JP6483543B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP6483543B2
JP6483543B2 JP2015122222A JP2015122222A JP6483543B2 JP 6483543 B2 JP6483543 B2 JP 6483543B2 JP 2015122222 A JP2015122222 A JP 2015122222A JP 2015122222 A JP2015122222 A JP 2015122222A JP 6483543 B2 JP6483543 B2 JP 6483543B2
Authority
JP
Japan
Prior art keywords
layer
transistor
oxide semiconductor
film
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015122222A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016021562A5 (https=
JP2016021562A (ja
Inventor
涼太 方堂
涼太 方堂
求 倉田
求 倉田
慎也 笹川
慎也 笹川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2015122222A priority Critical patent/JP6483543B2/ja
Publication of JP2016021562A publication Critical patent/JP2016021562A/ja
Publication of JP2016021562A5 publication Critical patent/JP2016021562A5/ja
Application granted granted Critical
Publication of JP6483543B2 publication Critical patent/JP6483543B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2015122222A 2014-06-18 2015-06-17 半導体装置の作製方法 Active JP6483543B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015122222A JP6483543B2 (ja) 2014-06-18 2015-06-17 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014125329 2014-06-18
JP2014125329 2014-06-18
JP2015122222A JP6483543B2 (ja) 2014-06-18 2015-06-17 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019024565A Division JP6745927B2 (ja) 2014-06-18 2019-02-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2016021562A JP2016021562A (ja) 2016-02-04
JP2016021562A5 JP2016021562A5 (https=) 2018-07-19
JP6483543B2 true JP6483543B2 (ja) 2019-03-13

Family

ID=54870417

Family Applications (6)

Application Number Title Priority Date Filing Date
JP2015122222A Active JP6483543B2 (ja) 2014-06-18 2015-06-17 半導体装置の作製方法
JP2019024565A Active JP6745927B2 (ja) 2014-06-18 2019-02-14 半導体装置
JP2020132337A Withdrawn JP2020178144A (ja) 2014-06-18 2020-08-04 半導体装置
JP2021172860A Active JP7291758B2 (ja) 2014-06-18 2021-10-22 半導体装置
JP2023092645A Active JP7570462B2 (ja) 2014-06-18 2023-06-05 半導体装置
JP2024176350A Pending JP2024180434A (ja) 2014-06-18 2024-10-08 半導体装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2019024565A Active JP6745927B2 (ja) 2014-06-18 2019-02-14 半導体装置
JP2020132337A Withdrawn JP2020178144A (ja) 2014-06-18 2020-08-04 半導体装置
JP2021172860A Active JP7291758B2 (ja) 2014-06-18 2021-10-22 半導体装置
JP2023092645A Active JP7570462B2 (ja) 2014-06-18 2023-06-05 半導体装置
JP2024176350A Pending JP2024180434A (ja) 2014-06-18 2024-10-08 半導体装置

Country Status (2)

Country Link
US (1) US9455337B2 (https=)
JP (6) JP6483543B2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001881A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9882014B2 (en) 2013-11-29 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9882061B2 (en) * 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9917207B2 (en) 2015-12-25 2018-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US10115741B2 (en) 2016-02-05 2018-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10546960B2 (en) 2016-02-05 2020-01-28 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film, semiconductor device, and manufacturing method of semiconductor device
JP6970511B2 (ja) * 2016-02-12 2021-11-24 株式会社半導体エネルギー研究所 トランジスタ
WO2017199130A1 (en) * 2016-05-19 2017-11-23 Semiconductor Energy Laboratory Co., Ltd. Composite oxide semiconductor and transistor
CN109478514A (zh) 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置
KR102592992B1 (ko) * 2016-07-30 2023-10-23 엘지디스플레이 주식회사 플렉서블 표시장치 및 그 제조방법
US10504925B2 (en) 2016-08-08 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN109791950A (zh) 2016-10-21 2019-05-21 株式会社半导体能源研究所 半导体装置
US10910407B2 (en) 2017-01-30 2021-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10943822B2 (en) 2018-03-15 2021-03-09 Taiwan Semiconductor Manufacturing Co., Ltd. Forming gate line-end of semiconductor structures
KR20240152426A (ko) * 2018-03-29 2024-10-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치 및 전자 기기
CN109659357B (zh) * 2018-12-18 2020-11-24 武汉华星光电半导体显示技术有限公司 薄膜晶体管和显示面板
JP7583722B2 (ja) 2019-08-09 2024-11-14 株式会社半導体エネルギー研究所 記憶装置
JP7568633B2 (ja) * 2019-10-04 2024-10-16 株式会社半導体エネルギー研究所 半導体装置
JP7681958B2 (ja) * 2020-11-11 2025-05-23 武漢天馬微電子有限公司 薄膜トランジスタ回路
JPWO2023156869A1 (https=) * 2022-02-18 2023-08-24
US20250185340A1 (en) * 2022-03-18 2025-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2024037619A (ja) * 2022-09-07 2024-03-19 キオクシア株式会社 半導体記憶装置

