CN104716910B - 共射共基放大器 - Google Patents

共射共基放大器 Download PDF

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Publication number
CN104716910B
CN104716910B CN201410782219.1A CN201410782219A CN104716910B CN 104716910 B CN104716910 B CN 104716910B CN 201410782219 A CN201410782219 A CN 201410782219A CN 104716910 B CN104716910 B CN 104716910B
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CN
China
Prior art keywords
transistor
voltage
biasing circuit
cascode amplifier
grid
Prior art date
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Active
Application number
CN201410782219.1A
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English (en)
Chinese (zh)
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CN104716910A (zh
Inventor
高桥贵纪
宫下美代
山本和也
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication date
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Publication of CN104716910A publication Critical patent/CN104716910A/zh
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Publication of CN104716910B publication Critical patent/CN104716910B/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
CN201410782219.1A 2013-12-16 2014-12-16 共射共基放大器 Active CN104716910B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013259217A JP6410007B2 (ja) 2013-12-16 2013-12-16 カスコード増幅器
JP2013-259217 2013-12-16

Publications (2)

Publication Number Publication Date
CN104716910A CN104716910A (zh) 2015-06-17
CN104716910B true CN104716910B (zh) 2018-10-16

Family

ID=53369699

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410782219.1A Active CN104716910B (zh) 2013-12-16 2014-12-16 共射共基放大器

Country Status (4)

Country Link
US (1) US9306500B2 (enExample)
JP (1) JP6410007B2 (enExample)
KR (1) KR101691456B1 (enExample)
CN (1) CN104716910B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111313671A (zh) * 2020-02-18 2020-06-19 广州慧智微电子有限公司 一种集成防过压电路

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9455755B2 (en) 2014-10-06 2016-09-27 Skyworks Solutions, Inc. Aggregate signal amplification device and method
US9496207B1 (en) 2015-06-19 2016-11-15 Semiconductor Components Industries, Llc Cascode semiconductor package and related methods
CN106817016B (zh) * 2016-12-29 2019-08-13 华为技术有限公司 一种功率管偏置电路
KR102075951B1 (ko) 2017-09-29 2020-02-11 가부시키가이샤 무라타 세이사쿠쇼 전력 증폭 회로
JP2021090168A (ja) * 2019-12-05 2021-06-10 株式会社村田製作所 電力増幅回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079515A (en) * 1989-05-31 1992-01-07 Kabushiki Kaisha Toshiba Linearized differential amplifier
CN101674053A (zh) * 2008-09-11 2010-03-17 三菱电机株式会社 栅地-阴地放大器电路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228475A (ja) 1983-06-09 1984-12-21 Matsushita Electric Ind Co Ltd 映像出力増幅器
JP2888923B2 (ja) 1989-05-31 1999-05-10 株式会社東芝 線形化差動増幅器
JPH03240306A (ja) 1990-02-19 1991-10-25 Hitachi Ltd カスコードアンプ
JP3711193B2 (ja) * 1998-01-16 2005-10-26 三菱電機株式会社 送受信切り換え回路
JP3474825B2 (ja) * 2000-03-13 2003-12-08 富士通カンタムデバイス株式会社 高周波電力増幅器および通信装置
JP2003347867A (ja) 2002-05-23 2003-12-05 Nec Corp Ｆｅｔのバイアス設定回路
JP4262545B2 (ja) * 2003-07-09 2009-05-13 三菱電機株式会社 カスコード接続回路及びその集積回路
JP2006197227A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 可変利得増幅回路、受信機及び送信機
JP2007074121A (ja) * 2005-09-05 2007-03-22 Fujitsu Ltd 増幅器及び相互コンダクタンス制御方法
US8385854B2 (en) 2009-05-21 2013-02-26 Qualcomm Incorporated Adaptive parametric power amplifier protection circuit
CN101924520B (zh) * 2009-06-17 2012-11-14 中兴通讯股份有限公司 一种基站功率放大器及提高基站功率放大器效率的方法
US8150343B2 (en) * 2009-09-21 2012-04-03 Broadcom Corporation Dynamic stability, gain, efficiency and impedance control in a linear/non-linear CMOS power amplifier
US8106711B2 (en) 2009-11-12 2012-01-31 Peregrine Semiconductor Coporation Stacked pre-driver amplifier
JP5879547B2 (ja) 2011-06-01 2016-03-08 パナソニックＩｐマネジメント株式会社 スルーモード付き低雑音増幅器
US8737935B2 (en) * 2012-04-30 2014-05-27 Broadcom Corporation Multi-band up-convertor mixer
US9287829B2 (en) * 2012-12-28 2016-03-15 Peregrine Semiconductor Corporation Control systems and methods for power amplifiers operating in envelope tracking mode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079515A (en) * 1989-05-31 1992-01-07 Kabushiki Kaisha Toshiba Linearized differential amplifier
CN101674053A (zh) * 2008-09-11 2010-03-17 三菱电机株式会社 栅地-阴地放大器电路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111313671A (zh) * 2020-02-18 2020-06-19 广州慧智微电子有限公司 一种集成防过压电路

Also Published As

Publication number Publication date
JP2015115929A (ja) 2015-06-22
KR20150070011A (ko) 2015-06-24
US9306500B2 (en) 2016-04-05
US20150171794A1 (en) 2015-06-18
CN104716910A (zh) 2015-06-17
KR101691456B1 (ko) 2016-12-30
JP6410007B2 (ja) 2018-10-24

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Effective date of registration: 20180801

Address after: Kyoto City

Applicant after: Murata Manufacturing Co., Ltd.

Address before: Tokyo, Japan

Applicant before: Missubishi Electric Co., Ltd.

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