JP6455998B2 - ファン−アウト半導体パッケージ - Google Patents
ファン−アウト半導体パッケージ Download PDFInfo
- Publication number
- JP6455998B2 JP6455998B2 JP2017113041A JP2017113041A JP6455998B2 JP 6455998 B2 JP6455998 B2 JP 6455998B2 JP 2017113041 A JP2017113041 A JP 2017113041A JP 2017113041 A JP2017113041 A JP 2017113041A JP 6455998 B2 JP6455998 B2 JP 6455998B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- disposed
- fan
- insulating layer
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 208
- 239000003566 sealing material Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000002161 passivation Methods 0.000 claims description 35
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011810 insulating material Substances 0.000 claims description 22
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000008393 encapsulating agent Substances 0.000 claims 4
- 239000010410 layer Substances 0.000 description 257
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 38
- 239000010949 copper Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 30
- 239000010931 gold Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 24
- 239000010936 titanium Substances 0.000 description 24
- 239000004020 conductor Substances 0.000 description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 229910052802 copper Inorganic materials 0.000 description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 15
- 229910000679 solder Inorganic materials 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- 239000002313 adhesive film Substances 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 13
- 229910052709 silver Inorganic materials 0.000 description 13
- 239000004332 silver Substances 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 239000000126 substance Substances 0.000 description 11
- 239000011256 inorganic filler Substances 0.000 description 10
- 229910003475 inorganic filler Inorganic materials 0.000 description 10
- 230000006870 function Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003365 glass fiber Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 239000002335 surface treatment layer Substances 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1718—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/17181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0164976 | 2016-12-06 | ||
| KR1020160164976A KR102041661B1 (ko) | 2016-12-06 | 2016-12-06 | 팬-아웃 반도체 패키지 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018093162A JP2018093162A (ja) | 2018-06-14 |
| JP6455998B2 true JP6455998B2 (ja) | 2019-01-23 |
Family
ID=62566289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017113041A Active JP6455998B2 (ja) | 2016-12-06 | 2017-06-07 | ファン−アウト半導体パッケージ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP6455998B2 (ko) |
| KR (1) | KR102041661B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200133501A (ko) * | 2019-05-20 | 2020-11-30 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102582422B1 (ko) * | 2018-06-29 | 2023-09-25 | 삼성전자주식회사 | 재배선층을 갖는 반도체 패키지 |
| KR102150250B1 (ko) * | 2018-08-22 | 2020-09-01 | 삼성전자주식회사 | 반도체 패키지 및 이를 포함하는 안테나 모듈 |
| KR102138012B1 (ko) * | 2018-08-28 | 2020-07-27 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR102164795B1 (ko) * | 2018-09-06 | 2020-10-13 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR102551747B1 (ko) * | 2018-09-13 | 2023-07-06 | 삼성전자주식회사 | 반도체 패키지 |
| KR102530320B1 (ko) * | 2018-11-21 | 2023-05-09 | 삼성전자주식회사 | 반도체 패키지 |
| KR102499040B1 (ko) * | 2018-11-23 | 2023-02-13 | 삼성전자주식회사 | 반도체 패키지 |
| KR102509645B1 (ko) * | 2018-12-19 | 2023-03-15 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| JP7282535B2 (ja) * | 2019-01-28 | 2023-05-29 | 株式会社ダイセル | ファンアウトパッケージ封止用シート状プリプレグ |
| KR102595865B1 (ko) | 2019-03-04 | 2023-10-30 | 삼성전자주식회사 | 하이브리드 인터포저를 갖는 반도체 패키지 |
| US20220084921A1 (en) * | 2019-03-12 | 2022-03-17 | Sony Semiconductor Solutions Corporation | Semiconductor package and manufacturing method of semiconductor package |