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271657A (ja) * 1989-04-13 1990-11-06 Nec Corp 能動層２層積層ｃｍｏｓインバータ
JP3270863B2 (ja) * 1992-12-28 2002-04-02 ソニー株式会社 半導体装置
JP4363684B2 (ja) * 1998-09-02 2009-11-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板およびこれを用いた液晶表示装置
JP2003142576A (ja) * 2001-10-31 2003-05-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2007013091A (ja) * 2005-05-31 2007-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5113830B2 (ja) * 2007-02-28 2013-01-09 東京エレクトロン株式会社 アモルファスカーボン膜の形成方法、半導体装置の製造方法およびコンピュータ可読記憶媒体
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7982250B2 (en) * 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101591613B1 (ko) 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
TWI525614B (zh) 2011-01-05 2016-03-11 半導體能源研究所股份有限公司 儲存元件、儲存裝置、及信號處理電路
US8836137B2 (en) * 2012-04-19 2014-09-16 Macronix International Co., Ltd. Method for creating a 3D stacked multichip module
CN103022012B (zh) * 2011-09-21 2017-03-01 株式会社半导体能源研究所 半导体存储装置
JP5912394B2 (ja) * 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
US8981367B2 (en) * 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8941113B2 (en) * 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
JP6128906B2 (ja) * 2012-04-13 2017-05-17 株式会社半導体エネルギー研究所 半導体装置
US20130270616A1 (en) * 2012-04-13 2013-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
CN108305895B (zh) * 2012-08-10 2021-08-03 株式会社半导体能源研究所 半导体装置及其制造方法
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI761605B (zh) * 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP2014078579A (ja) * 2012-10-10 2014-05-01 Renesas Electronics Corp 半導体装置の製造方法
WO2014065389A1 (en) 2012-10-25 2014-05-01 Semiconductor Energy Laboratory Co., Ltd. Central control system
WO2014084152A1 (en) 2012-11-30 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102222344B1 (ko) 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105190902B (zh) 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
KR20240042562A (ko) 2013-12-26 2024-04-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102529174B1 (ko) 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6509596B2 (ja) 2014-03-18 2019-05-08 株式会社半導体エネルギー研究所 半導体装置
KR102373263B1 (ko) 2014-05-30 2022-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
KR102760229B1 (ko) 2014-05-30 2025-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이의 제조 방법, 및 전자 장치

Also Published As

Publication number Publication date
US9455337B2 (en) 2016-09-27
JP2020178144A (ja) 2020-10-29
JP2019075589A (ja) 2019-05-16
JP2024180434A (ja) 2024-12-26
JP6745927B2 (ja) 2020-08-26
JP2022003709A (ja) 2022-01-11
US20150372122A1 (en) 2015-12-24
JP2016021562A (ja) 2016-02-04
JP7570462B2 (ja) 2024-10-21
JP2023101830A (ja) 2023-07-21
JP7291758B2 (ja) 2023-06-15

Similar Documents

Publication Publication Date Title
JP7291758B2 (ja) 半導体装置
JP7611331B2 (ja) 半導体装置
JP6584840B2 (ja) 半導体装置、及び電子機器
JP6983975B2 (ja) 半導体装置
JP6655995B2 (ja) 記憶装置
JP6416846B2 (ja) 半導体装置
JP6018607B2 (ja) 半導体装置
JP2020010050A (ja) 半導体装置
JP2019197905A (ja) 撮像装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180611

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180611

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190121

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190129

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190214

R150 Certificate of patent or registration of utility model

Ref document number: 6483543

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250