JP6473781B2 - アライメントマークからフォトレジスト層を除去する装置および方法 - Google Patents
アライメントマークからフォトレジスト層を除去する装置および方法 Download PDFInfo
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- JP6473781B2 JP6473781B2 JP2017146652A JP2017146652A JP6473781B2 JP 6473781 B2 JP6473781 B2 JP 6473781B2 JP 2017146652 A JP2017146652 A JP 2017146652A JP 2017146652 A JP2017146652 A JP 2017146652A JP 6473781 B2 JP6473781 B2 JP 6473781B2
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 79
- 238000000034 method Methods 0.000 title claims description 44
- 239000002904 solvent Substances 0.000 claims description 125
- 230000002093 peripheral effect Effects 0.000 claims description 16
- 239000007921 spray Substances 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012855 volatile organic compound Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/04—Cleaning by suction, with or without auxiliary action
- B08B5/043—Cleaning travelling work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
100、W ウエハ
104、302 アライメントマーク
106 ICダイ
200 チャンバ
202 ホルダ
203 軸
204 駆動機構
205 溶剤ディスペンサー
2051 可動アーム
2052 ノズル
2053 モータ
2054 シリンダー
206 溶剤源
207 コントローラ
208 吸引ユニット
2081 モータ
209 エジェクタ
210 排出ユニット
211 アライメントユニット
304 配向ノッチ
500 方法
501、502、503、504 ステップ
B 光線
D 検出装置
H1 出口
H2、H3 入口
M 流量計
P1、P2 パイプ
S1 表面
Claims (11)
- ウエハの少なくとも1つのアライメントマークからフォトレジスト層を除去する装置であって、
前記アライメントマークが周辺領域に形成された前記ウエハを、支持するために使用されるホルダ、
前記ウエハの前記アライメントマーク上の前記フォトレジスト層の上に溶剤をスプレーし、溶解されたフォトレジスト層を生成するように用いられる溶剤ディスペンサー、および
前記ウエハから前記溶解されたフォトレジスト層および前記溶剤を除去するように用いられる吸引ユニットを含み、
前記溶剤ディスペンサーは、前記ウエハに向けて又は前記ウエハから離れて移動することができ、
前記吸引ユニットは、前記ウエハに向けて又はウエハから離れて移動することができ、
前記溶剤ディスペンサーおよび前記吸引ユニットは、前記ウエハの表面に平行する方向に沿って一緒に移動可能である装置。 - 前記溶剤ディスペンサーを前後方向に駆動するように用いられるモータ、および
前記溶剤ディスペンサーを上下方向に駆動するように用いられるシリンダーを含む請求項1に記載の装置。 - 前記溶剤ディスペンサーは、可動アームおよび前記可動アームに連結されたノズルを含み、
前記ノズルは、前記ウエハの表面に対して傾斜し、前記表面の上に構成され、前記ノズルの出口が前記ウエハの端部に向いている請求項1に記載の装置。 - パイプおよび流量計を含み、
前記パイプは、前記溶剤ディスペンサーに連結され前記溶剤を供給し、
前記流量計は、前記パイプに設けられ、前記パイプ内を流れる前記溶剤の流量を測定する請求項1に記載の装置。 - 前記ウエハ上の配向ノッチを探索することによって、前記ウエハの前記アライメントマークの位置を決定するように用いられ、且つ位置信号を生成するように用いられるアライメントユニット、および
前記ウエハから落下した前記溶剤を収集するように用いられる排出ユニットを含む請求項1に記載の装置。 - 前記ホルダに連結された駆動機構を含み、
前記駆動機構は、
前記溶剤ディスペンサーの出口及び前記吸引ユニットの入口が前記アライメントマークと位置合わせされて近接する位置に、前記アライメントマークが届くように、前記アライメントユニットからの前記位置信号に従って前記ホルダ及び前記ウエハを回転させる
