JP6439054B2 - ワーク保持体および成膜装置 - Google Patents
ワーク保持体および成膜装置 Download PDFInfo
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- JP6439054B2 JP6439054B2 JP2017537726A JP2017537726A JP6439054B2 JP 6439054 B2 JP6439054 B2 JP 6439054B2 JP 2017537726 A JP2017537726 A JP 2017537726A JP 2017537726 A JP2017537726 A JP 2017537726A JP 6439054 B2 JP6439054 B2 JP 6439054B2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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Description
上記粘着シートは、第1の粘着力で上記ホルダに接着される第1の面と、上記第1の粘着力よりも高い第2の粘着力でワークを保持することが可能に構成された第2の面とを有する。
これにより、第1の面と第2の面とで粘着力が相互に異なる粘着シートを容易に構成することができる。
これにより、ワークの接合面を第2の面に密着させることができるため、ワークに対する保持強度を高めることができる。また、例えば成膜処理において、接合面への成膜材料の回り込みを阻止することが可能となる。
これにより、ワークの放熱効率が高まるため、プラズマや熱源を必要とする表面処理にも適用することが可能となる。
これにより、複数個のワークを一括処理することが可能となるため、生産性の向上が図れるようになる。
上記成膜源は、上記成膜室に設置される。
上記支持体は、上記成膜室に設置され、ワークを支持可能な支持面を有する。
上記ワーク保持体は、上記支持面に着脱可能に構成されたホルダと、粘着シートとを有する。上記粘着シートは、第1の粘着力で上記ホルダに接着される第1の面と、上記第1の粘着力よりも高い第2の粘着力で上記ワークを粘着保持することが可能に構成された第2の面とを有する。
これにより、ワークを所定温度に冷却することが可能となるため、プラズマや熱源を必要とする成膜処理にも適用することが可能となる。
これにより、複数のワークを一括して成膜処理することができるため、生産性の向上を図ることが可能となる。
図1は、製造対象である電子部品100の構成を示す概略側断面である。
なお、理解を容易にするためバンプ103はやや誇張して示されており、その数や大きさ、形状等は実際のものと異なる場合がある(以下の各図においても同様)。
図2は、本実施形態に係るワーク保持体20の分解側断面図である。
次に、以上のように構成されるワーク保持体20を用いた電子部品100の製造方法(保護膜105の成膜方法)について説明する。
同様に、第2の成膜ゾーン4は、2台の電極を含むスパッタカソード10と、スパッタカソード10の回転ドラム2側に配置されたターゲット11と、スパッタカソード10に交流電圧を印加するためのAC電源12と、Arガス等を導入するためのArガス導入系13等を備える。
ターゲット7,11は、保護膜105を形成する材料で構成される。第1の成膜ゾーン3および第2の成膜ゾーン4において、ターゲット7,11と回転ドラム2との間には、開閉自在のシャッタ17,18がそれぞれ設けられている。
前処理ゾーン5は、第1の成膜ゾーン3と第2の成膜ゾーン4との間の適宜の位置に設けられ、イオンビーム源15およびそのための電源16を含む。
なお、第2の粘着層22は、所定温度以上での加熱処理あるいは紫外線の照射処理によって粘着力が低下する接着性樹脂材料で構成されてもよく、この場合、電子部品100の回収が容易になるという利点がある。
図8A〜Cは、粘着シート22の貼り替え工程を説明するワーク保持体20の概略側断面図である。
2…回転ドラム(支持体)
7,11…ターゲット
20…ワーク保持体
21…ホルダ
211…ホルダ本体
212…熱伝導シート
22…粘着シート
22a…第1の面
22b…第2の面
220…基材
221…第1の粘着層
222…第2の粘着層
50…成膜装置
100…電子部品
103…バンプ
105…保護膜
110…部品本体
Claims (7)
- 表面処理用のワーク保持体であって、
ホルダ本体と熱伝導シートとの積層構造を有するホルダと、
0.2N/25mm〜3.5N/25mmの範囲内の剥離強度の第1の粘着力で前記熱伝導シートに接着される第1の面と、前記第1の粘着力よりも高い6.5N/25mm〜12N/25mmの範囲内の剥離強度の第2の粘着力でワークを保持することが可能に構成された第2の面とを有する粘着シートと
を具備するワーク保持体。 - 請求項1に記載のワーク保持体であって、
前記粘着シートは、
基材と、
前記第1の面を構成し前記基材の一方の面に積層された第1の粘着層と、
