KR101691456B1 - 캐스코드 증폭기 - Google Patents

캐스코드 증폭기 Download PDF

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Publication number
KR101691456B1
KR101691456B1 KR1020140175592A KR20140175592A KR101691456B1 KR 101691456 B1 KR101691456 B1 KR 101691456B1 KR 1020140175592 A KR1020140175592 A KR 1020140175592A KR 20140175592 A KR20140175592 A KR 20140175592A KR 101691456 B1 KR101691456 B1 KR 101691456B1
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South Korea
Prior art keywords
transistor
voltage
bias circuit
drain
power supply
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KR1020140175592A
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Korean (ko)
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KR20150070011A (ko
Inventor
요시노리 타카하시
미요 미야시타
카즈야 야마모토
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
KR1020140175592A 2013-12-16 2014-12-09 캐스코드 증폭기 Active KR101691456B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013259217A JP6410007B2 (ja) 2013-12-16 2013-12-16 カスコード増幅器
JPJP-P-2013-259217 2013-12-16

Publications (2)

Publication Number Publication Date
KR20150070011A KR20150070011A (ko) 2015-06-24
KR101691456B1 true KR101691456B1 (ko) 2016-12-30

Family

ID=53369699

Family Applications (1)

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KR1020140175592A Active KR101691456B1 (ko) 2013-12-16 2014-12-09 캐스코드 증폭기

Country Status (4)

Country Link
US (1) US9306500B2 (enExample)
JP (1) JP6410007B2 (enExample)
KR (1) KR101691456B1 (enExample)
CN (1) CN104716910B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9455755B2 (en) * 2014-10-06 2016-09-27 Skyworks Solutions, Inc. Aggregate signal amplification device and method
US9496207B1 (en) 2015-06-19 2016-11-15 Semiconductor Components Industries, Llc Cascode semiconductor package and related methods
CN110247552A (zh) * 2016-12-29 2019-09-17 华为技术有限公司 一种dcdc转换器
KR102075951B1 (ko) 2017-09-29 2020-02-11 가부시키가이샤 무라타 세이사쿠쇼 전력 증폭 회로
JP2021090168A (ja) * 2019-12-05 2021-06-10 株式会社村田製作所 電力増幅回路
CN111313671B (zh) * 2020-02-18 2021-07-20 广州慧智微电子有限公司 一种集成防过压电路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888923B2 (ja) * 1989-05-31 1999-05-10 株式会社東芝 線形化差動増幅器
JP2003347867A (ja) * 2002-05-23 2003-12-05 Nec Corp Ｆｅｔのバイアス設定回路

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59228475A (ja) 1983-06-09 1984-12-21 Matsushita Electric Ind Co Ltd 映像出力増幅器
US5079515A (en) * 1989-05-31 1992-01-07 Kabushiki Kaisha Toshiba Linearized differential amplifier
JPH03240306A (ja) 1990-02-19 1991-10-25 Hitachi Ltd カスコードアンプ
JP3711193B2 (ja) * 1998-01-16 2005-10-26 三菱電機株式会社 送受信切り換え回路
JP3474825B2 (ja) * 2000-03-13 2003-12-08 富士通カンタムデバイス株式会社 高周波電力増幅器および通信装置
JP4262545B2 (ja) * 2003-07-09 2009-05-13 三菱電機株式会社 カスコード接続回路及びその集積回路
JP2006197227A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 可変利得増幅回路、受信機及び送信機
JP2007074121A (ja) * 2005-09-05 2007-03-22 Fujitsu Ltd 増幅器及び相互コンダクタンス制御方法
JP2010068261A (ja) 2008-09-11 2010-03-25 Mitsubishi Electric Corp カスコード回路
US8385854B2 (en) 2009-05-21 2013-02-26 Qualcomm Incorporated Adaptive parametric power amplifier protection circuit
CN101924520B (zh) * 2009-06-17 2012-11-14 中兴通讯股份有限公司 一种基站功率放大器及提高基站功率放大器效率的方法
US8150343B2 (en) * 2009-09-21 2012-04-03 Broadcom Corporation Dynamic stability, gain, efficiency and impedance control in a linear/non-linear CMOS power amplifier
US8106711B2 (en) 2009-11-12 2012-01-31 Peregrine Semiconductor Coporation Stacked pre-driver amplifier
WO2012164794A1 (ja) 2011-06-01 2012-12-06 パナソニック株式会社 スルーモード付き低雑音増幅器
US8665016B2 (en) * 2012-04-30 2014-03-04 Broadcom Corporation Supply tracking
US9667195B2 (en) * 2012-12-28 2017-05-30 Peregrine Semiconductor Corporation Amplifiers operating in envelope tracking mode or non-envelope tracking mode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2888923B2 (ja) * 1989-05-31 1999-05-10 株式会社東芝 線形化差動増幅器
JP2003347867A (ja) * 2002-05-23 2003-12-05 Nec Corp Ｆｅｔのバイアス設定回路

Also Published As

Publication number Publication date
CN104716910A (zh) 2015-06-17
US20150171794A1 (en) 2015-06-18
KR20150070011A (ko) 2015-06-24
JP2015115929A (ja) 2015-06-22
US9306500B2 (en) 2016-04-05
CN104716910B (zh) 2018-10-16
JP6410007B2 (ja) 2018-10-24

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