏极由焊料层与直接敷铜基板的上表面图形化互连。
进一步的,所述引线框架局部伸出外壳。
本实用新型与现有技术相比较,具有如下优点:
1、本实用新型在DBC基板上表面图形化生长石墨烯薄膜,作为散热辅助层,避免了石墨烯薄膜转移工艺对其热导率的影响,加强基板与石墨烯薄膜的结合力,提升基板整体的热传导能力,改善器件之间的温度差异性,对于高功率密度塑封式IPM模块的局部高热流热点是非常有效的热管理方案;
2、本实用新型以石墨烯粉末作为导热颗粒,填充到导热银胶中,借助二维材料自身的优异热导率,减小驱动芯片与PCB板之间的热阻,填充到封装树脂中,提高封装材料的整体导热性能,在高热流密度的大功率塑封式IPM模块中满足可靠性需求。
附图说明
图1是本实用新型实施例DBC基板上表面图形化生长石墨烯薄膜的结构示意图。
图2是本实用新型实施例DBC基板上表面用于与芯片互连的焊料层位置示意图。
图3是本实用新型实施例DBC基板上表面与MOSFET/FRD芯片下表面互连的结构示意图。
图4是本实用新型实施例的封装结构截面示意图。
图5是本实用新型实施例MOSFET芯片上表面栅极与PCB板上表面互连的结构示意图。
图6是本实用新型实施例的加工工艺流程图。
图7是本实用新型工艺实施步骤3中的PCB板导热银胶涂敷位置示意图。
具体实施方式
下面结合附图和实施例对本实用新型作进一步说明。
本实用新型提出了一种高功率密度塑封式IPM模块的封装结构,总体包括:上表面图形化生长石墨烯薄膜的DBC基板、MOSFET芯片、FRD芯片、驱动芯片、PCB板、焊料层、石墨烯填充增强导热胶、键合引线、引线框架、塑封外壳、石墨烯填充增强封装树脂。
参见图1,采用化学气相沉积法在DBC基板12上表面FRD芯片16阴极对应的连接区中心位置上图形化生长第一石墨烯薄膜30,DBC基板12上表面MOSFET芯片15漏极对应的连接区中心位置上图形化生长第二石墨烯薄膜31。第一石墨烯薄膜30和第二石墨烯薄膜31在DBC基板12上表面通过发挥其优异的面内热传导性能,将高功率密度塑封式IPM模块的局部热点热量迅速横向传开,进而通过DBC基板12向外传导,降低模块最高温度。
参见图2,采用丝网印刷,在DBC基板12上表面FRD芯片16阴极对应的连接区位置和MOSFET芯片15漏极对应的连接区位置上涂覆焊料层14。
参见图3,将FRD芯片16与MOSFET芯片15贴装在DBC基板12上表面对应位置,第一石墨烯薄膜30正好位于FRD芯片16阴极下方的焊料中,第二石墨烯薄膜31正好位于MOSFET芯片15漏极下方的焊料中。
本实用新型提出的高功率密度塑封式IPM模块的封装结构截面示意图如图4所示。在DBC基板12上表面第一铜层13的输出引出端对应位置和PCB板19上输出引出端28上涂覆焊料层14,并将引线框架25贴装在对应位置上。通过真空回流焊接,完成FRD芯片16、MOSFET芯片15和引线框架25与DBC基板12上表面第一铜层13、引线框架25与PCB板19之间的互连。在PCB板19上表面驱动芯片17对应位置上涂覆石墨烯填充增强导热银胶18,通过固化完成驱动芯片17与PCB板19之间的互连。将FRD芯片16上表面阳极与引线框架25的对应位置用第一铝线组24键合,将MOSFET芯片15上表面源极与FRD芯片16的阳极用第二铝线组23键合,栅极与PCB板上表面的栅极驱动引出端20用第三铝线组22键合,参见图5。将驱动芯片17上表面的电路输出端与PCB板19上表面对应的焊盘20(多个)用金线组21键合。同时采用石墨烯填充增强环氧树脂26作为封装材料,在塑料外壳29中进行注塑灌封,改善传统封装树脂的热传导性能,有效提高模块的可靠性。
