JP5458323B2 - 静電チャック及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Description
弾性吸着層における凸部の高さをh、基板吸着面における単位面積当たりの凸部の数をn、凸部における頂面の面積をA、凸部を形成する弾性材料の弾性率をEとして、全体的平坦度がWhの基板を吸着力Fで吸着・保持したときに、吸着力Fが働く方向に凸部が収縮する量δが、以下の関係式(1)を満足するように弾性吸着層を形成し、かつ、基板吸着面における単位面積あたりの凸部頂面の総面積の割合ξを10%以上にすることを特徴とする静電チャックの製造方法である。
5Wh≧δ≧0.5Wh、ここでδ=(h/nA)・(F/E) ・・・(1)
〔但し、各値の単位は、それぞれ括弧内に示したものである;Wh(m)、h(m)、n(個/m2)、A(m2)、E(Pa)、F(Pa)、δ(m)。〕
2Wh≧δ≧1Wh、ここでδ=(h/nA)・(F/E) ・・・(2)
〔各値の単位は、関係式(1)と同じである。〕
表1には、ゴムのなかでも比較的柔らかいとされる弾性率1MPaのシリコーンゴムからなる場合(例1〜3)、エンジニアリングプラスティクの代表であり、静電チャックでも一般に使用される弾性率1GPaのポリイミドからなる場合(例4、5)、及びゴムの中でも比較的硬いとされる弾性率10MPaの場合について、それぞれ弾性吸着層が備える凸部の例を示す。また、図1(a)は、この表1における凸部の配置関係を示す平面説明図である。この図1(a)では、直径d(m)の凸部1を一辺の長さがa(m)の正三角形の各頂点に配置している様子を示しており、そのうちのひとつ凸部1cを中心として、凸部1bから時計回り方向に凸部1g、凸部1h、凸部1d、凸部1f、及び凸部1eが配置されている。これらの凸部1は、静電チャック100における一部を示しているものであり、このような関係を有した配置状態で、凸部1が静電チャック100の基板吸着面を形成するように全面に分布する。また、図1(a)におけるA−A断面方向から見た静電チャック100の様子を図1(b)に示す。静電チャック100は、例えばアルミニウム金属で形成されたベース(金属基盤)5を有し、その上に下部絶縁層3と弾性吸着層2が積層されており、これらの間に吸着電極(内部電極)4を備えている。このうち、弾性吸着層2は、吸着電極4の上面側を電気的に絶縁する上部絶縁層を兼ねており、弾性吸着層2は、高さh(m)の凸部1を複数備えて、基板6を支持して基板吸着面を形成する。また、この弾性吸着層2における隣接した凸部1の間には、基板6とは接触しない上面2bを有する。
厚み100μm、300mm×300mmの薄膜シリコーンシート(サンシンエンタープライズ株式会社製、マイクロシリコーンシートの片面梨子地タイプ、型番NμKSA-100-50)を用意し、直径298mmの円形に切りだして、後述のようにして弾性吸着層2とした。また、厚さ50μmのポリイミドシートの片面に厚さ9μmの銅箔が積層された銅張積層板(宇部興産株式会社製、銅張積層板「ユピセル(登録商標)N」)を用いて、銅箔面にマスキングをして腐食性エッチング液にて半月型パターン(直径294mmの半円状)を有する双極型(電極間隔2mm)の吸着電極4を形成し、直径298mmのポリイミドシートを下部絶縁層3とした。そして、図2に示すように、銅張積層板の銅箔面側に、厚さ10μmのエポキシ系ボンディングシート(図示せず)を介して、シリコーンシートの梨子地面が表側になるよう接着した。一体に貼り合わされたシートは、内部に直径6mmの冷却水の水路7を有して、板厚15mm、直径298mmのアルミニウム製ベース5に対して、前述のエポキシ系ボンディングシートを介して貼着し、シリコーンシートの梨子地面が表側、すなわち基板吸着面となるようにした。
厚さ25μmのポリイミドシートに、表面が梨子地に処理された厚さ100μmのシリコーンシートが張り合わされた複合シート11、厚さ13μmのアクリルエポキシボンディングシート12、及び、厚さ12μmの電解銅箔13(古河サーキットフォイル(株)製)を、それぞれ直径298mmの円形に切り出して、プレス成型にて3MPa、170℃の条件で積層化した。
2:弾性吸着層
2b:弾性吸着層の凸部以外の上面
3:下部絶縁層
4:吸着電極
5:ベース
6:基板
7:水路
8:絶縁スリーブ
9:電位供給線
10:電源
11:複合シート
12:ボンディングシート
13:電解銅箔
14:ポリイミドシート
