JP6410007B2 - カスコード増幅器 - Google Patents
カスコード増幅器 Download PDFInfo
- Publication number
- JP6410007B2 JP6410007B2 JP2013259217A JP2013259217A JP6410007B2 JP 6410007 B2 JP6410007 B2 JP 6410007B2 JP 2013259217 A JP2013259217 A JP 2013259217A JP 2013259217 A JP2013259217 A JP 2013259217A JP 6410007 B2 JP6410007 B2 JP 6410007B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- drain
- gate
- voltage
- bias circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013259217A JP6410007B2 (ja) | 2013-12-16 | 2013-12-16 | カスコード増幅器 |
| US14/462,625 US9306500B2 (en) | 2013-12-16 | 2014-08-19 | Cascode amplifier |
| KR1020140175592A KR101691456B1 (ko) | 2013-12-16 | 2014-12-09 | 캐스코드 증폭기 |
| CN201410782219.1A CN104716910B (zh) | 2013-12-16 | 2014-12-16 | 共射共基放大器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013259217A JP6410007B2 (ja) | 2013-12-16 | 2013-12-16 | カスコード増幅器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015115929A JP2015115929A (ja) | 2015-06-22 |
| JP2015115929A5 JP2015115929A5 (enExample) | 2016-11-24 |
| JP6410007B2 true JP6410007B2 (ja) | 2018-10-24 |
Family
ID=53369699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013259217A Active JP6410007B2 (ja) | 2013-12-16 | 2013-12-16 | カスコード増幅器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9306500B2 (enExample) |
| JP (1) | JP6410007B2 (enExample) |
| KR (1) | KR101691456B1 (enExample) |
| CN (1) | CN104716910B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9455755B2 (en) | 2014-10-06 | 2016-09-27 | Skyworks Solutions, Inc. | Aggregate signal amplification device and method |
| US9496207B1 (en) | 2015-06-19 | 2016-11-15 | Semiconductor Components Industries, Llc | Cascode semiconductor package and related methods |
| CN106817016B (zh) * | 2016-12-29 | 2019-08-13 | 华为技术有限公司 | 一种功率管偏置电路 |
| KR102075951B1 (ko) | 2017-09-29 | 2020-02-11 | 가부시키가이샤 무라타 세이사쿠쇼 | 전력 증폭 회로 |
| JP2021090168A (ja) * | 2019-12-05 | 2021-06-10 | 株式会社村田製作所 | 電力増幅回路 |
| CN111313671B (zh) * | 2020-02-18 | 2021-07-20 | 广州慧智微电子有限公司 | 一种集成防过压电路 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59228475A (ja) | 1983-06-09 | 1984-12-21 | Matsushita Electric Ind Co Ltd | 映像出力増幅器 |
| JP2888923B2 (ja) | 1989-05-31 | 1999-05-10 | 株式会社東芝 | 線形化差動増幅器 |
| EP0400650B1 (en) * | 1989-05-31 | 1996-10-09 | Kabushiki Kaisha Toshiba | Linearized differential amplifier |
| JPH03240306A (ja) | 1990-02-19 | 1991-10-25 | Hitachi Ltd | カスコードアンプ |
| JP3711193B2 (ja) * | 1998-01-16 | 2005-10-26 | 三菱電機株式会社 | 送受信切り換え回路 |
| JP3474825B2 (ja) * | 2000-03-13 | 2003-12-08 | 富士通カンタムデバイス株式会社 | 高周波電力増幅器および通信装置 |
| JP2003347867A (ja) | 2002-05-23 | 2003-12-05 | Nec Corp | Fetのバイアス設定回路 |
| JP4262545B2 (ja) * | 2003-07-09 | 2009-05-13 | 三菱電機株式会社 | カスコード接続回路及びその集積回路 |
| JP2006197227A (ja) * | 2005-01-13 | 2006-07-27 | Renesas Technology Corp | 可変利得増幅回路、受信機及び送信機 |
| JP2007074121A (ja) * | 2005-09-05 | 2007-03-22 | Fujitsu Ltd | 増幅器及び相互コンダクタンス制御方法 |
| JP2010068261A (ja) * | 2008-09-11 | 2010-03-25 | Mitsubishi Electric Corp | カスコード回路 |
| US8385854B2 (en) | 2009-05-21 | 2013-02-26 | Qualcomm Incorporated | Adaptive parametric power amplifier protection circuit |
| CN101924520B (zh) * | 2009-06-17 | 2012-11-14 | 中兴通讯股份有限公司 | 一种基站功率放大器及提高基站功率放大器效率的方法 |
| US8150343B2 (en) * | 2009-09-21 | 2012-04-03 | Broadcom Corporation | Dynamic stability, gain, efficiency and impedance control in a linear/non-linear CMOS power amplifier |
| US8106711B2 (en) | 2009-11-12 | 2012-01-31 | Peregrine Semiconductor Coporation | Stacked pre-driver amplifier |
| JP5879547B2 (ja) | 2011-06-01 | 2016-03-08 | パナソニックIpマネジメント株式会社 | スルーモード付き低雑音増幅器 |
| US8737935B2 (en) * | 2012-04-30 | 2014-05-27 | Broadcom Corporation | Multi-band up-convertor mixer |
| US9287829B2 (en) * | 2012-12-28 | 2016-03-15 | Peregrine Semiconductor Corporation | Control systems and methods for power amplifiers operating in envelope tracking mode |
-
2013
- 2013-12-16 JP JP2013259217A patent/JP6410007B2/ja active Active
-
2014
- 2014-08-19 US US14/462,625 patent/US9306500B2/en active Active
- 2014-12-09 KR KR1020140175592A patent/KR101691456B1/ko active Active
- 2014-12-16 CN CN201410782219.1A patent/CN104716910B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015115929A (ja) | 2015-06-22 |
| KR20150070011A (ko) | 2015-06-24 |
| US9306500B2 (en) | 2016-04-05 |
| US20150171794A1 (en) | 2015-06-18 |
| CN104716910A (zh) | 2015-06-17 |
| CN104716910B (zh) | 2018-10-16 |
| KR101691456B1 (ko) | 2016-12-30 |
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