JP6382496B2 - 薄膜トランジスタアレイ基板及びその製造方法 - Google Patents
薄膜トランジスタアレイ基板及びその製造方法 Download PDFInfo
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- JP6382496B2 JP6382496B2 JP2013209433A JP2013209433A JP6382496B2 JP 6382496 B2 JP6382496 B2 JP 6382496B2 JP 2013209433 A JP2013209433 A JP 2013209433A JP 2013209433 A JP2013209433 A JP 2013209433A JP 6382496 B2 JP6382496 B2 JP 6382496B2
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- 239000000758 substrate Substances 0.000 title claims description 108
- 239000010409 thin film Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title claims description 54
- 239000010408 film Substances 0.000 claims description 599
- 230000001681 protective effect Effects 0.000 claims description 339
- 238000005530 etching Methods 0.000 claims description 102
- 230000005684 electric field Effects 0.000 claims description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 74
- 239000001257 hydrogen Substances 0.000 claims description 70
- 229910052739 hydrogen Inorganic materials 0.000 claims description 70
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 60
- 229910052757 nitrogen Inorganic materials 0.000 claims description 37
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 238000000635 electron micrograph Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/1343—Electrodes
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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Description
先ず、図1から図6に基づいて、本発明の一実施形態に係る薄膜トランジスタアレイ基板について説明する。図1は、本発明の一実施形態に係る薄膜トランジスタアレイ基板のレイアウト図であり、図2は、図1の薄膜トランジスタアレイ基板をII-II’線に沿って切り取った断面図であり、図3は、図1の薄膜トランジスタアレイ基板をIII-III’線に沿って切り取った断面図であり、図4は、図1の薄膜トランジスタアレイ基板をIV-IV’線に沿って切り取った断面図であり、図5は、図1の薄膜トランジスタアレイ基板をV-V’線に沿って切り取った断面図であり、そして図6は、本発明の一実施形態に係る薄膜トランジスタアレイ基板の一部を示す断面図である。
第2の保護膜180yの上に、第2の電場生成電極191が形成されている。第2の電場生成電極191は、酸化インジウムスズ(ITO)または酸化インジウム亜鉛(IZO)などの透明な導電物質から形成されてもよい。
表1を参照すると、第1の保護膜180xをなす第1の層の成膜条件と、第2の保護膜180yの第1の膜180ypをなす第2の層の成膜条件及び第2の保護膜180yの第2の膜180yqをなす第3の層の成膜条件を調節することにより、第1の保護膜180xをなす第1の層から、保護膜180zの第1の膜180ypをなす第2の層及び第2の保護膜180yの第2の膜180yqをなす第3の層に向かうに従ってエッチング速度が速くなるということが分かる。
121:ゲート線
124:ゲート電極
129:ゲートパッド部
125:共通電圧線
131:第1の電場生成電極
140:ゲート絶縁膜
151、154、159:半導体
161、163、165、169:抵抗性接触部材
171:データ線
173:ソース電極
175:ドレイン電極
179:データパッド部
180x:第1の保護膜
180y:第2の保護膜
181、182、185b、186a、186b:コンタクト孔
191:第2の電場生成電極
80:有機膜
81、82、86:接続部材
Claims (16)
- 基板と、
前記基板の上に配設され、ゲートパッド部を備えるゲート線と、
前記ゲート線の上に配設されるゲート絶縁膜と、
前記ゲート絶縁膜の上に配設されてソース電極とデータパッド部とを備えるデータ線及び前記ゲート絶縁膜の上に配設されるドレイン電極と、
前記データ線及び前記ドレイン電極の上に配設される第1の保護膜と、
前記第1の保護膜の上に配設される第1の電場生成電極と、
前記第1の電場生成電極の上に配設される第2の保護膜と、
前記第2の保護膜の上に配設される第2の電場生成電極と、
を備え、
前記第1の保護膜及び前記第2の保護膜は無機物であり、
前記第1の保護膜内のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合は、第2の保護膜内のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合よりも大きい薄膜トランジスタアレイ基板。 - 前記第1の保護膜は単一膜であり、前記第2の保護膜は、下層と前記下層の上に配設される上層とを備える請求項1に記載の薄膜トランジスタアレイ基板。