15:シリコーン接着剤
16:ベース
100、101:静電チャック
Claims (7)
- 弾性材料からなる複数の凸部を備えた弾性吸着層を基板吸着面とし、この弾性吸着層を介して基板を吸着・保持する静電チャックの製造方法であって、
弾性吸着層における凸部の高さをh、基板吸着面における単位面積当たりの凸部の数をn、凸部における頂面の面積をA、凸部を形成する弾性材料の弾性率をEとして、全体的平坦度がWhの基板を吸着力Fで吸着・保持したときに、吸着力Fが働く方向に凸部が収縮する量δが、以下の関係式(1)を満足するように弾性吸着層を形成し、かつ、基板吸着面における単位面積あたりの凸部頂面の総面積の割合ξを10%以上にすることを特徴とする静電チャックの製造方法。
5Wh≧δ≧0.5Wh、ここでδ=(h/nA)・(F/E) ・・・(1)
〔但し、各値の単位は、それぞれ括弧内に示したものである;Wh(m)、h(m)、n(個/m2)、A(m2)、E(Pa)、F(Pa)、δ(m)。〕 - 凸部の高さが1μm以上1000μm以下の範囲である請求項1に記載の静電チャックの製造方法。
- 凸部を形成する弾性材料の弾性率Eが、0.1MPa以上50MPa以下の範囲である請求項1に記載の静電チャックの製造方法。
- 凸部を形成する弾性材料は、シリコーンゴム、アクリルゴム、ニトリルゴム、イソプレンゴム、ウレタンゴム、エチレンプロピレンゴム、エピクロルヒドリンゴム、クロロプレンゴム、スチレンブタジエンゴム、ブタジエンゴム、フッ素ゴム、及びブチルゴムからなる群から選ばれた1以上である請求項1に記載の静電チャックの製造方法。
- 凸部の頂面が梨子地パターンを備える請求項1に記載の静電チャックの製造方法。
- 基板の全体的平坦度Whが、0.1μm〜10μmの範囲である請求項1に記載の静電チャックの製造方法。
- 弾性材料からなる弾性吸着層と、上部絶縁層と、内部電極を形成する電極層と、下部絶縁層とを備えた静電チャックシートを真空チャック装置に収容し、静電チャックシートの弾性吸着層側に所定のパターンマスクを介在させて真空吸引することで、パターンマスクに対応した凸部を形成して弾性吸着層を得る請求項1〜6のいずれかに記載の静電チャックの製造方法。
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KR (1) | KR101559947B1 (ja) |
CN (1) | CN102187446B (ja) |
HK (1) | HK1158368A1 (ja) |
TW (1) | TWI467691B (ja) |
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CN102738293B (zh) * | 2011-04-01 | 2014-12-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 执行装置和机械手 |
JP5505667B2 (ja) | 2011-09-30 | 2014-05-28 | Toto株式会社 | 交流駆動静電チャック |
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US8333860B1 (en) * | 2011-11-18 | 2012-12-18 | LuxVue Technology Corporation | Method of transferring a micro device |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
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HK1158368A1 (en) | 2012-07-13 |
JPWO2010044398A1 (ja) | 2012-03-15 |
KR101559947B1 (ko) | 2015-10-13 |
KR20110084888A (ko) | 2011-07-26 |
CN102187446B (zh) | 2013-07-24 |
TWI467691B (zh) | 2015-01-01 |
CN102187446A (zh) | 2011-09-14 |
TW201026582A (en) | 2010-07-16 |
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