請求項5に記載の装置。 - ウエハの少なくとも1つのアライメントマークからフォトレジスト層を除去する方法であって、
前記ウエハの周辺領域に前記アライメントマークが形成され、かつ、アライメントマーク上にフォトレジスト層がコーティングされている前記ウエハを、ホルダ上に配置するステップ、
溶剤ディスペンサーにより、前記アライメントマーク上の前記フォトレジスト層の上に溶剤をスプレーし、溶解されたフォトレジスト層を生成するステップ、および
吸引ユニットにより、前記ウエハから前記溶解されたフォトレジスト層および前記溶剤を除去するステップを含み、
前記溶剤ディスペンサーは、前記ウエハに向けて又は前記ウエハから離れて移動することができ、
前記吸引ユニットは、前記ウエハに向けて又はウエハから離れて移動することができ、
前記溶剤ディスペンサーおよび前記吸引ユニットは、前記ウエハの表面に平行する方向に沿って一緒に移動可能である方法。 - 前記溶剤ディスペンサーは、可動アームおよび前記可動アームに連結されたノズルを含み、
前記ノズルは、前記ウエハの表面に対して傾斜し、前記表面の上に構成され、前記ノズルの出口が前記ウエハの端部に向いている請求項7に記載の方法。 - 前記溶剤が前記溶剤ディスペンサーによって、前記アライメントマーク上の前記フォトレジスト層の上にスプレーされる前に、前記溶剤ディスペンサーの出口が、前記アライメントマークと位置合わせされて、前記ウエハの端部に近接するように前記溶剤ディスペンサーを移動するステップ、
前記溶解されたフォトレジスト層および前記溶剤が前記吸引ユニットによって、前記ウエハから除去される前に、前記吸引ユニットの入口が、前記アライメントマークと位置合わせされて、前記ウエハの端部に近接するように前記吸引ユニットを移動するステップ、および
前記溶剤ディスペンサーが前記フォトレジスト層の上に溶剤をスプレーし、前記吸引ユニットが前記ウエハから前記溶解されたフォトレジスト層および前記溶剤を除去するときに、前記溶剤ディスペンサーおよび前記吸引ユニットを前記ウエハの端部から前記ウエハの内部に向いた方向に沿って一緒に移動するステップを含む請求項7に記載の方法。 - アライメントユニットにより前記ウエハ上の配向ノッチを探索することによって、前記ウエハの前記アライメントマークの位置を決定し、位置信号を生成するステップ、
ホルダに連結された駆動機構を駆動するステップ、
前記アライメントユニットからの前記位置信号に従って前記駆動機構で前記ホルダ及び前記ウエハを回転し、前記溶剤ディスペンサーの出口および前記吸引ユニットの入口が前記アライメントマークと位置合わせされて近接した位置に前記アライメントマークが達するステップ、および
排出ユニットに、前記ウエハから落下した前記溶剤を収集するステップを更に含む請求項7に記載の方法。 - 前記吸引ユニットは、80LPM(l/min)より高い排出速度を有する請求項7に記載の方法。
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US15/484,734 | 2017-04-11 | ||
US15/484,734 US11747742B2 (en) | 2017-04-11 | 2017-04-11 | Apparatus and method for removing photoresist layer from alignment mark |
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JP2018182277A JP2018182277A (ja) | 2018-11-15 |
JP6473781B2 true JP6473781B2 (ja) | 2019-02-20 |
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KR (1) | KR101997711B1 (ja) |
CN (1) | CN108695191B (ja) |
TW (1) | TWI664506B (ja) |
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JP7442938B2 (ja) * | 2020-06-05 | 2024-03-05 | 株式会社ディスコ | ウエーハの加工方法、及び加工装置 |
CN111696881B (zh) * | 2020-06-17 | 2023-12-26 | 段玲玲 | 一种硅晶圆光阻溶解过程观测装置 |
CN114959843B (zh) * | 2021-02-19 | 2024-09-20 | 台湾积体电路制造股份有限公司 | 后电填充模块及用于后电填充模块的校准方法 |
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