综上,本实用新型提出的高功率密度塑封式IPM模块的封装结构包括:驱动芯片17上表面的电路输出端与印刷电路板19上表面的对应焊盘引线键合,驱动芯片17下表面由石墨烯填充增强导热银胶18与印刷电路板19互连;还包括直接敷铜基板12,其上表面具有第一铜层13,其下表面具有第二铜层11,在直接敷铜基板12第一铜层13上对应快速恢复二极管芯片16阴极的位置制作有第一石墨烯薄膜30,在直接敷铜基板12第一铜层13上对应MOSFET芯片15漏极的位置制作有第二石墨烯薄膜31;所述第一铜层13与快速恢复二极管芯片16的阴极、MOSFET芯片15的漏极通过焊料层14互连,所述焊料层14将第一石墨烯薄膜30、第二石墨烯薄膜31包裹在内;由外壳29将所述驱动芯片17、印刷电路板19、直接敷铜基板12、MOSFET芯片15、快速恢复二极管芯片16及所有键合引线封装起来。
上述高功率密度塑封式IPM模块的一种加工工艺,其工艺流程如图6所示,包括DBC基板基于石墨烯的预处理、DBC/PCB焊料涂覆、MOSFET/FRD芯片贴装、DBC/PCB/引线框架组装、焊接并清洗、石墨烯填充增强导热银胶涂覆、驱动芯片贴装、固化并清洗、铝线键合、金线键合、石墨烯填充增强树脂注塑、固化封装、电镀、切筋成型、电学测试和包装。该加工工艺具体步骤包括:
步骤1、如图1所示,对DBC基板12进行预处理,在DBC基板12上表面FRD芯片16对应的阴极连接区中心位置上,采用化学气相沉积法生长方形石墨烯薄膜30;同时,在DBC基板12上表面MOSFET芯片15对应的漏极连接区中心位置上,生长方形石墨烯薄膜31。图形化生长的石墨烯薄膜尺寸在8-10层的范围内,总体平均厚度约2.5~3nm,作为散热辅助层,避免了石墨烯薄膜转移工艺对其热导率的影响,加强DBC基板12与石墨烯薄膜的结合力,提升DBC基板12整体的热传导能力。
步骤2、在DBC基板12和PCB板上采用丝网印刷机按图形涂覆焊料,如图2所示,在DBC基板12上表面FRD芯片16对应的阴极连接区位置上,以及MOSFET芯片15对应的漏极连接区位置上,涂覆焊料层14,厚度100μm,将第一石墨烯薄膜30、第二石墨烯薄膜31包裹在内,用于MOSFET芯片15和FRD芯片16与DBC基板12的焊接互连;同时,在PCB板19上表面的输出引出端28相应位置及DBC基板12上表面13的相应位置上涂覆焊料层14,如图4所示,用于与引线框架25的焊接互连;从而实现驱动芯片17的控制信号连接以及MOSFET芯片15和FRD芯片16的输出信号连接。将MOSFET芯片15、FRD芯片16按照对应位置贴装在DBC基板12上,第二石墨烯薄膜31正好位于MOSFET芯片15漏极下方的焊料中,第一石墨烯薄膜30正好位于FRD芯片16阴极下方的焊料中,使芯片局部热点热量通过石墨烯薄膜迅速横向传开,进而通过DBC基板12向外散发。将DBC基板12、PCB板与引线框架25放入工装中进行真空焊接,完成后使用超声波清洗机,在100W功率下对助焊剂进行清洗去除。
步骤3、在PCB板19上驱动芯片17对应的位置上涂覆石墨烯填充增强的导热银胶18,厚度100μm,用于驱动芯片17与PCB板19的连接。石墨烯自身的高导热性能,填充到导热胶基体中,可以显著提高导热银胶的热导率,减小驱动芯片17与PCB板19之间的互连热阻。将驱动芯片17按照对应位置,如图7所示,贴装在PCB板19上,在烘箱中依次以100℃下30min,130℃下90min的温度曲线加热,使导热银胶固化。完成后使用等离子清洗机对MOSFET芯片15、FRD芯片16和驱动芯片17,以及DBC基板12和PCB板表面的污染物进行清洗去除,为下一步键合工作做准备。
步骤4、在粗铝线键合机上将MOSFET芯片15的源极与FRD芯片16的阳极采用第二铝线组23键合,将FRD芯片16的阳极与引线框架25上的对应位置采用第一铝线组24键合;在细铝线键合机上将MOSFET芯片15的栅极与PCB板19上栅极驱动引出端20采用第三铝线组22键合,如图5所示;使用金线键合机将驱动芯片17的电路引出端与PCB板19上表面对应的焊盘20用金线组21键合,用于驱动芯片17与PCB板19的连接。
步骤5、采用石墨烯填充增强环氧树脂26对IPM模块的整个结构进行注塑封装,石墨烯的填充可以有效提高树脂基体的导热性能,减小整个封装结构的纵向热阻。将石墨烯填充增强的树脂封装结构在烘箱内依次以80℃下30min,100℃下120min,120℃下60min的温度曲线加热固化,完成后在引线框架焊接处电镀镍锡,去除注塑溢料,将引线框架切除及折弯,对塑封式IPM模块的静态特性、动态特性以及绝缘特性等进行测试,最后进行包装。
以上所述仅为本实用新型的较佳实施例,并不用以限制本实用新型,凡在本实用新型的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本实用新型的保护范围之内。
Claims (6)
1.高功率密度塑封式IPM模块的封装结构,其特征在于,包括:
驱动芯片(17)上表面的电路输出端与印刷电路板(19)上表面的对应焊盘引线键合,驱动芯片(17)下表面由石墨烯填充增强导热银胶(18)与印刷电路板(19)互连;
还包括直接敷铜基板(12),其上表面具有第一铜层(13),其下表面具有第二铜层(11),在直接敷铜基板(12)第一铜层(13)上对应快速恢复二极管芯片(16)阴极的位置制作有第一石墨烯薄膜(30),在直接敷铜基板(12)第一铜层(13)上对应MOSFET芯片(15)漏极的位置制作有第二石墨烯薄膜(31);所述第一铜层(13)与快速恢复二极管芯片(16)的阴极、MOSFET芯片(15)的漏极通过焊料层(14)互连,所述焊料层(14)将第一石墨烯薄膜(30)、第二石墨烯薄膜(31)包裹在内;
由外壳(29)将所述驱动芯片(17)、印刷电路板(19)、直接敷铜基板(12)、MOSFET芯片(15)、快速恢复二极管芯片(16)及所有键合引线封装起来。
2.根据权利要求1所述的高功率密度塑封式IPM模块的封装结构,其特征在于,所述外壳(29)内部由石墨烯填充增强环氧树脂(26)进行灌封。
3.根据权利要求1所述的高功率密度塑封式IPM模块的封装结构,其特征在于,还包括引线框架(25),由焊料层(14)与直接敷铜基板(12)上表面第一铜层(13)以及印刷电路板(19)上表面输出引出端(28)互连。
4.根据权利要求1所述的高功率密度塑封式IPM模块的封装结构,其特征在于,所述快速恢复二极管芯片(16)上表面阳极与引线框架(25)的对应位置用第一铝线组(24)键合,快速恢复二极管芯片(16)下表面阴极由焊料层(14)与直接敷铜基板(12)的上表面第一铜层(13)图形化互连。
5.根据权利要求1所述的高功率密度塑封式IPM模块的封装结构,其特征在于,所述MOSFET芯片(15)上表面源极与快速恢复二极管芯片(16)的阳极用第二铝线组(23)键合,MOSFET芯片(15)栅极与印刷电路板(19)上表面的栅极驱动引出端(20)用第三铝线组(22)键合,MOSFET芯片(15)下表面漏极由焊料层(14)与直接敷铜基板(12)的上表面第一铜层(13)图形化互连。
6.根据权利要求3所述的高功率密度塑封式IPM模块的封装结构,其特征在于,所述引线框架(25)局部伸出外壳(29)。
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