JP6458863B2 - 低温焼結セラミック材料、セラミック焼結体およびセラミック電子部品 - Google Patents
低温焼結セラミック材料、セラミック焼結体およびセラミック電子部品 Download PDFInfo
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- JP6458863B2 JP6458863B2 JP2017519119A JP2017519119A JP6458863B2 JP 6458863 B2 JP6458863 B2 JP 6458863B2 JP 2017519119 A JP2017519119 A JP 2017519119A JP 2017519119 A JP2017519119 A JP 2017519119A JP 6458863 B2 JP6458863 B2 JP 6458863B2
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- 239000000919 ceramic Substances 0.000 title claims description 104
- 229910010293 ceramic material Inorganic materials 0.000 title claims description 39
- 239000004020 conductor Substances 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 15
- 229910001597 celsian Inorganic materials 0.000 claims description 14
- 239000010453 quartz Substances 0.000 claims description 14
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 11
- 238000000634 powder X-ray diffraction Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 10
- 229910015999 BaAl Inorganic materials 0.000 claims description 6
- 229910016066 BaSi Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 26
- 239000000843 powder Substances 0.000 description 16
- 238000010304 firing Methods 0.000 description 14
- 238000005245 sintering Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- 239000000945 filler Substances 0.000 description 8
- 238000005238 degreasing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- -1 B 2 O 3 Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
SiをSiO2に換算して70重量部以上かつ80重量部以下と、
BaをBaOに換算して10重量部以上かつ20重量部以下と、
AlをAl2O3に換算して3重量部以上かつ7重量部以下と、
MnをMnOに換算して2重量部と、
BをB2O3に換算して2重量部と、
LiをLi2Oに換算して0.4重量部と、
を含むことを特徴としている。
SiをSiO2に換算して70重量部以上かつ80重量部以下と、
BaをBaOに換算して10重量部以上かつ20重量部以下と、
AlをAl2O3に換算して3重量部以上かつ7重量部以下と、
MnをMnOに換算して2重量部と、
BをB2O3に換算して2重量部と、
LiをLi2Oに換算して0.4重量部と、
を含むことを特徴としている。
SiをSiO2に換算して70重量部以上かつ80重量部以下と、
BaをBaOに換算して10重量部以上かつ20重量部以下と、
AlをAl2O3に換算して3重量部以上かつ7重量部以下と、
MnをMnOに換算して2重量部と、
BをB2O3に換算して2重量部と、
LiをLi2Oに換算して0.4重量部と、
を含むことを特徴としている。
SiをSiO2に換算して70重量部以上かつ80重量部以下と、
BaをBaOに換算して10重量部以上かつ20重量部以下と、
AlをAl2O3に換算して3重量部以上かつ7重量部以下と、
MnをMnOに換算して2重量部と、
BをB2O3に換算して2重量部と、
LiをLi2Oに換算して0.4重量部と、
を含む組成を有していることを特徴としている。
(フィラー原料およびガラスの作製)
次に、表2および表3に示した各試料に係る調合粉末に、溶剤、バインダおよび可塑剤を加え、十分に混合し、ドクターブレード法を適用することによって、セラミックグリーンシートを得た。
次に、上記セラミックグリーンシート上に、Cuを導電成分とする導電性ペーストを印刷し、電極となるべき導電性ペースト膜を形成した。
上記の焼成工程を経て得られた各試料に係る焼結体について、表4に示すように、その「焼結性」、「比誘電率」、および「機械強度」を評価した。なお、「焼結性」は、焼結体をインクに浸漬し、焼結体へのインクの染み具合を目視にて観察し、その結果から、緻密に焼結しているかを判断したもので、表4において、緻密であった場合に「○」と表示し、そうでない場合に「×」と表示した。「焼結性」が「×」であると評価した試料については、「比誘電率」および「機械強度」を測定しなかった。また、「機械強度」は、3点曲げによる抗折強度を測定したものである。
(フィラー原料およびガラスの作製)
実験例2で作製した試料は、すべて、この発明の範囲外の参考例である。
次に、表5に示した各試料に係る調合粉末に、溶剤、バインダおよび可塑剤を加え、十分に混合し、ドクターブレード法を適用することによって、セラミックグリーンシートを得た。
次に、上記セラミックグリーンシート上に、Cuを導電成分とする導電性ペーストを印刷し、電極となるべき導電性ペースト膜を形成した。
上記の焼成工程を経て得られた各試料に係る焼結体について、表6に示すように、実験例1の場合と同様の要領で、その「焼結性」、「比誘電率」、および「機械強度」を評価し、実験例1の場合と同様の要領で表示した。
2 セラミック層
3,23 積層体
4,5 外部導体膜
6 内部導体膜
7 ビア導体
26〜31 外部端子電極
Claims (9)
- SiをSiO2に換算して70重量部以上かつ80重量部以下と、
BaをBaOに換算して10重量部以上かつ20重量部以下と、
AlをAl2O3に換算して3重量部以上かつ7重量部以下と、
MnをMnOに換算して2重量部と、
BをB2O3に換算して2重量部と、
LiをLi2Oに換算して0.4重量部と、
を含む、低温焼結セラミック材料。 - SiをSiO2に換算して70重量部以上かつ80重量部以下と、
BaをBaOに換算して10重量部以上かつ20重量部以下と、
AlをAl2O3に換算して3重量部以上かつ7重量部以下と、
MnをMnOに換算して2重量部と、
BをB2O3に換算して2重量部と、
LiをLi2Oに換算して0.4重量部と、
を含む、セラミック焼結体。 - ガラス、ならびに、結晶相として、少なくともクオーツ(SiO2)およびセルシアン(BaAl2Si2O8)を含み、
粉末X線回折測定において、前記セルシアンの2θ(Cu−Kα)=13.5°のピーク強度をPc、前記クオーツの2θ(Cu−Kα)=50.0°のピーク強度をPqとしたとき、Pq/Pcで表わされるピーク強度比が2.2以上かつ5.3以下である、
請求項2に記載のセラミック焼結体。 - ガラス、ならびに、結晶相として、少なくともクオーツ(SiO2)およびサンボルナイト(BaSi2O5)を含み、
粉末X線回折測定において、前記サンボルナイトの2θ(Cu−Kα)=28.80°のピーク強度をPs、前記クオーツの2θ(Cu−Kα)=50.0°のピーク強度をPqとしたとき、Pq/Psで表わされるピーク強度比が0.022以上かつ0.452以下である、
請求項2に記載のセラミック焼結体。 - 請求項2ないし4のいずれかに記載のセラミック焼結体からなるセラミック層を備える、セラミック電子部品。
- 積層された複数の前記セラミック層を含む積層体と、前記積層体の表面および内部の少なくとも一方に設けられた導体と、を備える、請求項5に記載のセラミック電子部品。
- 当該セラミック電子部品は多層配線基板である、請求項6に記載のセラミック電子部品。
- 当該セラミック電子部品はカプラである、請求項6に記載のセラミック電子部品。
- 前記導体はCuを含む、請求項6ないし8のいずれかに記載のセラミック電子部品。
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