JP6381639B2 - 窒化ガリウムデバイスにおける分離構造及び集積回路 - Google Patents
窒化ガリウムデバイスにおける分離構造及び集積回路 Download PDFInfo
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- 238000002955 isolation Methods 0.000 title claims description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 40
- 229910002601 GaN Inorganic materials 0.000 title claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 40
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 description 15
- 238000000926 separation method Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
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Description
Claims (14)
- 基板層の上に配置された緩衝層と、
前記緩衝層の上に配置された窒化ガリウム層と、
前記窒化ガリウム層の上に配置されたバリア層と、
前記バリア層の露出面の第1の部分に形成された、第1のトランジスタデバイスのための複数の第1のデバイスコンタクトと、
前記バリア層の露出面の第2の部分に形成された、第2のトランジスタデバイスのための複数の第2のデバイスコンタクトと、
前記バリア層の前記面の第3の部分に形成された少なくとも1つのゲート構造と、
を含む集積半導体デバイスであって、
前記ゲート構造は、前記複数の第1のデバイスコンタクトと前記複数の第2のデバイスコンタクトとの間に配置されて、前記第1のトランジスタデバイスを前記第2のトランジスタデバイスから電気的に分離する当該集積半導体デバイスの分離領域を形成し、
前記複数の第1のデバイスコンタクトは、前記第1のトランジスタデバイスのためのソースコンタクト、ゲートコンタクト及びドレインコンタクトを含み、前記複数の第2のデバイスコンタクトは、前記第2のトランジスタデバイスのためのソースコンタクト、ゲートコンタクト及びドレインコンタクトを含み、
前記ゲート構造は前記第1のトランジスタデバイス及び前記第2のトランジスタデバイスのうちの1つのソースコンタクトに電気的に連結されている、集積半導体デバイス。 - 前記ゲート構造は、前記第1のトランジスタデバイスのソースコンタクトと前記第2のトランジスタデバイスのソースコンタクトとの間に配置されている、請求項1に記載の集積半導体デバイス。
- 前記ゲート構造並びに前記第1のトランジスタデバイスのゲートコンタクト及び前記第2のトランジスタデバイスのゲートコンタクトは共通の積層膜を含む、請求項1に記載の集積半導体デバイス。
- 前記ゲート構造並びに前記第1のトランジスタデバイスのゲートコンタクト及び前記第2のトランジスタデバイスのゲートコンタクトは共通の工程順序で製作される、請求項1に記載の集積半導体デバイス。
- 前記ゲート構造は、前記集積半導体デバイスの最も負の電圧でバイアスされている、請求項1に記載の集積半導体デバイス。
- 基板層の上に配置された緩衝層と、
前記緩衝層の上に配置された窒化ガリウム層と、
前記窒化ガリウム層の上に配置されたバリア層と、
前記バリア層の露出面の第1の部分に形成された、第1のトランジスタデバイスのための複数の第1のデバイスコンタクトと、
前記バリア層の露出面の第2の部分に形成された、第2のトランジスタデバイスのための複数の第2のデバイスコンタクトと、
前記バリア層の前記面の第3の部分に形成された一対のゲート構造と、
を含む集積半導体デバイスであって、
前記一対のゲート構造は、前記複数の第1のデバイスコンタクトと前記複数の第2のデバイスコンタクトとの間に配置されて、前記第1のトランジスタデバイスを前記第2のトランジスタデバイスから電気的に分離する当該集積半導体デバイスの分離領域を形成し、
前記複数の第1のデバイスコンタクトは、前記第1のトランジスタデバイスのためのソースコンタクト、ゲートコンタクト及びドレインコンタクトを含み、前記複数の第2のデバイスコンタクトは、前記第2のトランジスタデバイスのためのソースコンタクト、ゲートコンタクト及びドレインコンタクトを含み、
前記ゲート構造は前記第1のトランジスタデバイス及び前記第2のトランジスタデバイスのうちの1つのソースコンタクトに電気的に連結されている、集積半導体デバイス。 - 前記一対のゲート構造は、前記第1のトランジスタデバイスのソースコンタクトと前記第2のトランジスタデバイスのソースコンタクトとの間に配置されている、請求項6に記載の集積半導体デバイス。
- 前記一対のゲート構造並びに前記第1のトランジスタデバイスのゲートコンタクト及び前記第2のトランジスタデバイスのゲートコンタクトは共通の積層膜を含む、請求項6に記載の集積半導体デバイス。
- 前記一対のゲート構造並びに前記第1のトランジスタデバイスのゲートコンタクト及び前記第2のトランジスタデバイスのゲートコンタクトは共通の工程順序で製作される、請求項6に記載の集積半導体デバイス。
- 前記バリア層の前記面の第3の部分の前記一対のゲート構造の間に形成されたオーミックコンタクトをさらに含み、前記一対のゲート構造と該オーミックコンタクトとが前記分離領域を形成する、請求項6に記載の集積半導体デバイス。
- 前記一対のゲート構造はエンハンスメントモード構造であり、前記一対のゲート構造及び前記オーミックコンタクトは外部バイアス電圧に電気的に接続されていない、請求項10に記載の集積半導体デバイス。
- 前記一対のゲート構造はエンハンスメントモード構造であり、前記一対のゲート構造及び前記オーミックコンタクトは互いに短絡され、前記集積半導体デバイスの最も低い電圧基準に接続されている、請求項10に記載の集積半導体デバイス。
- 前記一対のゲート構造は、前記第1のトランジスタデバイスのソースコンタクト及び前記第2のトランジスタデバイスのソースコンタクトにそれぞれ隣接して配置され、分離開口が前記一対のゲート構造の間に形成されている、請求項6に記載の集積半導体デバイス。
- 前記分離領域は、前記バリア層の前記面の第3の部分及び前記バリア層の前記第3の部分の下の前記窒化ガリウム層の一部内で定義されている、請求項13に記載の集積半導体デバイス。
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US201361843810P | 2013-07-08 | 2013-07-08 | |
US61/843,810 | 2013-07-08 | ||
PCT/US2014/045251 WO2015006133A1 (en) | 2013-07-08 | 2014-07-02 | Isolation structure in gallium nitride devices and integrated circuits |
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JP2016527716A JP2016527716A (ja) | 2016-09-08 |
JP6381639B2 true JP6381639B2 (ja) | 2018-08-29 |
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US (1) | US9171911B2 (ja) |
JP (1) | JP6381639B2 (ja) |
KR (1) | KR102204777B1 (ja) |
CN (1) | CN105359275B (ja) |
DE (1) | DE112014003169B4 (ja) |
TW (1) | TWI543368B (ja) |
WO (1) | WO2015006133A1 (ja) |
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TWI615977B (zh) * | 2013-07-30 | 2018-02-21 | 高效電源轉換公司 | 具有匹配臨界電壓之積體電路及其製造方法 |
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2014
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DE112014003169T8 (de) | 2016-07-28 |
WO2015006133A1 (en) | 2015-01-15 |
CN105359275A (zh) | 2016-02-24 |
US9171911B2 (en) | 2015-10-27 |
CN105359275B (zh) | 2019-06-14 |
KR20160030073A (ko) | 2016-03-16 |
DE112014003169T5 (de) | 2016-03-24 |
JP2016527716A (ja) | 2016-09-08 |
KR102204777B1 (ko) | 2021-01-20 |
TW201511263A (zh) | 2015-03-16 |
US20150008442A1 (en) | 2015-01-08 |
TWI543368B (zh) | 2016-07-21 |
DE112014003169B4 (de) | 2021-01-21 |
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