| JP7163224B2 (ja) * | 2019-03-15 | 2022-10-31 | ルネサスエレクトロニクス株式会社 | 電子装置 |
| US11380620B2 (en) * | 2019-06-14 | 2022-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package including cavity-mounted device |
| US20240145445A1 (en) * | 2021-03-09 | 2024-05-02 | Sony Semiconductor Solutions Corporation | Semiconductor device, method for manufacturing semiconductor device, and electronic device |
| US20220406752A1 (en) * | 2021-06-17 | 2022-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor die with tapered sidewall in package and fabricating method thereof |
| US20230110957A1 (en) * | 2021-10-13 | 2023-04-13 | Mediatek Inc. | Electronic device with stacked printed circuit boards |
| WO2023157892A1 (ja) * | 2022-02-15 | 2023-08-24 | 大日本印刷株式会社 | 半導体パッケージ、半導体パッケージ中間体、再配線層チップ、再配線層チップ中間体、半導体パッケージの製造方法及び半導体パッケージ中間体の製造方法 |
| CN114975418B (zh) * | 2022-04-29 | 2024-02-27 | 盛合晶微半导体(江阴)有限公司 | 三维扇出型内存的pop封装结构及其封装方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123506A (ja) * | 2005-10-27 | 2007-05-17 | Kyocera Corp | 回路モジュールの製造方法 |
| KR101037229B1 (ko) * | 2006-04-27 | 2011-05-25 | 스미토모 베이클리트 컴퍼니 리미티드 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP5284155B2 (ja) * | 2008-03-24 | 2013-09-11 | 日本特殊陶業株式会社 | 部品内蔵配線基板 |
| JPWO2011002031A1 (ja) * | 2009-06-30 | 2012-12-13 | 三洋電機株式会社 | 素子搭載用基板および半導体モジュール |
| KR20110054348A (ko) * | 2009-11-17 | 2011-05-25 | 삼성전기주식회사 | 전자소자 내장형 인쇄회로기판 및 그 제조방법 |
| JP5826532B2 (ja) * | 2010-07-15 | 2015-12-02 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP6152254B2 (ja) * | 2012-09-12 | 2017-06-21 | 新光電気工業株式会社 | 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 |
| JP5583828B1 (ja) * | 2013-08-05 | 2014-09-03 | 株式会社フジクラ | 電子部品内蔵多層配線基板及びその製造方法 |
-
2016
- 2016-12-06 KR KR1020160164976A patent/KR102041661B1/ko active IP Right Grant
-
2017
- 2017-06-07 JP JP2017113041A patent/JP6455998B2/ja active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200133501A (ko) * | 2019-05-20 | 2020-11-30 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
| KR102620892B1 (ko) | 2019-05-20 | 2024-01-04 | 삼성전자주식회사 | 팬-아웃 반도체 패키지 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180064743A (ko) | 2018-06-15 |
| KR102041661B1 (ko) | 2019-11-07 |
| JP2018093162A (ja) | 2018-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6455998B2 (ja) | ファン−アウト半導体パッケージ | |
| KR101939046B1 (ko) | 팬-아웃 반도체 패키지 | |
| JP6451017B2 (ja) | ファン−アウト半導体パッケージ | |
| KR102071457B1 (ko) | 팬-아웃 반도체 패키지 | |
| JP6738401B2 (ja) | ファン−アウト半導体パッケージ | |
| KR101901713B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR101942742B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102016491B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102029100B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102427643B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR101942747B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR101994748B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102145218B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102380821B1 (ko) | 팬-아웃 반도체 패키지 | |
| US11862574B2 (en) | Fan-out semiconductor package | |
| TW201926586A (zh) | 扇出型半導體封裝 | |
| KR102185706B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102586890B1 (ko) | 반도체 패키지 | |
| KR20190105378A (ko) | 팬-아웃 반도체 패키지 모듈 | |
| KR20200058776A (ko) | 팬-아웃 반도체 패키지 | |
| KR20200060967A (ko) | 반도체 패키지 | |
| KR20190074714A (ko) | 팬-아웃 반도체 패키지 | |
| KR102509645B1 (ko) | 팬-아웃 반도체 패키지 | |
| KR102179167B1 (ko) | 반도체 패키지 | |
| KR102509644B1 (ko) | 패키지 모듈 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180529 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180828 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181120 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181217 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6455998 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |