CN107154389B - 一种高散热能力的小型贴片固态继电器及其制造方法 - Google Patents
一种高散热能力的小型贴片固态继电器及其制造方法 Download PDFInfo
- Publication number
- CN107154389B CN107154389B CN201710197330.8A CN201710197330A CN107154389B CN 107154389 B CN107154389 B CN 107154389B CN 201710197330 A CN201710197330 A CN 201710197330A CN 107154389 B CN107154389 B CN 107154389B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710197330.8A CN107154389B (zh) | 2017-03-29 | 2017-03-29 | 一种高散热能力的小型贴片固态继电器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710197330.8A CN107154389B (zh) | 2017-03-29 | 2017-03-29 | 一种高散热能力的小型贴片固态继电器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107154389A CN107154389A (zh) | 2017-09-12 |
CN107154389B true CN107154389B (zh) | 2023-07-21 |
Family
ID=59792619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710197330.8A Active CN107154389B (zh) | 2017-03-29 | 2017-03-29 | 一种高散热能力的小型贴片固态继电器及其制造方法 |
Country Status (1)
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CN (1) | CN107154389B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108470689A (zh) * | 2018-06-06 | 2018-08-31 | 捷捷半导体有限公司 | 一种塑封小型固态继电器及其制造方法 |
CN108766947B (zh) * | 2018-07-26 | 2024-01-26 | 苏州固锝电子股份有限公司 | 具有散热功能的功率器件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216426A (ja) * | 1999-01-26 | 2000-08-04 | Sharp Corp | 光結合素子 |
US6548880B1 (en) * | 1999-08-13 | 2003-04-15 | Nec Compound Semiconductor Devices, Ltd. | Optical semiconductor device and a method of manufacturing the same |
JP2010034104A (ja) * | 2008-07-25 | 2010-02-12 | Panasonic Electric Works Co Ltd | 光結合型半導体リレー |
CN202906868U (zh) * | 2012-10-19 | 2013-04-24 | 陕西群力电工有限责任公司 | 无引线大功率光mos固体继电器 |
CN206774518U (zh) * | 2017-03-29 | 2017-12-19 | 江苏捷捷微电子股份有限公司 | 一种高散热能力的小型贴片固态继电器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7061080B2 (en) * | 2001-06-11 | 2006-06-13 | Fairchild Korea Semiconductor Ltd. | Power module package having improved heat dissipating capability |
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2017
- 2017-03-29 CN CN201710197330.8A patent/CN107154389B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000216426A (ja) * | 1999-01-26 | 2000-08-04 | Sharp Corp | 光結合素子 |
US6548880B1 (en) * | 1999-08-13 | 2003-04-15 | Nec Compound Semiconductor Devices, Ltd. | Optical semiconductor device and a method of manufacturing the same |
JP2010034104A (ja) * | 2008-07-25 | 2010-02-12 | Panasonic Electric Works Co Ltd | 光結合型半導体リレー |
CN202906868U (zh) * | 2012-10-19 | 2013-04-24 | 陕西群力电工有限责任公司 | 无引线大功率光mos固体继电器 |
CN206774518U (zh) * | 2017-03-29 | 2017-12-19 | 江苏捷捷微电子股份有限公司 | 一种高散热能力的小型贴片固态继电器 |
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CN107154389A (zh) | 2017-09-12 |
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Effective date of registration: 20180131 Address after: Chongchuan District 226017 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Park Building 3, room 2159, R & D Applicant after: JIEJIE SEMICONDUCTOR CO.,LTD. Address before: No. 8 Xinglong Road, Qidong science and Technology Pioneer Park, Nantong, Jiangsu Province Applicant before: JIANGSU JIEJIE MICROELECTRONICS Co.,Ltd. |
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Address after: 226200 Jinggangshan Road, Jinggangshan Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province, No. 6 Applicant after: JIEJIE SEMICONDUCTOR CO.,LTD. Address before: Chongchuan District 226017 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Park Building 3, room 2159, R & D Applicant before: JIEJIE SEMICONDUCTOR CO.,LTD. |
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