前記第2の面を構成し前記基材の他方の面に積層された第2の粘着層と
を有する
ワーク保持体。 - 請求項1又は2に記載のワーク保持体であって、
前記第2の面は、前記ワークの接合面の形状に追従して変形することが可能に構成される
ワーク保持体。 - 請求項1〜3のいずれか1つに記載のワーク保持体であって、
前記ホルダは、同一面上に複数個のワークを保持可能な板形状を有する
ワーク保持体。 - 成膜室と、
前記成膜室に設置された成膜源と、
前記成膜室に設置されワークを支持可能な支持面を有する支持体と、
ホルダ本体と熱伝導シートとの積層構造を有し、前記支持面に着脱可能に構成されたホルダと、
0.2N/25mm〜3.5N/25mmの範囲内の剥離強度の第1の粘着力で前記熱伝導シートに接着される第1の面と、前記第1の粘着力よりも高い6.5N/25mm〜12N/25mmの範囲内の剥離強度の第2の粘着力で前記ワークを保持することが可能に構成された第2の面とを有する粘着シートと
を有するワーク保持体と
を具備する成膜装置。 - 請求項5に記載の成膜装置であって、
前記支持体は、前記支持面を冷却可能な冷却機構を有する
成膜装置。 - 請求項6に記載の成膜装置であって、
前記支持体は、前記成膜室内で回転可能に構成され前記支持面が周面に形成された回転ドラムを含む
成膜装置。
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PCT/JP2016/073974 WO2017038466A1 (ja) | 2015-09-02 | 2016-08-17 | ワーク保持体および成膜装置 |
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US10633736B2 (en) * | 2016-12-13 | 2020-04-28 | Shibaura Mechatronics Corporation | Film formation apparatus |
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JP7320932B2 (ja) * | 2017-11-10 | 2023-08-04 | 芝浦メカトロニクス株式会社 | 成膜装置及び部品剥離装置 |
JP7051379B2 (ja) * | 2017-11-15 | 2022-04-11 | 芝浦メカトロニクス株式会社 | 成膜装置及び埋込処理装置 |
KR102399748B1 (ko) * | 2018-10-01 | 2022-05-19 | 주식회사 테토스 | 입체형 대상물 표면의 금속막 증착 장치 |
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JP7132198B2 (ja) * | 2019-09-27 | 2022-09-06 | 芝浦メカトロニクス株式会社 | 成膜装置及び埋込処理装置 |
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JP2005116610A (ja) * | 2003-10-03 | 2005-04-28 | Nitto Denko Corp | 半導体ウエハの加工方法および半導体ウエハ加工用粘着シート |
KR100701552B1 (ko) * | 2006-06-23 | 2007-03-30 | 한국과학기술연구원 | 압축기체를 이용한 필라멘트 및 시트 형태의 생분해성폴리에스테르 고분자 소재의 제조방법 |
JP2008115272A (ja) * | 2006-11-04 | 2008-05-22 | Nitto Denko Corp | 熱剥離性両面粘着シート及び被加工体の加工方法 |
JP2008171934A (ja) * | 2007-01-10 | 2008-07-24 | Lintec Corp | 脆質部材の保護構造および脆質部材の処理方法 |
US20080302481A1 (en) * | 2007-06-07 | 2008-12-11 | Tru-Si Technologies, Inc. | Method and apparatus for debonding of structures which are bonded together, including (but not limited to) debonding of semiconductor wafers from carriers when the bonding is effected by double-sided adhesive tape |
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WO2017038466A1 (ja) | 2017-03-09 |
CN107109638B (zh) | 2019-05-28 |
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