- 前記第1の保護膜のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合は、前記第2の保護膜の前記下層のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合にほぼ等しいかそれよりも小さく、前記第2の保護膜の前記下層のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合は、前記第2の保護膜の前記上層のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合よりも小さい請求項2に記載の薄膜トランジスタアレイ基板。
- 基板の上にゲートパッド部を備えるゲート線を形成するステップと、
前記ゲート線の上にゲート絶縁膜を成膜するステップと、
前記ゲート絶縁膜の上に半導体を形成するステップと、
前記半導体の上に、ソース電極とデータパッド部とを備えるデータ線と、ドレイン電極と、を形成するステップと、
前記データ線及び前記ドレイン電極の上に第1の保護膜を成膜するステップと、
前記第1の保護膜の上に第1の電場生成電極を形成するステップと、
前記第1の電場生成電極の上に第2の保護膜を成膜するステップと、
前記第2の保護膜の上に第2の電場生成電極を形成するステップと、
を含み、
前記第1の保護膜のエッチング速度は、前記第2の保護膜のエッチング速度よりも小さく、
前記ゲート絶縁膜の成膜温度は前記第1の保護膜の成膜温度より高く、前記第1の保護膜の成膜温度は前記第2の保護膜の成膜温度より高いか同一な薄膜トランジスタアレイ基板の製造方法。 - 前記第2の保護膜を成膜するステップは、
前記第1の保護膜の上に第1の膜を成膜するステップと、
前記第1の膜の上に第2の膜を成膜するステップと、
を含み、
前記第2の膜のエッチング速度は、前記第1の膜のエッチング速度よりも大きい請求項4に記載の薄膜トランジスタアレイ基板の製造方法。 - 前記第1の膜を成膜するステップにおいては、前記第1の膜を、前記第1の保護膜のエッチング速度にほぼ等しいかそれよりも大きいエッチング速度を有するように成膜する請求項5に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記ゲート絶縁膜を成膜するステップにおいては、前記ゲート絶縁膜を、前記第1の保護膜のエッチング速度よりも小さいエッチング速度を有するように成膜する請求項4に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第2の保護膜の下層及び前記下層の上に配設される前記第2の保護膜の上層をエッチングしてコンタクト孔を形成するステップをさらに含み、
前記コンタクト孔を形成するステップにおいては、前記コンタクト孔を、下方から上方に向かうに従って断面積が大きくなる正テーパ構造を有するように形成する請求項4に記載の薄膜トランジスタアレイ基板の製造方法。 - 前記第1の保護膜と前記第2の保護膜との間に有機絶縁膜を成膜するステップをさらに含み、
前記有機絶縁膜を成膜するステップにおいては、前記コンタクト孔の周りには前記有機絶縁膜を成膜しない請求項8に記載の薄膜トランジスタアレイ基板の製造方法。 - 前記第1の保護膜と前記第2の保護膜との間に有機絶縁膜を成膜するステップをさらに含み、
前記有機絶縁膜は、前記ゲートパッド部及び前記データパッド部に対応する領域には成膜しない請求項4に記載の薄膜トランジスタアレイ基板の製造方法。 - 前記ゲート絶縁膜と、前記第1の保護膜及び前記第2の保護膜に前記ゲートパッド部の一部を露出させる第1のコンタクト孔を形成するステップをさらに含む請求項10に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第1のコンタクト孔を形成するステップにおいては、前記第1のコンタクト孔を、下方から上方に向かうに従って断面積が大きくなるように形成する請求項11に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第1の保護膜及び前記第2の保護膜に前記データパッド部の一部を露出させる第2のコンタクト孔を形成するステップをさらに含む請求項10に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第2のコンタクト孔を形成するステップにおいては、前記第2のコンタクト孔を、下方から上方に向かうに従って断面積が大きくなるように形成する請求項13に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第1の保護膜内のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合を、第2の保護膜内のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合よりも大きくする請求項4に記載の薄膜トランジスタアレイ基板の製造方法。
- 前記第2の保護膜を成膜するステップは、
前記第1の保護膜の上に第1の膜を成膜するステップと、
前記第1の膜の上に第2の膜を成膜するステップと、
を含み、
前記第1の保護膜のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合を、前記第2の保護膜の前記第1の膜のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合にほぼ等しいかそれよりも小さくし、
前記第2の保護膜の前記第1の膜のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合を、前記第2の保護膜の前記第2の膜のケイ素と水素との結合濃度に対する窒素と水素との結合濃度の割合よりも小さくする請求項15に記載の薄膜トランジスタアレイ基板の製造方法。
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