JP6477036B2 - 半導体積層体および半導体装置 - Google Patents
半導体積層体および半導体装置 Download PDFInfo
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- JP6477036B2 JP6477036B2 JP2015043396A JP2015043396A JP6477036B2 JP 6477036 B2 JP6477036 B2 JP 6477036B2 JP 2015043396 A JP2015043396 A JP 2015043396A JP 2015043396 A JP2015043396 A JP 2015043396A JP 6477036 B2 JP6477036 B2 JP 6477036B2
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- 239000004065 semiconductor Substances 0.000 title claims description 139
- 239000000758 substrate Substances 0.000 claims description 96
- 150000001875 compounds Chemical class 0.000 claims description 44
- 229910005542 GaSb Inorganic materials 0.000 claims description 35
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910000673 Indium arsenide Inorganic materials 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 17
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 238000002161 passivation Methods 0.000 description 15
- 238000000089 atomic force micrograph Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000000927 vapour-phase epitaxy Methods 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- -1 aluminum antimony Chemical compound 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- QTQRGDBFHFYIBH-UHFFFAOYSA-N tert-butylarsenic Chemical compound CC(C)(C)[As] QTQRGDBFHFYIBH-UHFFFAOYSA-N 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 101100208382 Danio rerio tmsb gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 208000034841 Thrombotic Microangiopathies Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RBEXEKTWBGMBDZ-UHFFFAOYSA-N tri(propan-2-yl)stibane Chemical compound CC(C)[Sb](C(C)C)C(C)C RBEXEKTWBGMBDZ-UHFFFAOYSA-N 0.000 description 1
- KKOFCVMVBJXDFP-UHFFFAOYSA-N triethylstibane Chemical compound CC[Sb](CC)CC KKOFCVMVBJXDFP-UHFFFAOYSA-N 0.000 description 1
- HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 1
- PORFVJURJXKREL-UHFFFAOYSA-N trimethylstibine Chemical compound C[Sb](C)C PORFVJURJXKREL-UHFFFAOYSA-N 0.000 description 1
- NZJQTVDLVPHKGY-UHFFFAOYSA-N tritert-butylstibane Chemical compound CC(C)(C)[Sb](C(C)(C)C)C(C)(C)C NZJQTVDLVPHKGY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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Description
最初に本願発明の実施態様を列記して説明する。本願の半導体積層体は、III−V族化合物半導体からなる基板と、基板上に形成され、III−V族化合物半導体からなるバッファ層と、バッファ層上に形成され、V族元素としてSbを含むIII−V族化合物半導体からなる層を含む活性層と、を備える。バッファ層において基板側の主面を含む領域には、隣接する他の領域よりもSiとCとの合計濃度が高い高濃度領域が形成されている。
(実施の形態1)
次に、本発明にかかる半導体積層体の一実施の形態である実施の形態1を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
次に、本発明にかかる半導体装置の他の実施の形態である実施の形態2における受光素子およびセンサについて説明する。図8および図2を参照して、実施の形態2の赤外線受光素子1は、図2に示す構造を単位構造とし、当該単位構造が、基板20の一方の主面20Aが延在する方向に複数繰り返される構造を有している。そして、赤外線受光素子1は、画素に対応する複数のn側電極92を有する。一方、p側電極91は1つだけ配置される。
10 半導体積層体
20 基板
20A 一方の主面
29 酸化領域
30 バッファ層
30A 第1主面
30B 第2主面
31 高濃度領域
35 結晶核
40 量子井戸構造
40A 主面
41 第1要素層
42 第2要素層
50 コンタクト層
50A 主面
70 読み出し回路
71 本体
72,73 バンプ
75 配線
80 パッシベーション膜
81 開口部
82 開口部
91 p側電極
92 n側電極
99 トレンチ
99A 側壁
99B 底壁
100 赤外線センサ
Claims (11)
- GaSbからなる基板と、
前記基板上に形成され、GaSbからなるバッファ層と、
前記バッファ層上に形成され、V族元素としてSbを含むIII−V族化合物半導体からなる層を含む活性層と、を備え、
前記バッファ層において前記基板側の主面を含む領域には、隣接する他の領域よりもSiとCとの合計濃度が高い高濃度領域が形成されており、
前記バッファ層は、p型不純物としてCを含み、
前記高濃度領域は、p型不純物としてCに加えてSiを含む、半導体積層体。 - 前記高濃度領域におけるSiとCとの合計濃度は5×1018cm−3以上である、請求項1に記載の半導体積層体。
- 前記高濃度領域におけるSiの濃度は5×1018cm−3以上である、請求項2に記載の半導体積層体。
- 前記高濃度領域におけるSiとCとの合計濃度は5×1020cm−3以下である、請求項1〜3のいずれか1項に記載の半導体積層体。
- 前記高濃度領域の厚みは2nm以上50nm以下である、請求項1〜4のいずれか1項に記載の半導体積層体。
- 前記基板の前記バッファ層側の主面を含む領域には、隣接する前記基板の他の領域に比べて酸素濃度の高い酸化領域が形成されている、請求項1〜5のいずれか1項に記載の半導体積層体。
- 前記酸化領域における酸素の濃度は1×1018cm−3以上1×1021cm−3以下である、請求項6に記載の半導体積層体。
- 前記基板と前記バッファ層の前記高濃度領域以外の領域との間の格子不整合度は0.2%以下である、請求項1〜7のいずれか1項に記載の半導体積層体。
- 前記活性層は量子井戸構造である、請求項1〜8のいずれか1項に記載の半導体積層体。
- 前記バッファ層は有機金属気相成長法により形成されている、請求項1〜9のいずれか1項に記載の半導体積層体。
- 請求項1〜10のいずれか1項に記載の半導体積層体と、
前記半導体積層体上に形成された電極と、を備える、半導体装置。
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